FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK11A65W,S5X MOSFET N-CH 650V 11.1A TO220SIS Toshiba Semiconductor and Storage	6	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	11.1A (Ta)	10V	390mOhm @ 5.5A, 10V	3.5V @ 450µA	25 nC @ 10 V	±30V	890 pF @ 300 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK32E12N1,S1X MOSFET N CH 120V 60A TO-220 Toshiba Semiconductor and Storage	5,659	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120 V	60A (Tc)	10V	13.8mOhm @ 16A, 10V	4V @ 500µA	34 nC @ 10 V	±20V	2000 pF @ 60 V	-	98W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
STF6N60M2 MOSFET N-CH 600V 4.5A TO220FP STMicroelectronics	5	RFQ	Datasheet	MDmesh™ II Plus	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	4.5A (Ta)	10V	1.2Ohm @ 2.25A, 10V	4V @ 250µA	8 nC @ 10 V	±25V	232 pF @ 100 V	-	20W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP
SI7106DN-T1-GE3 MOSFET N-CH 20V 12.5A PPAK1212-8 Vishay Siliconix	6,321	RFQ	Datasheet	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	12.5A (Ta)	2.5V, 4.5V	6.2mOhm @ 19.5A, 4.5V	1.5V @ 250µA	27 nC @ 4.5 V	±12V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8
IPP60R360P7XKSA1 MOSFET N-CH 650V 9A TO220-3 Infineon Technologies	4,627	RFQ	Datasheet	CoolMOS™ P7	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	9A (Tc)	10V	360mOhm @ 2.7A, 10V	4V @ 140µA	13 nC @ 10 V	±20V	555 pF @ 400 V	-	41W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3
TK5R3E08QM,S1X UMOS10 TO-220AB 80V 5.3MOHM Toshiba Semiconductor and Storage	6	RFQ	Datasheet	U-MOSX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	6V, 10V	5.3mOhm @ 50A, 10V	3.5V @ 700µA	55 nC @ 10 V	±20V	3980 pF @ 40 V	-	150W (Tc)	175°C	-	-	Through Hole	TO-220
STF19NF20 MOSFET N-CH 200V 15A TO220FP STMicroelectronics	2,171	RFQ	Datasheet	MESH OVERLAY™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	15A (Tc)	10V	160mOhm @ 7.5A, 10V	4V @ 250µA	24 nC @ 10 V	±20V	800 pF @ 25 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP
SIHD6N65E-GE3 MOSFET N-CH 650V 7A DPAK Vishay Siliconix	2,977	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	600mOhm @ 3A, 10V	4V @ 250µA	48 nC @ 10 V	±30V	820 pF @ 100 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
TK3R3A06PL,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	6,374	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	80A (Tc)	4.5V, 10V	3.3mOhm @ 40A, 10V	2.5V @ 700µA	71 nC @ 10 V	±20V	5000 pF @ 30 V	-	42W (Tc)	175°C	-	-	Through Hole	TO-220SIS
AOT11S60L MOSFET N-CH 600V 11A TO220 Alpha & Omega Semiconductor Inc.	4,937	RFQ	Datasheet	aMOS™	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	399mOhm @ 3.8A, 10V	4.1V @ 250µA	11 nC @ 10 V	±30V	545 pF @ 100 V	-	178W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
TK6A65D(STA4,Q,M) MOSFET N-CH 650V 6A TO220SIS Toshiba Semiconductor and Storage	20	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	6A (Ta)	10V	1.11Ohm @ 3A, 10V	4V @ 1mA	20 nC @ 10 V	±30V	1050 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK290A65Y,S4X MOSFET N-CH 650V 11.5A TO220SIS Toshiba Semiconductor and Storage	3,566	RFQ	Datasheet	DTMOSV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	11.5A (Tc)	10V	290mOhm @ 5.8A, 10V	4V @ 450µA	25 nC @ 10 V	±30V	730 pF @ 300 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
IRLIZ14GPBF MOSFET N-CH 60V 8A TO220-3 Vishay Siliconix	9,017	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	8A (Tc)	4V, 5V	200mOhm @ 4.8A, 5V	2V @ 250µA	8.4 nC @ 5 V	±10V	400 pF @ 25 V	-	27W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
BUK7S2R0-40HJ BUK7S2R0-40H/SOT1235/LFPAK88 Nexperia USA Inc.	8,387	RFQ	Datasheet	-	SOT-1235	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	190A (Tc)	10V	2mOhm @ 25A, 10V	3.6V @ 1mA	70 nC @ 10 V	+20V, -10V	5075 pF @ 25 V	-	183W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK88 (SOT1235)
TK9A90E,S4X MOSFET N-CH 900V 9A TO220SIS Toshiba Semiconductor and Storage	24	RFQ	Datasheet	π-MOSVIII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	9A (Ta)	10V	1.3Ohm @ 4.5A, 10V	4V @ 900µA	46 nC @ 10 V	±30V	2000 pF @ 25 V	-	50W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
IRFS7540TRLPBF MOSFET N-CH 60V 110A D2PAK Infineon Technologies	4,886	RFQ	Datasheet	HEXFET®, StrongIRFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	110A (Tc)	6V, 10V	5.1mOhm @ 65A, 10V	3.7V @ 100µA	130 nC @ 10 V	±20V	4555 pF @ 25 V	-	160W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3
TK3R9E10PL,S1X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	5,271	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	4.5V, 10V	3.9mOhm @ 50A, 10V	2.5V @ 1mA	96 nC @ 10 V	±20V	6320 pF @ 50 V	-	230W (Tc)	175°C	-	-	Through Hole	TO-220
TK10A80E,S4X MOSFET N-CH 800V 10A TO220SIS Toshiba Semiconductor and Storage	9,697	RFQ	Datasheet	π-MOSVIII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	10A (Ta)	10V	1Ohm @ 5A, 10V	4V @ 1mA	46 nC @ 10 V	±30V	2000 pF @ 25 V	-	50W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK7J90E,S1E MOSFET N-CH 900V 7A TO3P Toshiba Semiconductor and Storage	22	RFQ	Datasheet	π-MOSVIII	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	7A (Ta)	10V	2Ohm @ 3.5A, 10V	4V @ 700µA	32 nC @ 10 V	±30V	1350 pF @ 25 V	-	200W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3P(N)
TK100A06N1,S4X MOSFET N-CH 60V 100A TO220SIS Toshiba Semiconductor and Storage	6,673	RFQ	Datasheet	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	100A (Tc)	10V	2.7mOhm @ 50A, 10V	4V @ 1mA	140 nC @ 10 V	±20V	10500 pF @ 30 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS

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FETs, MOSFETs Electronic Components

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