FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
STW26NM60N N-channel 600 V, 0.135 Ohm typ., STMicroelectronics	68	RFQ	Datasheet	MDmesh™ II	TO-247-3	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	165mOhm @ 10A, 10V	4V @ 250µA	60 nC @ 10 V	±30V	1800 pF @ 50 V	-	140W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247-3
GS61008T-MR GS61008T-MR Infineon Technologies Canada Inc.	96	RFQ	-	-	4-SMD, No Lead	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	90A (Tc)	6V	9.5mOhm @ 27A, 6V	1.3V @ 7mA	12 nC @ 6 V	+7V, -10V	590 pF @ 50 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-
IXFH50N60P3 MOSFET N-CH 600V 50A TO247AD Littelfuse Inc.	66	RFQ	Datasheet	HiPerFET™, Polar3™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	50A (Tc)	10V	145mOhm @ 500mA, 10V	5V @ 4mA	94 nC @ 10 V	±30V	6300 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
IXFH150N25X3 MOSFET N-CH 250V 150A TO247 Littelfuse Inc.	48	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	150A (Tc)	10V	9mOhm @ 75A, 10V	4.5V @ 4mA	154 nC @ 10 V	±20V	10400 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
APT30M85BVRG MOSFET N-CH 300V 40A TO247 Microchip Technology	80	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	40A (Tc)	10V	85mOhm @ 500mA, 10V	4V @ 1mA	195 nC @ 10 V	±30V	4950 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
TK040N65Z,S1F MOSFET N-CH 650V 57A TO247 Toshiba Semiconductor and Storage	76	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	57A (Ta)	10V	40mOhm @ 28.5A, 10V	4V @ 2.85mA	105 nC @ 10 V	±30V	6250 pF @ 300 V	-	360W (Tc)	150°C	-	-	Through Hole	TO-247
TW140N120C,S1F G3 1200V SIC-MOSFET TO-247 140M Toshiba Semiconductor and Storage	70	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	20A (Tc)	18V	182mOhm @ 10A, 18V	5V @ 1mA	24 nC @ 18 V	+25V, -10V	691 pF @ 800 V	-	107W (Tc)	175°C	-	-	Through Hole	TO-247
TK042N65Z5,S1F(S 650V DTMOS6 HSD 42MOHM TO-247 Toshiba Semiconductor and Storage	86	RFQ	Datasheet	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	55A (Ta)	10V	42mOhm @ 27.5A, 10V	4.5V @ 2.85mA	105 nC @ 10 V	±30V	6280 pF @ 300 V	-	360W (Tc)	150°C	-	-	Through Hole	TO-247
STW26NM50 MOSFET N-CH 500V 30A TO247-3 STMicroelectronics	57	RFQ	Datasheet	MDmesh™	TO-247-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	500 V	30A (Tc)	10V	120mOhm @ 13A, 10V	5V @ 250µA	106 nC @ 10 V	±30V	3000 pF @ 25 V	-	313W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247-3
APT1001RBVRG MOSFET N-CH 1000V 11A TO247 Microchip Technology	37	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	11A (Tc)	-	1Ohm @ 500mA, 10V	4V @ 1mA	225 nC @ 10 V	-	3660 pF @ 25 V	-	-	-	-	-	Through Hole	TO-247 [B]
IXFT80N65X2HV MOSFET N-CH 650V 80A TO268HV Littelfuse Inc.	78	RFQ	Datasheet	HiPerFET™, Ultra X2	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	80A (Tc)	10V	-	5V @ 4mA	140 nC @ 10 V	±30V	8300 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXFT)
APT6025BVRG MOSFET N-CH 600V 25A TO247 Microchip Technology	71	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Tc)	-	250mOhm @ 500mA, 10V	4V @ 1mA	275 nC @ 10 V	-	5160 pF @ 25 V	-	-	-	-	-	Through Hole	TO-247 [B]
IXKH47N60C MOSFET N-CH 600V 47A TO247AD IXYS	30	RFQ	Datasheet	CoolMOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	47A (Tc)	10V	70mOhm @ 30A, 10V	4V @ 2mA	650 nC @ 10 V	±20V	-	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD
IMLT65R020M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	39	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTT110N10L2 MOSFET N-CH 100V 110A TO268 IXYS	46	RFQ	Datasheet	Linear L2™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	110A (Tc)	10V	18mOhm @ 55A, 10V	4.5V @ 250µA	260 nC @ 10 V	±20V	10500 pF @ 25 V	-	600W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA
APT37M100L MOSFET N-CH 1000V 37A TO264 Microchip Technology	25	RFQ	Datasheet	-	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	37A (Tc)	10V	330mOhm @ 18A, 10V	5V @ 2.5mA	305 nC @ 10 V	±30V	9835 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264
TW045Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 4 Toshiba Semiconductor and Storage	50	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	18V	62mOhm @ 20A, 18V	5V @ 6.7mA	57 nC @ 18 V	+25V, -10V	1969 pF @ 800 V	-	182W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
AIMW120R045M1XKSA1 SICFET N-CH 1200V 52A TO247-3 Infineon Technologies	35	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	52A (Tc)	-	59mOhm @ 20A, 15V	5.7V @ 10mA	57 nC @ 15 V	+20V, -7V	2130 pF @ 800 V	-	228W (Tc)	-40°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-3
TW045N120C,S1F G3 1200V SIC-MOSFET TO-247 45MO Toshiba Semiconductor and Storage	71	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	18V	59mOhm @ 20A, 18V	5V @ 6.7mA	57 nC @ 18 V	+25V, -10V	1969 pF @ 800 V	-	182W (Tc)	175°C	-	-	Through Hole	TO-247
IPDQ60R007CM8XTMA1 IPDQ60R007CM8XTMA1 Infineon Technologies	15	RFQ	-	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	288A (Tc)	10V	7mOhm @ 100A, 10V	4.7V @ 3.24mA	370 nC @ 10 V	±20V	16385 pF @ 400 V	-	1.249kW (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22

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FETs, MOSFETs Electronic Components

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