FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK110A65Z,S4X MOSFET N-CH 650V 24A TO220SIS Toshiba Semiconductor and Storage	42	RFQ	Datasheet	DTMOSVI	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	24A (Ta)	10V	110mOhm @ 12A, 10V	4V @ 1.02mA	40 nC @ 10 V	±30V	2250 pF @ 300 V	-	45W (Tc)	150°C	-	-	Through Hole	TO-220SIS
IXFH96N20P MOSFET N-CH 200V 96A TO247AD IXYS	29	RFQ	Datasheet	HiPerFET™, Polar	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	96A (Tc)	10V	24mOhm @ 500mA, 10V	5V @ 4mA	145 nC @ 10 V	±20V	4800 pF @ 25 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
IXFP76N15T2 MOSFET N-CH 150V 76A TO220AB Littelfuse Inc.	31	RFQ	Datasheet	HiPerFET™, TrenchT2™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	76A (Tc)	10V	20mOhm @ 38A, 10V	4.5V @ 250µA	97 nC @ 10 V	±20V	5800 pF @ 25 V	-	350W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
TK14N65W5,S1F MOSFET N-CH 650V 13.7A TO247 Toshiba Semiconductor and Storage	30	RFQ	Datasheet	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	13.7A (Ta)	10V	300mOhm @ 6.9A, 10V	4.5V @ 690µA	40 nC @ 10 V	±30V	1300 pF @ 300 V	-	130W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
IXTY14N60X2 MOSFET N-CH 600V 14A TO252 Littelfuse Inc.	33	RFQ	Datasheet	Ultra X2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	14A (Tc)	10V	250mOhm @ 7A, 10V	4.5V @ 250µA	16.7 nC @ 10 V	±30V	740 pF @ 25 V	-	180W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
SIHB21N60EF-GE3 MOSFET N-CH 600V 21A TO263AB Vishay Siliconix	30	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	176mOhm @ 11A, 10V	4V @ 250µA	84 nC @ 10 V	±30V	2030 pF @ 100 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IPW60R125CFD7XKSA1 MOSFET N-CH 600V 18A TO247-3 Infineon Technologies	30	RFQ	Datasheet	OptiMOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	125mOhm @ 7.8A, 10V	4.5V @ 390µA	36 nC @ 10 V	±20V	1503 pF @ 400 V	-	92W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3
TK25N60X,S1F MOSFET N-CH 600V 25A TO247 Toshiba Semiconductor and Storage	26	RFQ	Datasheet	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Ta)	10V	125mOhm @ 7.5A, 10V	3.5V @ 1.2mA	40 nC @ 10 V	±30V	2400 pF @ 300 V	-	180W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
TK090A65Z,S4X MOSFET N-CH 650V 30A TO220SIS Toshiba Semiconductor and Storage	68	RFQ	Datasheet	DTMOSVI	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	30A (Ta)	10V	90mOhm @ 15A, 10V	4V @ 1.27mA	47 nC @ 10 V	±30V	2780 pF @ 300 V	-	45W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK28A65W,S5X MOSFET N-CH 650V 27.6A TO220SIS Toshiba Semiconductor and Storage	100	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	27.6A (Ta)	10V	110mOhm @ 13.8A, 10V	3.5V @ 1.6mA	75 nC @ 10 V	±30V	3000 pF @ 300 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK16J60W,S1VE X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	42	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	3.7V @ 790µA	38 nC @ 10 V	±30V	1350 pF @ 300 V	-	130W (Tc)	150°C	-	-	Through Hole	TO-3P(N)
IXFH10N80P MOSFET N-CH 800V 10A TO247AD Littelfuse Inc.	72	RFQ	Datasheet	HiPerFET™, Polar	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	10A (Tc)	10V	1.1Ohm @ 5A, 10V	5.5V @ 2.5mA	40 nC @ 10 V	±30V	2050 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
IPP65R099CFD7AAKSA1 MOSFET N-CH 650V 24A TO220-3 Infineon Technologies	38	RFQ	Datasheet	CoolMOS™ CFD7A	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	99mOhm @ 12.5A, 10V	4.5V @ 630µA	53 nC @ 10 V	±20V	2513 pF @ 400 V	-	127W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO220-3
SUK3015 MOSFET WITH ZENER DIODE 300V/15A Sanken Electric USA Inc.	26	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tray	Active	N-Channel	MOSFET (Metal Oxide)	300 V	15A (Ta)	10V	150mOhm @ 7A, 10V	2.5V @ 1mA	-	±25V	1800 pF @ 10 V	-	89W (Tc)	150°C (TJ)	-	-	Surface Mount	TO-220S
IXTP260N055T2 MOSFET N-CH 55V 260A TO220AB Littelfuse Inc.	67	RFQ	Datasheet	TrenchT2™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	260A (Tc)	10V	3.3mOhm @ 50A, 10V	4V @ 250µA	140 nC @ 10 V	±20V	10800 pF @ 25 V	-	480W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
R6515KNJTL MOSFET N-CH 650V 15A LPTS Rohm Semiconductor	80	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	15A (Tc)	10V	315mOhm @ 6.5A, 10V	5V @ 430µA	27.5 nC @ 10 V	±20V	1050 pF @ 25 V	-	184W (Tc)	150°C (TJ)	-	-	Surface Mount	LPTS
R6520KNJTL MOSFET N-CH 650V 20A LPTS Rohm Semiconductor	98	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	205mOhm @ 9.5A, 10V	5V @ 630µA	40 nC @ 10 V	±20V	1550 pF @ 25 V	-	231W (Tc)	150°C (TJ)	-	-	Surface Mount	LPTS
SIHB35N60E-GE3 MOSFET N-CH 650V 32A D2PAK Vishay Siliconix	93	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	32A (Tc)	10V	94mOhm @ 17A, 10V	4V @ 250µA	132 nC @ 10 V	±30V	2760 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
STW35N60DM2 MOSFET N-CH 600V 28A TO247 STMicroelectronics	27	RFQ	Datasheet	MDmesh™ DM2	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	28A (Tc)	10V	110mOhm @ 14A, 10V	5V @ 250µA	54 nC @ 10 V	±25V	2400 pF @ 100 V	-	210W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
STI47N60DM6AG POWER TRANSISTORS STMicroelectronics	30	RFQ	Datasheet	MDmesh™ DM6	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	36A (Tc)	10V	80mOhm @ 18A, 10V	4.75V @ 250µA	55 nC @ 10 V	±25V	2350 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-262 (I2PAK)

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FETs, MOSFETs Electronic Components

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