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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
MCU15N10-TP Micro Commercial Co electronic component

MCU15N10-TP

MOSFET N-CH

Micro Commercial Co

7,853
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 10V 100mOhm @ 5A, 10V 2.9V @ 250µA 11 nC @ 10 V ±20V 612 pF @ 50 V - 28W -55°C ~ 175°C (TJ) - - Surface Mount DPAK
MCU02N80-TP Micro Commercial Co electronic component

MCU02N80-TP

MOSFET N-CH

Micro Commercial Co

3,890
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2.4A 10V 6.3Ohm @ 1.2A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 550 pF @ 25 V - - -55°C ~ 150°C (TJ) - - Surface Mount DPAK
MCQ4407A-TP Micro Commercial Co electronic component

MCQ4407A-TP

MOSFET P-CH

Micro Commercial Co

9,889
RFQ

Datasheet

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 12A 4.5V, 10V 15mOhm @ 10A, 10V 3V @ 250µA 24 nC @ 10 V ±20V 1750 pF @ 15 V - 3W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
MCP20N70-BP Micro Commercial Co electronic component

MCP20N70-BP

MOSFET N-CH

Micro Commercial Co

3,775
RFQ

Datasheet

- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 700 V 20A 10V 210mOhm @ 10A, 10V 4V @ 250µA 46 nC @ 10 V ±30V 2328 pF @ 50 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
MCP04N80-BP Micro Commercial Co electronic component

MCP04N80-BP

MOSFET N-CH

Micro Commercial Co

3,209
RFQ

Datasheet

- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4A 10V 1.2Ohm @ 2A, 10V 4.5V @ 250µA 13 nC @ 10 V ±30V 598 pF @ 50 V - 63W -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
MCU40P04-TP Micro Commercial Co electronic component

MCU40P04-TP

MOSFET P-CH

Micro Commercial Co

2,723
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 40 V 40A 10V 14mOhm @ 12A, 10V 3V @ 250µA 72 nC @ 10 V ±20V 2960 pF @ 20 V - 1.25W -55°C ~ 150°C (TJ) - - Surface Mount DPAK
LSIC1MO120G0120 Littelfuse Inc. electronic component

LSIC1MO120G0120

MOSFET SIC 1200V 18A TO247-4L

Littelfuse Inc.

9,987
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 27A (Tc) 20V 150mOhm @ 14A, 20V 4V @ 7mA 63 nC @ 20 V +22V, -6V 1130 pF @ 800 V - 156W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
LSIC1MO120G0080 Littelfuse Inc. electronic component

LSIC1MO120G0080

MOSFET SIC 1200V 25A TO247-4L

Littelfuse Inc.

7,766
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 39A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 92 nC @ 20 V +22V, -6V 170 pF @ 800 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
LSIC1MO120G0160 Littelfuse Inc. electronic component

LSIC1MO120G0160

MOSFET SIC 1200V 14A TO247-4L

Littelfuse Inc.

6,871
RFQ

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 20V 200mOhm @ 10A, 20V 4V @ 5mA 50 nC @ 20 V +22V, -6V 890 pF @ 800 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
AUXNSF2804STRL7P Infineon Technologies electronic component

AUXNSF2804STRL7P

MOSFET N-CH

Infineon Technologies

9,055
RFQ

-

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
TK430A60F,S4X(S Toshiba Semiconductor and Storage electronic component

TK430A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage

6,663
RFQ

Datasheet

U-MOSIX TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Ta) 10V 430mOhm @ 6.5A, 10V 4V @ 1.75mA 48 nC @ 10 V ±30V 1940 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK370A60F,S4X(S Toshiba Semiconductor and Storage electronic component

TK370A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage

4,152
RFQ

Datasheet

U-MOSIX TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 370mOhm @ 7.5A, 10V 4V @ 2.04mA 55 nC @ 10 V ±30V 2200 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
FQD9N25TM-SBEK002 onsemi electronic component

FQD9N25TM-SBEK002

MOSFET N-CH 250V 7.4A TO252AA

onsemi

6,769
RFQ

-

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250 V 7.4A (Tc) 10V 420mOhm @ 3.7A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 700 pF @ 25 V - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
FDP13AN06A0-SW82126 onsemi electronic component

FDP13AN06A0-SW82126

MOSFET N-CH 60V TO220-3

onsemi

3,392
RFQ

-

- TO-220-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10.9A (Ta), 62A (Tc) 6V, 10V 13.5mOhm @ 62A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 1350 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IGT40R070D1ATMA1 Infineon Technologies electronic component

IGT40R070D1ATMA1

GAN HV

Infineon Technologies

2,653
RFQ

Datasheet

CoolGaN™ 8-PowerSFN Bulk Discontinued at Digi-Key N-Channel GaNFET (Gallium Nitride) 400 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 382 pF @ 320 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-3
IGOT60R070D1E8220AUMA1 Infineon Technologies electronic component

IGOT60R070D1E8220AUMA1

GAN HV

Infineon Technologies

9,087
RFQ

-

CoolGaN™ 20-PowerSOIC (0.433", 11.00mm Width) Bulk Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-20-87
IGT60R070D1E8220ATMA1 Infineon Technologies electronic component

IGT60R070D1E8220ATMA1

GAN HV

Infineon Technologies

3,479
RFQ

-

CoolGaN™ 8-PowerSFN Bulk Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-3
IGO60R070D1E8220AUMA1 Infineon Technologies electronic component

IGO60R070D1E8220AUMA1

GAN HV

Infineon Technologies

4,134
RFQ

-

CoolGaN™ 20-PowerSOIC (0.433", 11.00mm Width) Bulk Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-20-85
PHM2230DLS/1X Nexperia USA Inc. electronic component

PHM2230DLS/1X

MOSFET

Nexperia USA Inc.

8,234
RFQ

-

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
PSMN0R7-25YLD/1X Nexperia USA Inc. electronic component

PSMN0R7-25YLD/1X

MOSFET

Nexperia USA Inc.

2,768
RFQ

Datasheet

- - Bulk Obsolete - - - - - - - - - - - - - - - - -

FETs, MOSFETs Electronic Components

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