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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPDH6N03LAG Infineon Technologies electronic component

IPDH6N03LAG

MOSFET N-CH 25V 50A TO252-3

Infineon Technologies

81
RFQ

Datasheet

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 6mOhm @ 50A, 10V 2V @ 30µA 19 nC @ 5 V ±20V 2390 pF @ 15 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
SK8403190L Panasonic Electronic Components electronic component

SK8403190L

MOSFET N-CH 30V 10A 8HSSO

Panasonic Electronic Components

69
RFQ

Datasheet

- 8-PowerSMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 19A (Tc) 4.5V, 10V 10mOhm @ 70A, 10V 3V @ 1.01mA 6.3 nC @ 4.5 V ±20V 1092 pF @ 10 V - 2W (Ta), 19W (Tc) 150°C (TJ) - - Surface Mount HSSO8-F1-B
NP32N055HLE-AZ NEC Corporation electronic component

NP32N055HLE-AZ

32A, 55V, 0.033OHM, N-CHANNEL ,

NEC Corporation

1,000
RFQ

Datasheet

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 32A (Ta) 4.5V, 10V 24mOhm @ 16A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 2000 pF @ 25 V - 1.2W (Ta), 66W (Tc) 175°C - - Through Hole TO-251 (MP-3)
FDB8870-F085 onsemi electronic component

FDB8870-F085

MOSFET N-CH 30V 23A/160A TO263AB

onsemi

4,774
RFQ

Datasheet

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 160A (Tc) 4.5V, 10V 3.9mOhm @ 35A, 10V 2.5V @ 250µA 132 nC @ 10 V ±20V 5200 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
RF1S45N03L Harris Corporation electronic component

RF1S45N03L

N-CHANNEL POWER MOSFET

Harris Corporation

770
RFQ

Datasheet

- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 5V 22mOhm @ 45A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1650 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK (TO-262)
IPI100N04S3-03 Infineon Technologies electronic component

IPI100N04S3-03

N-CHANNEL POWER MOSFET

Infineon Technologies

722
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
AUIRFZ44Z International Rectifier electronic component

AUIRFZ44Z

MOSFET N-CH 55V 51A TO220

International Rectifier

613
RFQ

Datasheet

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
2SK3704-CB11 onsemi electronic component

2SK3704-CB11

MOSFET N-CH

onsemi

400
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
FQPF4N80 Fairchild Semiconductor electronic component

FQPF4N80

MOSFET N-CH 800V 2.2A TO220F

Fairchild Semiconductor

334
RFQ

Datasheet

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2.2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 880 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
GSFH0680 Good-Ark Semiconductor electronic component

GSFH0680

MOSFET, N-CH, SINGLE, 80.00A, 60

Good-Ark Semiconductor

260
RFQ

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7mOhm @ 20A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 4000 pF @ 30 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
5N65F UMW electronic component

5N65F

MOSFET N-CH 650V 5A TO220F

UMW

1,000
RFQ

Datasheet

* TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 5A (Tc) 10V 2Ohm @ 2.5A, 10V 4V @ 250µA - ±30V - - 50W (Tc) 150°C (TJ) - - Through Hole TO-220F-3
RJJ0315DSP-WS#J5 Renesas Electronics Corporation electronic component

RJJ0315DSP-WS#J5

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

885
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
IPB100N06S3-04 Infineon Technologies electronic component

IPB100N06S3-04

MOSFET N-CH 55V 100A TO263-3

Infineon Technologies

7,353
RFQ

Datasheet

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 4.1mOhm @ 80A, 10V 4V @ 150µA 314 nC @ 10 V ±20V 14230 pF @ 25 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
SPU07N60C3BKMA1 Infineon Technologies electronic component

SPU07N60C3BKMA1

MOSFET N-CH 650V 7.3A TO251-3

Infineon Technologies

4,443
RFQ

Datasheet

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-21
TSM055N03PQ56 RLG Taiwan Semiconductor Corporation electronic component

TSM055N03PQ56 RLG

MOSFET N-CH 30V 80A 8PDFN

Taiwan Semiconductor Corporation

100
RFQ

Datasheet

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.5V @ 250µA 11.1 nC @ 4.5 V ±20V 1160 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
TSM055N03EPQ56 RLG Taiwan Semiconductor Corporation electronic component

TSM055N03EPQ56 RLG

MOSFET N-CH 30V 80A 8PDFN

Taiwan Semiconductor Corporation

70
RFQ

Datasheet

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.5V @ 250µA 11.1 nC @ 4.5 V ±20V 1210 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
STH175N4F6-6AG STMicroelectronics electronic component

STH175N4F6-6AG

MOSFET N-CH 40V 120A H2PAK-2

STMicroelectronics

591
RFQ

-

STripFET™ F6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.4mOhm @ 60A, 10V 4.5V @ 250µA 130 nC @ 10 V ±20V 7735 pF @ 20 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-2
IRFD313 Harris Corporation electronic component

IRFD313

N-CHANNEL POWER MOSFET

Harris Corporation

900
RFQ

Datasheet

- 4-DIP (0.300", 7.62mm) Bulk Active N-Channel MOSFET (Metal Oxide) 350 V 300mA (Tc) 10V 5Ohm @ 200mA, 10V 4V @ 250µA 7.5 nC @ 10 V ±20V 135 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 4-DIP, Hexdip
2SK3305-S-AZ Renesas Electronics Corporation electronic component

2SK3305-S-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

884
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
RF1S45N06SM Harris Corporation electronic component

RF1S45N06SM

N-CHANNEL POWER MOSFET

Harris Corporation

700
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 45A - - - - - - - - - - - Surface Mount TO-263AB
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FETs, MOSFETs Electronic Components

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