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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SFT1445-TL-H onsemi electronic component

SFT1445-TL-H

MOSFET N-CH 100V 17A TP-FA

onsemi

48
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Ta) 4V, 10V 111mOhm @ 8.5A, 10V 2.6V @ 1mA 19 nC @ 10 V ±20V 1030 pF @ 20 V - 1W (Ta), 35W (Tc) 150°C (TJ) - - Surface Mount TP-FA
NTMFS6H848NT1G onsemi electronic component

NTMFS6H848NT1G

MOSFET N-CH 80V 13A/57A 5DFN

onsemi

92
RFQ

Datasheet

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 13A (Ta), 57A (Tc) 6V, 10V 9.4mOhm @ 10A, 10V 4V @ 70µA 16 nC @ 10 V ±20V 1180 pF @ 40 V - 3.7W (Ta), 73W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
STF2LN60K3 STMicroelectronics electronic component

STF2LN60K3

MOSFET N CH 600V 2A TO-220FP

STMicroelectronics

895
RFQ

Datasheet

SuperMESH3™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.5Ohm @ 1A, 10V 4.5V @ 50µA 12 nC @ 10 V ±30V 235 pF @ 50 V - 20W (Tc) 150°C (TJ) - - Through Hole TO-220FP
G075N06M Goford Semiconductor electronic component

G075N06M

MOSFET N-CH 60V 110A 160W TO-263

Goford Semiconductor

800
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 10V 7mOhm @ 20A, 10V 3V @ 250µA 90 nC @ 10 V ±20V 6443 pF @ 30 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
STU6N65M2 STMicroelectronics electronic component

STU6N65M2

MOSFET N-CH 650V 4A IPAK

STMicroelectronics

523
RFQ

Datasheet

MDmesh™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 1.35Ohm @ 2A, 10V 4V @ 250µA 9.8 nC @ 10 V ±25V 226 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
TSM018NA03CR RLG Taiwan Semiconductor Corporation electronic component

TSM018NA03CR RLG

MOSFET N-CH 30V 185A 8PDFN

Taiwan Semiconductor Corporation

69
RFQ

-

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 185A (Tc) 4.5V, 10V 1.8mOhm @ 29A, 10V 2.5V @ 250µA 56 nC @ 10 V ±20V 3479 pF @ 15 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
DMG9N65CT Diodes Incorporated electronic component

DMG9N65CT

MOSFET N-CH 650V 9A TO220AB

Diodes Incorporated

27
RFQ

Datasheet

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 1.3Ohm @ 4.5A, 10V 5V @ 250µA 39 nC @ 10 V ±30V 2310 pF @ 25 V - 165W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
BUK9614-60E,118 Nexperia USA Inc. electronic component

BUK9614-60E,118

MOSFET N-CH 60V 56A D2PAK

Nexperia USA Inc.

59
RFQ

Datasheet

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 5V 12.8mOhm @ 15A, 10V 2.1V @ 1mA 20.5 nC @ 5 V ±10V 2651 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
GT013N04TI Goford Semiconductor electronic component

GT013N04TI

MOSFET N-CH 40V 220A TO-220

Goford Semiconductor

50
RFQ

Datasheet

SGT TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 220A (Tc) 10V 2.5mOhm @ 30A, 10V 5V @ 250µA 50 nC @ 10 V ±20V 3986 pF @ 20 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G070N06TH Goford Semiconductor electronic component

G070N06TH

MOSFET N-CH 60V 110A 160W 6.4M(

Goford Semiconductor

50
RFQ

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 10V 6.4mOhm @ 20A, 10V 4V @ 250µA 74 nC @ 10 V ±20V 6512 pF @ 30 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
FQP4N20L onsemi electronic component

FQP4N20L

MOSFET N-CH 200V 3.8A TO220-3

onsemi

65
RFQ

Datasheet

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.8A (Tc) 5V, 10V 1.35Ohm @ 1.9A, 10V 2V @ 250µA 5.2 nC @ 5 V ±20V 310 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
TSM024NA04LCR RLG Taiwan Semiconductor Corporation electronic component

TSM024NA04LCR RLG

MOSFET N-CH 40V 170A 8PDFN

Taiwan Semiconductor Corporation

27
RFQ

-

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 170A (Tc) 4.5V, 10V 2.4mOhm @ 25A, 10V 2.5V @ 250µA 67 nC @ 10 V ±20V 4224 pF @ 20 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
TSM60NB900CH C5G Taiwan Semiconductor Corporation electronic component

TSM60NB900CH C5G

MOSFET N-CHANNEL 600V 4A TO251

Taiwan Semiconductor Corporation

49
RFQ

-

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 900mOhm @ 1.2A, 10V 4V @ 250µA 9.6 nC @ 10 V ±30V 315 pF @ 100 V - 36.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
IPAW60R360P7SXKSA1 Infineon Technologies electronic component

IPAW60R360P7SXKSA1

MOSFET N-CH 650V 9A TO220

Infineon Technologies

34
RFQ

Datasheet

CoolMOS™ P7 TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 360mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±30V 555 pF @ 400 V - 22W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220 Full Pack
G60N10T Goford Semiconductor electronic component

G60N10T

N100V,RD(MAX)<25M@10V,RD(MAX)<30

Goford Semiconductor

96
RFQ

Datasheet

TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 17mOhm @ 20A, 10V 2.5V @ 250µA 146 nC @ 10 V ±20V 5986 pF @ 50 V - 132W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
IRFR3711ZTRPBF Infineon Technologies electronic component

IRFR3711ZTRPBF

MOSFET N-CH 20V 93A DPAK

Infineon Technologies

26
RFQ

Datasheet

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 93A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V 2.45V @ 250µA 27 nC @ 4.5 V ±20V 2160 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
G75P04F Goford Semiconductor electronic component

G75P04F

MOSFET P-CH 40V 54A TO-220F

Goford Semiconductor

100
RFQ

Datasheet

- TO-220-3 Full Pack Tube Active P-Channel MOSFET (Metal Oxide) 40 V 54A (Tc) 4.5V, 10V 7mOhm @ 10A, 10V 2.5V @ 250µA 106 nC @ 10 V ±20V 6768 pF @ 20 V - 35.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
G110N06T Goford Semiconductor electronic component

G110N06T

N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

Goford Semiconductor

80
RFQ

Datasheet

TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 4.5V, 10V 6.4mOhm @ 20A, 10V 2.5V @ 250µA 122 nC @ 10 V ±20V 6512 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
TPS1100DR Texas Instruments electronic component

TPS1100DR

MOSFET P-CH 15V 1.6A 8SOIC

Texas Instruments

8,626
RFQ

Datasheet

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 15 V 1.6A (Ta) 2.7V, 10V 180mOhm @ 1.5A, 10V 1.5V @ 250µA 5.45 nC @ 10 V +2V, -15V - - 791mW (Ta) -40°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
AMIB108N15N3 Analog Power Inc. electronic component

AMIB108N15N3

MOSFET N-CH 150V 100A TO-263

Analog Power Inc.

98
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 6V, 10V 19mOhm @ 20A, 10V 1V @ 250µA 30 nC @ 6.5 V ±20V 2236 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263
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FETs, MOSFETs Electronic Components

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