FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
STP9NK60Z MOSFET N-CH 600V 7A TO220AB STMicroelectronics	21	RFQ	Datasheet	SuperMESH™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	950mOhm @ 3.5A, 10V	4.5V @ 100µA	53 nC @ 10 V	±30V	1110 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
STF26N60M2 MOSFET N-CH 600V 20A TO220FP STMicroelectronics	2,272	RFQ	Datasheet	MDmesh™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	165mOhm @ 11A, 10V	4V @ 250µA	-	±25V	-	-	30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP
TK72A12N1,S4X MOSFET N-CH 120V 72A TO220SIS Toshiba Semiconductor and Storage	5,341	RFQ	Datasheet	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120 V	72A (Tc)	10V	4.5mOhm @ 36A, 10V	4V @ 1mA	130 nC @ 10 V	±20V	8100 pF @ 60 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
IQE050N08NM5CGSCATMA1 OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies	9,891	RFQ	Datasheet	OptiMOS™ 5	9-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	16A (Ta), 99A (Tc)	6V, 10V	5mOhm @ 20A, 10V	3.8V @ 49µA	44 nC @ 10 V	±20V	2900 pF @ 40 V	-	2.5W (Ta), 100W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-WHTFN-9-1
IPW95R310PFD7XKSA1 MOSFET N-CH 950V 17.5A TO247-3 Infineon Technologies	7,433	RFQ	Datasheet	CoolMOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	950 V	17.5A (Tc)	10V	310mOhm @ 10.4A, 10V	3.5V @ 520µA	61 nC @ 10 V	±20V	1765 pF @ 400 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-41
IXTP1R6N50D2 MOSFET N-CH 500V 1.6A TO220AB Littelfuse Inc.	5	RFQ	Datasheet	Depletion	TO-220-3	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	500 V	1.6A (Tc)	-	2.3Ohm @ 800mA, 0V	-	23.7 nC @ 5 V	±20V	645 pF @ 25 V	-	100W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IXTP1R6N100D2 MOSFET N-CH 1000V 1.6A TO220AB Littelfuse Inc.	4	RFQ	Datasheet	Depletion	TO-220-3	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	1000 V	1.6A (Tc)	10V	10Ohm @ 800mA, 0V	-	27 nC @ 5 V	±20V	645 pF @ 25 V	-	100W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IXTY1R6N50D2 MOSFET N-CH 500V 1.6A TO252 Littelfuse Inc.	5,491	RFQ	Datasheet	Depletion	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	500 V	1.6A (Tc)	-	2.3Ohm @ 800mA, 0V	-	23.7 nC @ 5 V	±20V	645 pF @ 25 V	-	100W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
IRFS11N50APBF MOSFET N-CH 500V 11A D2PAK Vishay Siliconix	3,156	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	11A (Tc)	10V	520mOhm @ 6.6A, 10V	4V @ 250µA	52 nC @ 10 V	±30V	1423 pF @ 25 V	-	170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IPDD60R150G7XTMA1 MOSFET N-CH 600V 16A HDSOP-10 Infineon Technologies	5,307	RFQ	Datasheet	CoolMOS™ G7	10-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	16A (Tc)	10V	150mOhm @ 5.3A, 10V	4V @ 260µA	23 nC @ 10 V	±20V	902 pF @ 400 V	-	95W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-10-1
TJ200F04M3L,LXHQ MOSFET P-CH 40V 200A TO220SM Toshiba Semiconductor and Storage	7,070	RFQ	Datasheet	U-MOSVI	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	40 V	200A (Ta)	6V, 10V	1.8mOhm @ 100A, 10V	3V @ 1mA	460 nC @ 10 V	+10V, -20V	1280 pF @ 10 V	-	375W (Tc)	175°C	-	-	Surface Mount	TO-220SM(W)
SUP60030E-GE3 MOSFET N-CH 80V 120A TO220AB Vishay Siliconix	9,429	RFQ	Datasheet	TrenchFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	7.5V, 10V	3.4mOhm @ 30A, 10V	4V @ 250µA	141 nC @ 10 V	±20V	7910 pF @ 40 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IPW60R190P6FKSA1 MOSFET N-CH 600V 20.2A TO247-3 Infineon Technologies	10	RFQ	Datasheet	CoolMOS™ P6	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20.2A (Tc)	10V	190mOhm @ 7.6A, 10V	4.5V @ 630µ	11 nC @ 10 V	±20V	1750 pF @ 100 V	-	151W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3
IXTY08N100D2 MOSFET N-CH 1000V 800MA TO252 Littelfuse Inc.	7,934	RFQ	Datasheet	Depletion	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	1000 V	800mA (Tc)	-	21Ohm @ 400mA, 0V	-	14.6 nC @ 5 V	±20V	325 pF @ 25 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
IPA60R199CPXKSA1 MOSFET N-CH 650V 16A TO220-FP Infineon Technologies	9,386	RFQ	Datasheet	CoolMOS™	TO-220-3 Full Pack	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	16A (Tc)	10V	199mOhm @ 9.9A, 10V	3.5V @ 1.1mA	43 nC @ 10 V	±20V	1520 pF @ 100 V	-	34W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-31
TK20E60W5,S1VX X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	17	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Ta)	10V	175mOhm @ 10A, 10V	4.5V @ 1mA	55 nC @ 10 V	±30V	1800 pF @ 300 V	-	165W (Tc)	150°C	-	-	Through Hole	TO-220
IXTY1R6N50D2-TRL MOSFET N-CH 500V 1.6A TO252AA Littelfuse Inc.	5,128	RFQ	Datasheet	Depletion	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	500 V	1.6A (Tj)	0V	2.3Ohm @ 800mA, 0V	4.5V @ 250µA	23.7 nC @ 5 V	±20V	645 pF @ 25 V	-	100W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
IXTP3N100D2 MOSFET N-CH 1000V 3A TO220AB Littelfuse Inc.	3,480	RFQ	Datasheet	Depletion	TO-220-3	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	1000 V	3A (Tc)	-	5.5Ohm @ 1.5A, 0V	-	37.5 nC @ 5 V	±20V	1020 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
AOT66916L MOSFET N-CH 100V 35.5/120A TO220 Alpha & Omega Semiconductor Inc.	8,017	RFQ	Datasheet	AlphaSGT™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	35.5A (Ta), 120A (Tc)	6V, 10V	3.6mOhm @ 20A, 10V	3.5V @ 250µA	78 nC @ 10 V	±20V	6180 pF @ 50 V	-	8.3W (Ta), 277W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
TK100A10N1,S4X MOSFET N-CH 100V 100A TO220SIS Toshiba Semiconductor and Storage	17	RFQ	Datasheet	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	10V	3.8mOhm @ 50A, 10V	4V @ 1mA	140 nC @ 10 V	±20V	8800 pF @ 50 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS

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FETs, MOSFETs Electronic Components

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