FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK8A50D(STA4,Q,M) MOSFET N-CH 500V 8A TO220SIS Toshiba Semiconductor and Storage	95	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	8A (Ta)	10V	850mOhm @ 4A, 10V	4V @ 1mA	16 nC @ 10 V	±30V	800 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
PSMNR90-40YSNX PSMNR90-40YSN/SOT669/LFPAK Nexperia USA Inc.	43	RFQ	Datasheet	-	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	320A (Tc)	10V	0.97mOhm @ 25A, 10V	3.6V @ 1mA	189 nC @ 10 V	±20V	10622 pF @ 25 V	Schottky Diode (Body)	268W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8
STP55NF06FP MOSFET N-CH 60V 50A TO220FP STMicroelectronics	36	RFQ	Datasheet	STripFET™ II	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	10V	18mOhm @ 27.5A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	1300 pF @ 25 V	-	30W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220FP
TPH2R306NH,L1Q MOSFET N-CH 60V 60A 8SOP Toshiba Semiconductor and Storage	48	RFQ	Datasheet	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	60A (Tc)	6.5V, 10V	2.3mOhm @ 30A, 10V	4V @ 1mA	72 nC @ 10 V	±20V	6100 pF @ 30 V	-	1.6W (Ta), 78W (Tc)	150°C (TJ)	-	-	Surface Mount	8-SOP Advance (5x5)
FDP3652 MOSFET N-CH 100V 9A/61A TO220-3 onsemi	4,451	RFQ	Datasheet	PowerTrench®	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	100 V	9A (Ta), 61A (Tc)	6V, 10V	16mOhm @ 61A, 10V	4V @ 250µA	53 nC @ 10 V	±20V	2880 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
CSD19531KCS MOSFET N-CH 100V 100A TO220-3 Texas Instruments	88	RFQ	Datasheet	NexFET™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Ta)	6V, 10V	7.7mOhm @ 60A, 10V	3.3V @ 250µA	38 nC @ 10 V	±20V	3870 pF @ 50 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
IPP040N06NAKSA1 MOSFET N-CH 60V 20A/80A TO220-3 Infineon Technologies	92	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	20A (Ta), 80A (Tc)	6V, 10V	4mOhm @ 80A, 10V	2.8V @ 50µA	38 nC @ 10 V	±20V	2700 pF @ 30 V	-	3W (Ta), 107W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
STP3NK90Z MOSFET N-CH 900V 3A TO220AB STMicroelectronics	52	RFQ	Datasheet	SuperMESH™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	3A (Tc)	10V	4.8Ohm @ 1.5A, 10V	4.5V @ 50µA	22.7 nC @ 10 V	±30V	590 pF @ 25 V	-	90W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
STP100N10F7 MOSFET N CH 100V 80A TO-220 STMicroelectronics	40	RFQ	Datasheet	DeepGATE™, STripFET™ VII	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	80A (Tc)	10V	8mOhm @ 40A, 10V	4.5V @ 250µA	61 nC @ 10 V	±20V	4369 pF @ 50 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220
TK12A50D(STA4,Q,M) MOSFET N-CH 500V 12A TO220SIS Toshiba Semiconductor and Storage	49	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	12A (Ta)	10V	520mOhm @ 6A, 10V	4V @ 1mA	25 nC @ 10 V	±30V	1350 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
IPA050N10NM5SXKSA1 MOSFET N-CH 100V 66A TO220 Infineon Technologies	30	RFQ	Datasheet	OptiMOS™ 5	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	66A (Tc)	6V, 10V	5mOhm @ 33A, 10V	3.8V @ 84µA	68 nC @ 10 V	±20V	4700 pF @ 50 V	-	38W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220 Full Pack
IPA60R190P6XKSA1 MOSFET N-CH 600V 20.2A TO220-FP Infineon Technologies	55	RFQ	Datasheet	CoolMOS™ P6	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20.2A (Tc)	10V	190mOhm @ 7.6A, 10V	4.5V @ 630µ	37 nC @ 10 V	±20V	1750 pF @ 100 V	-	34W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP
TK15A50D(STA4,Q,M) MOSFET N-CH 500V 15A TO220SIS Toshiba Semiconductor and Storage	81	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	15A (Ta)	10V	300mOhm @ 7.5A, 10V	4V @ 1mA	40 nC @ 10 V	±30V	2300 pF @ 25 V	-	50W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
NTB7D3N15MC NTB7D3N15MC onsemi	41	RFQ	Datasheet	PowerTrench®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	15.2A (Ta), 101A (Tc)	8V, 10V	7.3mOhm @ 62A, 10V	4.5V @ 342µA	53 nC @ 10 V	±20V	4250 pF @ 75 V	-	3.75W (Ta), 166W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
TK100E08N1,S1X MOSFET N-CH 80V 100A TO220 Toshiba Semiconductor and Storage	96	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	100A (Ta)	10V	3.2mOhm @ 50A, 10V	4V @ 1mA	130 nC @ 10 V	±20V	9000 pF @ 40 V	-	255W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
IRFP140PBF MOSFET N-CH 100V 31A TO247-3 Vishay Siliconix	77	RFQ	-	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	31A (Tc)	10V	77mOhm @ 19A, 10V	4V @ 250µA	72 nC @ 10 V	±20V	1700 pF @ 25 V	-	180W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC
FDP047N10 MOSFET N-CH 100V 120A TO220-3 onsemi	87	RFQ	Datasheet	PowerTrench®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	4.7mOhm @ 75A, 10V	4.5V @ 250µA	210 nC @ 10 V	±20V	15265 pF @ 25 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
IRFP264PBF MOSFET N-CH 250V 38A TO247-3 Vishay Siliconix	32	RFQ	-	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	38A (Tc)	10V	75mOhm @ 23A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	5400 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IXTP36P15P MOSFET P-CH 150V 36A TO220AB Littelfuse Inc.	90	RFQ	Datasheet	Polar P3™	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	150 V	36A (Tc)	10V	110mOhm @ 18A, 10V	4.5V @ 250µA	55 nC @ 10 V	±20V	3100 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IXTA3N120HV MOSFET N-CH 1200V 3A TO263 Littelfuse Inc.	85	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	3A (Tc)	10V	4.5Ohm @ 500mA, 10V	5V @ 250µA	42 nC @ 10 V	±20V	1100 pF @ 25 V	-	200W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263HV

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FETs, MOSFETs Electronic Components

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