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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPP100N08S207AKSA1 Infineon Technologies electronic component

IPP100N08S207AKSA1

MOSFET N-CH 75V 100A TO220-3

Infineon Technologies

3,235
RFQ

Datasheet

OptiMOS™ TO-220-3 Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.1mOhm @ 80A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
2SJ684-TL-E Sanyo electronic component

2SJ684-TL-E

MOSFET P-CH

Sanyo

16,500
RFQ

-

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SI7414DN-T1-GE3 Vishay Siliconix electronic component

SI7414DN-T1-GE3

MOSFET N-CH 60V 5.6A PPAK1212-8

Vishay Siliconix

6,579
RFQ

Datasheet

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 5.6A (Ta) 4.5V, 10V 25mOhm @ 8.7A, 10V 3V @ 250µA 25 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
SUD50N03-06AP-E3 Vishay Siliconix electronic component

SUD50N03-06AP-E3

MOSFET N-CH 30V 90A TO252

Vishay Siliconix

3,067
RFQ

Datasheet

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 5.7mOhm @ 20A, 10V 2.4V @ 250µA 95 nC @ 10 V ±20V 3800 pF @ 15 V - 10W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
GT065P06D5 Goford Semiconductor electronic component

GT065P06D5

MOSFET P-CH 60V 103A DFN5*6-8L

Goford Semiconductor

2,579
RFQ

Datasheet

SGT 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 103A (Tc) 4.5V, 10V 7mOhm @ -20A, -10V 2.5V @ 250µA 62 nC @ 10 V ±20V 5730 pF @ 30 V - 178W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
IRFPG42 Harris Corporation electronic component

IRFPG42

N-CHANNEL POWER MOSFET

Harris Corporation

2,125
RFQ

Datasheet

- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 1000 V 3.9A (Tc) 10V 4.2Ohm @ 2.5A, 10V 4V @ 250µA 120 nC @ 10 V ±20V - - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
STS4DNFS30 STMicroelectronics electronic component

STS4DNFS30

MOSFET N-CH 30V 4.5A 8SO

STMicroelectronics

1,500
RFQ

Datasheet

STripFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.5A (Tc) 5V, 10V 55mOhm @ 2A, 10V 1V @ 250µA 4.7 nC @ 5 V ±20V 330 pF @ 25 V Schottky Diode (Isolated) 2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SIHP8N50D-E3 Vishay Siliconix electronic component

SIHP8N50D-E3

MOSFET N-CH 500V 8.7A TO220AB

Vishay Siliconix

1,000
RFQ

Datasheet

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8.7A (Tc) 10V 850mOhm @ 4A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 527 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IPP060N06NAKSA1 Infineon Technologies electronic component

IPP060N06NAKSA1

MOSFET N-CH 60V 17A/45A TO220-3

Infineon Technologies

474
RFQ

Datasheet

OptiMOS™ TO-220-3 Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 45A (Tc) 6V, 10V 6mOhm @ 45A, 10V 2.8V @ 36µA 27 nC @ 10 V ±20V 2000 pF @ 30 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
RJK2017DPP-90#T2F Renesas Electronics Corporation electronic component

RJK2017DPP-90#T2F

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

67,500
RFQ

Datasheet

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IPB80N03S4L03ATMA1 Infineon Technologies electronic component

IPB80N03S4L03ATMA1

MOSFET N-CH 30V 80A TO263-3

Infineon Technologies

3,269
RFQ

Datasheet

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.3mOhm @ 80A, 10V 2.2V @ 45µA 75 nC @ 10 V ±16V 5100 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
RJK2017DPP-B1#T2F Renesas Electronics Corporation electronic component

RJK2017DPP-B1#T2F

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

8,000
RFQ

Datasheet

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GT180P08D5 Goford Semiconductor electronic component

GT180P08D5

MOSFET P-CH 80V 78A 178W 18M(MAX

Goford Semiconductor

5,000
RFQ

-

SGT 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 80 V 78A (Tc) 10V 18mOhm @ 20A, 10V 2.5V @ 250µA 62.1 nC @ 10 V 20V 6998 pF @ 40 V - 178W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
STL50NH3LL STMicroelectronics electronic component

STL50NH3LL

MOSFET N-CH 30V 27A POWERFLAT

STMicroelectronics

1,441
RFQ

Datasheet

STripFET™ 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 27A (Tc) 4.5V, 10V 13mOhm @ 6.5A, 10V 1V @ 250µA 12 nC @ 4.5 V ±16V 965 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (5x6)
RJK2017DPP-90#T2 Renesas Electronics Corporation electronic component

RJK2017DPP-90#T2

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,367
RFQ

Datasheet

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AUIRF4905L International Rectifier electronic component

AUIRF4905L

AUTOMOTIVE HEXFET P CHANNEL

International Rectifier

1,000
RFQ

Datasheet

HEXFET® TO-262 Bulk Active P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262
IPP072N10N3G UMW electronic component

IPP072N10N3G

MOSFET N-CH 100V 80A TO220

UMW

976
RFQ

Datasheet

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STP110N8F6 STMicroelectronics electronic component

STP110N8F6

MOSFET N-CH 80V 110A TO220

STMicroelectronics

695
RFQ

Datasheet

STripFET™ F6 TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 110A (Tc) 10V 6.5mOhm @ 55A, 10V 4.5V @ 250µA 150 nC @ 10 V ±20V 9130 pF @ 40 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
GT52N10D5 Goford Semiconductor electronic component

GT52N10D5

N100V,RD(MAX)<7.5M@10V,RD(MAX)<1

Goford Semiconductor

16,203
RFQ

Datasheet

SGT 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 71A (Tc) 4.5V, 10V 7.5mOhm @ 50A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2870 pF @ 50 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
2SK2934-92-E Renesas Electronics Corporation electronic component

2SK2934-92-E

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

15,524
RFQ

Datasheet

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FETs, MOSFETs Electronic Components

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