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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FDPF5N50NZU Fairchild Semiconductor electronic component

FDPF5N50NZU

MOSFET N-CH 500V 3.9A TO220F

Fairchild Semiconductor

673
RFQ

Datasheet

UniFET-II™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 3.9A (Tc) 10V 2Ohm @ 1.95A, 10V 5V @ 250µA 12 nC @ 10 V ±25V 485 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
AM4462N Analog Power Inc. electronic component

AM4462N

MOSFET N-CH 60V 9.7A SO-8

Analog Power Inc.

650
RFQ

Datasheet

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GT040N10T Goford Semiconductor electronic component

GT040N10T

MOSFET N-CH 100V 140A 200W 4.5m

Goford Semiconductor

1,000
RFQ

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 40A, 10V 2.5V @ 250µA 100 nC @ 10 V ±20V 5920 pF @ 50 V - 200W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT045N10M Goford Semiconductor electronic component

GT045N10M

MOSFET N-CH 100V 120A TO-263

Goford Semiconductor

800
RFQ

Datasheet

SGT TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 120A (Tc) 10V 4.5mOhm @ 30A, 10V 4V @ 250µA - ±20V - - 180W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
AM90N06-10PCFM Analog Power Inc. electronic component

AM90N06-10PCFM

MOSFET N-CH 60V 64A TO-220CFM

Analog Power Inc.

800
RFQ

-

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 64A (Tc) 5.5V, 10V 9.9mOhm @ 45A, 10V 1V @ 250µA 79 nC @ 5.5 V ±20V 10331 pF @ 15 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220CFM
2SK2624LS-CD11 Sanyo electronic component

2SK2624LS-CD11

2SK2624LS - N-CHANNEL SILICON MO

Sanyo

500
RFQ

Datasheet

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FQPF7N65CYDTU Fairchild Semiconductor electronic component

FQPF7N65CYDTU

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor

800
RFQ

Datasheet

QFET® TO-220-3 Full Pack, Formed Leads Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 1.4Ohm @ 3.5A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1245 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3 (Y-Forming)
GC11N65M Goford Semiconductor electronic component

GC11N65M

MOSFET N-CH 650V 11A TO-263

Goford Semiconductor

800
RFQ

Datasheet

Cool MOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA - ±30V - - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
CSD18503KCS National Semiconductor electronic component

CSD18503KCS

CSD18503KCS 40V, N CHANNEL NEXFE

National Semiconductor

450
RFQ

Datasheet

NexFET™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 4.5mOhm @ 75A, 10V 2.3V @ 250µA 36 nC @ 10 V ±20V 3150 pF @ 20 V - 188W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
AM20P06-135D Analog Power Inc. electronic component

AM20P06-135D

MOSFET P-CH -60V 15.8A TO-252

Analog Power Inc.

1,000
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 60 V 16A (Ta) 4.5V, 10V 130mOhm @ 16A, 10V 1V @ 250µA 18 nC @ 4.5 V ±20V - - 50W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-252
FQPF9P25YDTU Fairchild Semiconductor electronic component

FQPF9P25YDTU

MOSFET P-CH 250V 6A TO220F-3

Fairchild Semiconductor

705
RFQ

Datasheet

QFET® TO-220-3 Full Pack, Formed Leads Bulk Active P-Channel MOSFET (Metal Oxide) 250 V 6A (Tc) 10V 620mOhm @ 3A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1180 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3 (Y-Forming)
FDPF10N50FT Fairchild Semiconductor electronic component

FDPF10N50FT

POWER FIELD-EFFECT TRANSISTOR, 9

Fairchild Semiconductor

1,000
RFQ

Datasheet

UniFET™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 850mOhm @ 4.5A, 10V 5V @ 250µA 24 nC @ 10 V ±30V 1170 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
AMRA10N Analog Power Inc. electronic component

AMRA10N

MOSFET N-CH 100V 62.7A DFN5X6

Analog Power Inc.

500
RFQ

-

- 8-PowerVDFN Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 12.4A (Ta), 62.7A (Tc) 6.5V, 10V 11mOhm @ 12A, 10V 1V @ 250µA 21 nC @ 6.5 V ±20V 1248 pF @ 50 V - 2.5W (Ta), 64.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
IRF122 International Rectifier electronic component

IRF122

8.0A, 100V, 0.36 OHM, N-CHANNEL,

International Rectifier

731
RFQ

Datasheet

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IRF6775MTRPBF International Rectifier electronic component

IRF6775MTRPBF

IRF6775 - 12V-300V N-CHANNEL POW

International Rectifier

597
RFQ

Datasheet

HEXFET® DirectFET™ Isometric MZ Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 4.9A (Ta), 28A (Tc) 10V 56mOhm @ 5.6A, 10V 5V @ 100µA 36 nC @ 10 V ±20V 1411 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MZ
BUK752R3-40E,127 NXP Semiconductors electronic component

BUK752R3-40E,127

NEXPERIA BUK752R3-40E - 120A, 40

NXP Semiconductors

995
RFQ

Datasheet

TrenchMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Ta) - 2.3mOhm @ 25A, 10V 4V @ 1mA 109.2 nC @ 10 V ±20V 8500 pF @ 25 V - 293W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220AB
IRF1010ZPBF International Rectifier electronic component

IRF1010ZPBF

IRF1010 - 12V-300V N-CHANNEL POW

International Rectifier

350
RFQ

Datasheet

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK7606-55A,118 NXP USA Inc. electronic component

BUK7606-55A,118

MOSFET N-CH 55V 75A D2PAK

NXP USA Inc.

800
RFQ

Datasheet

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.3mOhm @ 25A, 10V 4V @ 1mA - ±20V 6000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
AM30P20-500P Analog Power Inc. electronic component

AM30P20-500P

MOSFET P-CH -200V 30A TO-220

Analog Power Inc.

800
RFQ

Datasheet

- TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 200 V 30A (Tc) 5.5V, 10V 500mOhm @ 28A, 10V 1V @ 250µA 28 nC @ 5.5 V ±20V 1852 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
RF1S530SM9A Harris Corporation electronic component

RF1S530SM9A

14A, 100V, 0.16OHM, N-CHANNEL PO

Harris Corporation

800
RFQ

Datasheet

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FETs, MOSFETs Electronic Components

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