FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
ASZM040120T N-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED	30	RFQ	Datasheet	-	TO-247-4	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	68A (Tc)	18V, 20V	32mOhm @ 40A, 20V	3.6V @ 9.5mA	87 nC @ 18 V	+25V, -10V	2820 pF @ 1000 V	-	340W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
TPH3208LDG GANFET N-CH 650V 20A 3PQFN Transphorm	9	RFQ	Datasheet	-	3-PowerDFN	Tube	Obsolete	N-Channel	GaNFET (Gallium Nitride)	650 V	20A (Tc)	10V	130mOhm @ 13A, 8V	2.6V @ 300µA	14 nC @ 8 V	±18V	760 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PQFN (8x8)
R6030JNZC8 MOSFET N-CH 600V 30A TO3PF Rohm Semiconductor	29	RFQ	-	-	TO-3P-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Tc)	15V	143mOhm @ 15A, 15V	7V @ 5.5mA	74 nC @ 15 V	±30V	2500 pF @ 100 V	-	93W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3PF
STWA57N65M5 MOSFET N-CH 650V 42A TO247 STMicroelectronics	90	RFQ	Datasheet	MDmesh™ V	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	42A (Tc)	10V	63mOhm @ 21A, 10V	5V @ 250µA	98 nC @ 10 V	±25V	4200 pF @ 100 V	-	250W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
GC041N65QF MOSFET N-CH 650V 70A TO-247 Goford Semiconductor	26	RFQ	Datasheet	SuperJunction	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	70A (Tc)	10V	43mOhm @ 20A, 10V	5V @ 250µA	160 nC @ 10 V	±30V	7668 pF @ 400 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
AS1M080120P N-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED	78	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	20V	98mOhm @ 20A, 20V	4V @ 5mA	79 nC @ 20 V	+25V, -10V	1475 pF @ 1000 V	-	192W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
APT43M60L MOSFET N-CH 600V 45A TO264 Microchip Technology	20	RFQ	Datasheet	POWER MOS 8™	TO-264-3, TO-264AA	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	600 V	45A (Tc)	10V	150mOhm @ 21A, 10V	5V @ 2.5mA	215 nC @ 10 V	±30V	8590 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]
STW62NM60N MOSFET N-CH 600V 65A TO247 STMicroelectronics	10	RFQ	Datasheet	MDmesh™ II	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	65A (Tc)	10V	49mOhm @ 32.5A, 10V	4V @ 250µA	174 nC @ 10 V	±25V	5800 pF @ 100 V	-	450W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247-3
STW57N65M5-4 MOSFET N-CH 650V 42A TO247-4L STMicroelectronics	33	RFQ	Datasheet	MDmesh™ V	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	42A (Tc)	10V	63mOhm @ 21A, 10V	5V @ 250µA	98 nC @ 10 V	±25V	4200 pF @ 100 V	-	250W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247-4L
APT34F60B MOSFET N-CH 600V 36A TO247 Microchip Technology	9	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	36A (Tc)	10V	210mOhm @ 17A, 10V	5V @ 1mA	165 nC @ 10 V	±30V	6640 pF @ 25 V	-	624W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
FCHD040N65S3-F155 MOSFET N-CH 650V 65A TO247 onsemi	34	RFQ	Datasheet	SuperFET® III	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	65A (Tc)	10V	40mOhm @ 32.5A, 10V	4.5V @ 1.7mA	136 nC @ 10 V	±30V	4740 pF @ 400 V	-	417W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
STWA63N65DM2 MOSFET N-CH 650V 60A TO247 STMicroelectronics	37	RFQ	Datasheet	MDmesh™ DM2	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	60A (Tc)	10V	50mOhm @ 30A, 10V	5V @ 250µA	120 nC @ 10 V	±25V	5500 pF @ 100 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 Long Leads
APT34F60S MOSFET N-CH 600V 36A D3PAK Microchip Technology	86	RFQ	Datasheet	POWER MOS 8™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	36A (Tc)	10V	190mOhm @ 17A, 10V	5V @ 1mA	165 nC @ 10 V	±30V	6640 pF @ 25 V	-	624W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D3PAK
H5N5016PL-E N-CHANNEL POWER MOSFET Renesas Electronics Corporation	42	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GPI65030DFN GANFET N-CH 650V 30A DFN8X8 GaNPower	100	RFQ	Datasheet	-	Die	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	30A	6V	-	1.2V @ 3.5mA	5.8 nC @ 6 V	+7.5V, -12V	241 pF @ 400 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Die
GPI65030TO5L GaNFET N-CH 650V 30A TO263-5L GaNPower	26	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	30A	6V	-	1.4V @ 3.5mA	5.8 nC @ 6 V	+7.5V, -12V	241 pF @ 400 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-
APT75M50L MOSFET N-CH 500V 75A TO264 Microchip Technology	9	RFQ	Datasheet	POWER MOS 8™	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	75A (Tc)	10V	75mOhm @ 37A, 10V	5V @ 2.5mA	290 nC @ 10 V	±30V	11600 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]
IV1Q12160T4 SIC MOSFET, 1200V 160MOHM, TO-24 Inventchip	96	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	20A (Tc)	20V	195mOhm @ 10A, 20V	2.9V @ 1.9mA	43 nC @ 20 V	+20V, -5V	885 pF @ 800 V	-	138W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
IXFH12N100Q MOSFET N-CH 1000V 12A TO247AD IXYS	54	RFQ	Datasheet	HiPerFET™, Q Class	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	12A (Tc)	10V	1.05Ohm @ 6A, 10V	5.5V @ 4mA	90 nC @ 10 V	±20V	2900 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
APT6017LFLLG MOSFET N-CH 600V 35A TO264 Microsemi Corporation	15	RFQ	Datasheet	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	35A (Tc)	10V	170mOhm @ 17.5A, 10V	5V @ 2.5mA	100 nC @ 10 V	±30V	4500 pF @ 25 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]

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FETs, MOSFETs Electronic Components

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