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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IXFR200N10P Littelfuse Inc. electronic component

IXFR200N10P

MOSFET N-CH 100V 133A ISOPLUS247

Littelfuse Inc.

 8
RFQ

Datasheet

 		HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 133A (Tc) 10V 9mOhm @ 100A, 10V 5V @ 8mA 235 nC @ 10 V ±20V 7600 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole ISOPLUS247™
IXFQ140N20X3 Littelfuse Inc. electronic component

IXFQ140N20X3

MOSFET N-CH 200V 140A TO3P

Littelfuse Inc.

 28
RFQ

Datasheet

 		HiPerFET™, Ultra X3 TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 140A (Tc) 10V 9.6mOhm @ 70A, 10V 4.5V @ 4mA 127 nC @ 10 V ±20V 7660 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
TK040Z65Z,S1F Toshiba Semiconductor and Storage electronic component

TK040Z65Z,S1F

MOSFET N-CH 650V 57A TO247-4L

Toshiba Semiconductor and Storage

 22
RFQ

Datasheet

 		DTMOSVI TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 57A (Ta) 10V 40mOhm @ 28.5A, 10V 4V @ 2.85mA 105 nC @ 10 V ±30V 6250 pF @ 300 V - 360W (Tc) 150°C - - Through Hole TO-247-4L(T)
IXFH170N10P Littelfuse Inc. electronic component

IXFH170N10P

MOSFET N-CH 100V 170A TO247AD

Littelfuse Inc.

 85
RFQ

Datasheet

 		HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 9mOhm @ 500mA, 10V 5V @ 4mA 198 nC @ 10 V ±20V 6000 pF @ 25 V - 715W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD (IXFH)
APT6029BLLG Microchip Technology electronic component

APT6029BLLG

MOSFET N-CH 600V 21A TO247

Microchip Technology

 63
RFQ

Datasheet

 		POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) - 290mOhm @ 10.5A, 10V 5V @ 1mA 65 nC @ 10 V - 2615 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
IXFH140N20X3 Littelfuse Inc. electronic component

IXFH140N20X3

MOSFET N-CH 200V 140A TO247

Littelfuse Inc.

 16
RFQ

Datasheet

 		HiPerFET™, Ultra X3 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 140A (Tc) 10V 9.6mOhm @ 70A, 10V 4.5V @ 4mA 127 nC @ 10 V ±20V 7660 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
IXFT140N20X3HV Littelfuse Inc. electronic component

IXFT140N20X3HV

MOSFET N-CH 200V 140A TO268HV

Littelfuse Inc.

 17
RFQ

Datasheet

 		HiPerFET™, Ultra X3 TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 140A (Tc) 10V 9.6mOhm @ 70A, 10V 4.5V @ 4mA 127 nC @ 10 V ±20V 7660 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268HV (IXFT)
APT34M60S Microchip Technology electronic component

APT34M60S

MOSFET N-CH 600V 36A D3PAK

Microchip Technology

 46
RFQ

Datasheet

 		POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 17A, 10V 5V @ 1mA 165 nC @ 10 V ±30V 6640 pF @ 25 V - 624W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
R6042JNZ4C13 Rohm Semiconductor electronic component

R6042JNZ4C13

MOSFET N-CH 600V 42A TO247G

Rohm Semiconductor

 96
RFQ

Datasheet

 		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 15V 104mOhm @ 21A, 15V 7V @ 5.5mA 100 nC @ 15 V ±30V 3500 pF @ 100 V - 495W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247G
IXTK102N30P Littelfuse Inc. electronic component

IXTK102N30P

MOSFET N-CH 300V 102A TO264

Littelfuse Inc.

 36
RFQ

Datasheet

 		Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 300 V 102A (Tc) 10V 33mOhm @ 500mA, 10V 5V @ 500µA 224 nC @ 10 V ±20V 7500 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 (IXTK)
STWA75N65DM6 STMicroelectronics electronic component

STWA75N65DM6

N-CHANNEL 650 V, 33 MOHM TYP., 7

STMicroelectronics

 14
RFQ

Datasheet

 		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 36mOhm @ 37.5A, 10V 4.75V @ 250µA 118 nC @ 10 V ±25V 5700 pF @ 100 V - 480W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 Long Leads
IXFX80N50P IXYS electronic component

IXFX80N50P

MOSFET N-CH 500V 80A PLUS247-3

IXYS

 30
RFQ

Datasheet

 		HiPerFET™, Polar TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 500 V 80A (Tc) 10V 65mOhm @ 40A, 10V 5V @ 8mA 197 nC @ 10 V ±30V 12700 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
IXTK140N30P IXYS electronic component

IXTK140N30P

MOSFET N-CH 300V 140A TO264

IXYS

 14
RFQ

Datasheet

 		Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 300 V 140A (Tc) 10V 24mOhm @ 70A, 10V 5V @ 500µA 185 nC @ 10 V ±20V 14800 pF @ 25 V - - - - - Through Hole TO-264 (IXTK)
IXFT180N20X3HV Littelfuse Inc. electronic component

IXFT180N20X3HV

MOSFET N-CH 200V 180A TO268HV

Littelfuse Inc.

 29
RFQ

Datasheet

 		HiPerFET™, Ultra X3 TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 180A (Tc) 10V 7.5mOhm @ 90A, 10V 4.5V @ 4mA 154 nC @ 10 V ±20V 10300 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268HV (IXFT)
APT5010LLLG Microchip Technology electronic component

APT5010LLLG

MOSFET N-CH 500V 46A TO264

Microchip Technology

 30
RFQ

Datasheet

 		POWER MOS 7® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 23A, 10V 5V @ 2.5mA 95 nC @ 10 V ±30V 4360 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
APT5010B2FLLG Microchip Technology electronic component

APT5010B2FLLG

MOSFET N-CH 500V 46A T-MAX

Microchip Technology

 40
RFQ

Datasheet

 		POWER MOS 7® TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 23A, 10V 5V @ 2.5mA 95 nC @ 10 V ±30V 4360 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT5010LFLLG Microchip Technology electronic component

APT5010LFLLG

MOSFET N-CH 500V 46A TO264

Microchip Technology

 43
RFQ

Datasheet

 		POWER MOS 7® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 23A, 10V 5V @ 2.5mA 95 nC @ 10 V ±30V 4360 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
IXFH150N20T Littelfuse Inc. electronic component

IXFH150N20T

MOSFET N-CH 200V 150A TO247AD

Littelfuse Inc.

 22
RFQ

Datasheet

 		HiPerFET™, Trench TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 150A (Tc) 10V 15mOhm @ 75A, 10V 5V @ 4mA 177 nC @ 10 V ±20V 11700 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
TP65H050WSQA Transphorm electronic component

TP65H050WSQA

GANFET N-CH 650V 36A TO247-3

Transphorm

 21
RFQ

Datasheet

 		- TO-247-3 Tube Active N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 36A (Tc) 10V 60mOhm @ 25A, 10V 4.8V @ 700µA 24 nC @ 10 V ±20V 1000 pF @ 400 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
IXFX48N60Q3 IXYS electronic component

IXFX48N60Q3

MOSFET N-CH 600V 48A PLUS247-3

IXYS

 38
RFQ

Datasheet

 		HiPerFET™, Q3 Class TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 140mOhm @ 24A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 7020 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
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FETs, MOSFETs Electronic Components

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Frequently Asked Questions

Q1: What products are included in FETs, MOSFETs?
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Q2: Can I request a quotation for FETs, MOSFETs components?
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Q3: Are datasheets and technical information available?
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Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for FETs, MOSFETs and other electronic components.

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