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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
5N20A Goford Semiconductor electronic component

5N20A

N200V,RD(MAX)<650M@10V,VTH1V~3V,

Goford Semiconductor

747
RFQ

Datasheet

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 580mOhm @ 2.5A, 10V 3V @ 250µA 11 nC @ 10 V ±20V 247 pF @ 25 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
MTB3N60ET4 onsemi electronic component

MTB3N60ET4

N-CHANNEL POWER MOSFET

onsemi

700
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
IRFZ44N UMW electronic component

IRFZ44N

MOSFET N-CH 60V 50A TO220

UMW

438
RFQ

Datasheet

* - Tube Active - - - - - - - - - - - - - - - - -
IRF9543 Harris Corporation electronic component

IRF9543

P-CHANNEL POWER MOSFET

Harris Corporation

430
RFQ

Datasheet

- TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 80 V 15A (Tc) 10V 300mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IPP08CNE8NG Infineon Technologies electronic component

IPP08CNE8NG

N-CHANNEL POWER MOSFET

Infineon Technologies

425
RFQ

Datasheet

OptiMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 85 V 95A (Tc) 10V 6.4mOhm @ 95A, 10V 4V @ 130µA 99 nC @ 10 V ±20V 6690 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
HUFA75545P3 Fairchild Semiconductor electronic component

HUFA75545P3

MOSFET N-CH 80V 75A TO220-3

Fairchild Semiconductor

345
RFQ

Datasheet

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 10mOhm @ 75A, 10V 4V @ 250µA 235 nC @ 20 V ±20V 3750 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
G630J Goford Semiconductor electronic component

G630J

N200V, 9A,RD<0.28@10V,VTH1.0V~3.

Goford Semiconductor

140
RFQ

Datasheet

TrenchFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 250mOhm @ 4.5A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 515 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251
G400P06T Goford Semiconductor electronic component

G400P06T

P-60V,-32A,RD(MAX)<40M@-10V,VTH-

Goford Semiconductor

64
RFQ

Datasheet

TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 60 V 32A (Tc) 10V 40mOhm @ 12A, 10V 3V @ 250µA 46 nC @ 10 V ±20V 2598 pF @ 30 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G60N06T Goford Semiconductor electronic component

G60N06T

N60V, 50A,RD<17M@10V,VTH1.0V~2.0

Goford Semiconductor

53
RFQ

Datasheet

TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 17mOhm @ 5A, 10V 2V @ 250µA 39 nC @ 10 V ±20V 2333 pF @ 30 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
IRFBC42 Harris Corporation electronic component

IRFBC42

N-CHANNEL POWER MOSFET

Harris Corporation

1,000
RFQ

Datasheet

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Tc) 10V 1.6Ohm @ 3.4A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
2N65G UMW electronic component

2N65G

SOT-223 N-CHANNEL POWER MOSFETS

UMW

835
RFQ

Datasheet

UMW TO-261-4, TO-261AA Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 650 V 2A (Tj) 10V 5.5Ohm @ 1A, 10V 4V @ 250µA 14.5 nC @ 10 V ±30V 311 pF @ 25 V - - 150°C (TJ) - - Surface Mount SOT-223
FQB55N06TM Fairchild Semiconductor electronic component

FQB55N06TM

MOSFET N-CH 60V 55A D2PAK

Fairchild Semiconductor

696
RFQ

Datasheet

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V 20mOhm @ 27.5A, 10V 4V @ 250µA 46 nC @ 10 V ±25V 1690 pF @ 25 V - 3.75W (Ta), 133W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
BUK7E07-55B,127 NXP USA Inc. electronic component

BUK7E07-55B,127

MOSFET N-CH 55V 75A I2PAK

NXP USA Inc.

6,566
RFQ

Datasheet

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.1mOhm @ 25A, 10V 4V @ 1mA 53 nC @ 10 V ±20V 3760 pF @ 25 V - 203W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
BSC079N03SG Infineon Technologies electronic component

BSC079N03SG

MOSFET N-CH 30V 14.6A/40A TDSON

Infineon Technologies

634
RFQ

Datasheet

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14.6A (Ta), 40A (Tc) 4.5V, 10V 7.9mOhm @ 40A, 10V 2V @ 30µA 17 nC @ 5 V ±20V 2230 pF @ 15 V - 2.8W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
FCPF380N60-F152 Fairchild Semiconductor electronic component

FCPF380N60-F152

600V, N-CHANNEL, MOSFET, TO-220

Fairchild Semiconductor

476
RFQ

Datasheet

SuperFET® II TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tc) 10V 380mOhm @ 5A, 10V 3.5V @ 250µA 40 nC @ 10 V ±20V 1665 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
PMCM6501VNEZ Nexperia USA Inc. electronic component

PMCM6501VNEZ

MOSFET N-CH 12V 7.3A 6WLCSP

Nexperia USA Inc.

65
RFQ

Datasheet

- 6-XFBGA, WLCSP Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12 V 7.3A (Ta) 1.5V, 4.5V 18mOhm @ 3A, 4.5V 900mV @ 250µA 24 nC @ 4.5 V ±8V 920 pF @ 6 V - 556mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-WLCSP (1.48x0.98)
TSM045NA03CR RLG Taiwan Semiconductor Corporation electronic component

TSM045NA03CR RLG

MOSFET N-CH 30V 108A 8PDFN

Taiwan Semiconductor Corporation

62
RFQ

-

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 108A (Tc) 4.5V, 10V 4.5mOhm @ 18A, 10V 2.5V @ 250µA 19 nC @ 10 V ±20V 1194 pF @ 15 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
RF1S45N06LESM Harris Corporation electronic component

RF1S45N06LESM

N-CHANNEL POWER MOSFET

Harris Corporation

843
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 45A - - - - - - - - - - - Surface Mount TO-263AB
2SK1419 onsemi electronic component

2SK1419

N-CHANNEL POWER MOSFET

onsemi

768
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
IRFR9120 Harris Corporation electronic component

IRFR9120

MOSFET P-CH 100V 5.6A DPAK

Harris Corporation

975
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 600mOhm @ 3.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
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FETs, MOSFETs Electronic Components

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