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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FDD5690 onsemi electronic component

FDD5690

MOSFET N-CH 60V 30A TO252

onsemi

1,812
RFQ

Datasheet

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 6V, 10V 27mOhm @ 9A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 1110 pF @ 25 V - 3.2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
G080N10T Goford Semiconductor electronic component

G080N10T

MOSFET N-CH 100V 180A TO-220

Goford Semiconductor

114
RFQ

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 7.5mOhm @ 30A, 10V 2.5V @ 250µA 107 nC @ 4.5 V ±20V 13912 pF @ 50 V - 370W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
TSM60NB900CP ROG Taiwan Semiconductor Corporation electronic component

TSM60NB900CP ROG

MOSFET N-CHANNEL 600V 4A TO252

Taiwan Semiconductor Corporation

1,975
RFQ

-

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 900mOhm @ 1.2A, 10V 4V @ 250µA 9.6 nC @ 10 V ±30V 315 pF @ 100 V - 36.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
IRF9233 International Rectifier electronic component

IRF9233

MOSFET P-CH 150V 5.5A TO204AE

International Rectifier

301
RFQ

Datasheet

HEXFET® TO-204AE Bulk Active P-Channel MOSFET (Metal Oxide) 150 V 5.5A - - - - - - - 75W - - - Through Hole TO-204AE
IRF225 International Rectifier electronic component

IRF225

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier

288
RFQ

Datasheet

- TO-204AA, TO-3 Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 3.3A - - - - - - - 40W - - - Through Hole TO-204AA (TO-3)
STL16N65M5 STMicroelectronics electronic component

STL16N65M5

MOSFET N-CH 650V 12A PWRFLAT HV

STMicroelectronics

2,402
RFQ

Datasheet

MDmesh™ V 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 299mOhm @ 6A, 10V 5V @ 250µA 31 nC @ 10 V ±25V 1250 pF @ 100 V - 3W (Ta), 90W (Tc) 150°C (TJ) - - Surface Mount PowerFlat™ (8x8) HV
IPI100N12S305AKSA1 Infineon Technologies electronic component

IPI100N12S305AKSA1

MOSFET N-CHANNEL_100+

Infineon Technologies

3,907
RFQ

Datasheet

OptiMOS™ T TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 120 V 100A (Tc) 10V 5.1mOhm @ 100A, 10V 4V @ 240µA 185 nC @ 10 V ±20V 11570 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
FDS2170N7 Fairchild Semiconductor electronic component

FDS2170N7

MOSFET N-CH 200V 3A 8SOIC

Fairchild Semiconductor

16,104
RFQ

Datasheet

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3A (Ta) 10V 128mOhm @ 3A, 10V 4.5V @ 250µA 36 nC @ 10 V ±20V 1292 pF @ 100 V - 3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
FDS2070N7 Fairchild Semiconductor electronic component

FDS2070N7

MOSFET N-CH 150V 4.1A 8SO

Fairchild Semiconductor

12,739
RFQ

Datasheet

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 150 V 4.1A (Ta) 6V, 10V 78mOhm @ 4.1A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 1884 pF @ 75 V - 3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
FDMC86183 onsemi electronic component

FDMC86183

MOSFET N-CH 100V 47A 8PQFN

onsemi

8,456
RFQ

Datasheet

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 6V, 10V 12.8mOhm @ 16A, 10V 4V @ 90µA 21 nC @ 10 V ±20V 1515 pF @ 50 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (3.3x3.3), Power33
FDMS7580 onsemi electronic component

FDMS7580

MOSFET N-CH 25V 15A/29A 8PQFN

onsemi

2,485
RFQ

Datasheet

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 15A (Ta), 29A (Tc) 4.5V, 10V 7.5mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 10 V ±20V 1190 pF @ 13 V - 2.5W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
IRFR224PBF Vishay Siliconix electronic component

IRFR224PBF

MOSFET N-CH 250V 3.8A DPAK

Vishay Siliconix

2,142
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3.8A (Tc) 10V 1.1Ohm @ 2.3A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFD310PBF Vishay Siliconix electronic component

IRFD310PBF

MOSFET N-CH 400V 350MA 4DIP

Vishay Siliconix

2,012
RFQ

Datasheet

- 4-DIP (0.300", 7.62mm) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 400 V 350mA (Ta) 10V 3.6Ohm @ 210mA, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
GSJH65R290 Good-Ark Semiconductor electronic component

GSJH65R290

MOSFET, N-CH, SINGLE, 15.00A, 65

Good-Ark Semiconductor

1,996
RFQ

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 290mOhm @ 7A, 10V 4V @ 250µA 26 nC @ 10 V ±30V 918 pF @ 100 V - 120W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
GT080N10K Goford Semiconductor electronic component

GT080N10K

N100V, 75A,RD<8M@10V,VTH1V~3V, T

Goford Semiconductor

1,687
RFQ

Datasheet

SGT TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 65A (Tc) 4.5V, 10V 8mOhm @ 50A, 10V 2.5V @ 250µA 43 nC @ 10 V ±20V 2530 pF @ 50 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
FDS3170N7 Fairchild Semiconductor electronic component

FDS3170N7

MOSFET N-CH 100V 6.7A 8SO

Fairchild Semiconductor

179
RFQ

Datasheet

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 6.7A (Ta) 6V, 10V 26mOhm @ 6.7A, 10V 4V @ 250µA 77 nC @ 10 V ±20V 2714 pF @ 50 V - 3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
2SJ143(04)-S6-AZ Renesas Electronics Corporation electronic component

2SJ143(04)-S6-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

5,024
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
GT011N03D5E Goford Semiconductor electronic component

GT011N03D5E

MOSFET N-CH ESD 30V 209A DFN5*6-

Goford Semiconductor

4,977
RFQ

Datasheet

SGT 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 209A (Tc) 4.5V, 10V 0.95mOhm @ 10A, 10V 2.5V @ 250µA 98 nC @ 10 V ±20V 5950 pF @ 15 V - 89W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
MSJP11N65A-BP Micro Commercial Co electronic component

MSJP11N65A-BP

N-CHANNEL MOSFET,TO-220

Micro Commercial Co

4,971
RFQ

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11A 10V 380mOhm @ 3.2A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 763 pF @ 25 V - 83.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
2SJ143-AZ Renesas Electronics Corporation electronic component

2SJ143-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

2,440
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
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FETs, MOSFETs Electronic Components

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