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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TPCC8104,L1Q(CM Toshiba Semiconductor and Storage electronic component

TPCC8104,L1Q(CM

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage

5,080
RFQ

-

U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V 2V @ 500µA 58 nC @ 10 V +20V, -25V 2260 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TPCC8105,L1Q(CM Toshiba Semiconductor and Storage electronic component

TPCC8105,L1Q(CM

MOSFET P-CH 30V 23A 8TSON

Toshiba Semiconductor and Storage

2,514
RFQ

-

U-MOSVI 8-VDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 23A (Ta) 4.5V, 10V 7.8mOhm @ 11.5A, 10V 2V @ 500µA 76 nC @ 10 V +20V, -25V 3240 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.3x3.3)
TPCC8136.LQ Toshiba Semiconductor and Storage electronic component

TPCC8136.LQ

MOSFET P-CH 20V 9.4A 8TSON

Toshiba Semiconductor and Storage

3,328
RFQ

-

U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 9.4A (Ta) 1.8V, 4.5V 16mOhm @ 9.4A, 4.5V 1.2V @ 1mA 36 nC @ 5 V ±12V 2350 pF @ 10 V - 700mW (Ta), 18W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TK40J20D,S1F(O Toshiba Semiconductor and Storage electronic component

TK40J20D,S1F(O

MOSFET N-CH 200V 40A TO3P

Toshiba Semiconductor and Storage

7,100
RFQ

-

π-MOSVIII TO-3P-3, SC-65-3 Tray Active N-Channel MOSFET (Metal Oxide) 200 V 40A (Ta) 10V 44mOhm @ 20A, 10V 3.5V @ 1mA 100 nC @ 10 V ±20V 4300 pF @ 100 V - 260W (Tc) 150°C - - Through Hole TO-3P(N)
TPCC8104,L1Q Toshiba Semiconductor and Storage electronic component

TPCC8104,L1Q

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage

7,515
RFQ

-

U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V 2V @ 500µA 58 nC @ 10 V +20V, -25V 2260 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TK12J60W,S1VE(S Toshiba Semiconductor and Storage electronic component

TK12J60W,S1VE(S

MOSFET N-CH 600V 11.5A TO3P

Toshiba Semiconductor and Storage

6,276
RFQ

-

- TO-3P-3, SC-65-3 Tray Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 110W (Tc) 150°C - - Through Hole TO-3P(N)
TPCA8128,L1Q Toshiba Semiconductor and Storage electronic component

TPCA8128,L1Q

MOSFET P-CH 30V 34A 8SOP

Toshiba Semiconductor and Storage

6,835
RFQ

-

U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 34A (Ta) 4.5V, 10V 4.8mOhm @ 17A, 10V 2V @ 500µA 115 nC @ 10 V +20V, -25V 4800 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C - - Surface Mount 8-SOP Advance (5x5)
STP48N30M8 STMicroelectronics electronic component

STP48N30M8

MOSFET N-CH 300V TO220

STMicroelectronics

5,350
RFQ

-

- - Tube Obsolete - - - - - - - - - - - - - - - - -
STD18N65M2-EP STMicroelectronics electronic component

STD18N65M2-EP

MOSFET N-CH 650V 11A DPAK

STMicroelectronics

4,242
RFQ

-

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 375mOhm @ 5.5A, 10V 4V @ 250µA 14.4 nC @ 10 V ±25V 700 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
HAF1004-90STR-E Renesas Electronics Corporation electronic component

HAF1004-90STR-E

MOSFET P-CHANNEL 60V 5A DPAK

Renesas Electronics Corporation

3,162
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
FDS4141SN00136P onsemi electronic component

FDS4141SN00136P

MOSFET P-CH 40V 10.8A 8SOIC

onsemi

9,085
RFQ

-

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 10.8A (Ta) 4.5V, 10V 13mOhm @ 10.5A, 10V 3V @ 250µA 49 nC @ 10 V ±20V 2670 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
64-4095PBF Infineon Technologies electronic component

64-4095PBF

MOSFET N-CH SMD D2PAK

Infineon Technologies

9,941
RFQ

-

- - Tube Obsolete - - - - - - - - - - - - - - - - -
AUIRF2804L-313 Infineon Technologies electronic component

AUIRF2804L-313

MOSFET N-CH 40V 195A TO262

Infineon Technologies

4,448
RFQ

-

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2.3mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-262
AUIRFSL4010-306 Infineon Technologies electronic component

AUIRFSL4010-306

MOSFET N-CH 100V 180A TO262

Infineon Technologies

6,419
RFQ

-

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-262
AUIRFSL4010-313 Infineon Technologies electronic component

AUIRFSL4010-313

MOSFET N-CH 100V 180A TO262

Infineon Technologies

8,751
RFQ

-

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-262
PCF6294W onsemi electronic component

PCF6294W

IC MOSFET N-CH 30V

onsemi

6,498
RFQ

Datasheet

- - Bulk Obsolete - - - 13A (Tj) - - - - - - - - - - - - -
FDC658APG onsemi electronic component

FDC658APG

MOSFET P-CH 30V 4A SSOT6

onsemi

4,239
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
FDS9435ANBAD008 onsemi electronic component

FDS9435ANBAD008

MOSFET P-CH 30V 5.3A 8-SOIC

onsemi

7,701
RFQ

-

- - Tape & Reel (TR) Obsolete - - - 5.3A (Tj) - - - - - - - - - - - - -
FDC637ANNB5E023A onsemi electronic component

FDC637ANNB5E023A

MOSFET N-CH 20V 6.2A SSOT-6

onsemi

7,789
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
MCAC35N10Y-TP Micro Commercial Co electronic component

MCAC35N10Y-TP

MOSFET N-CH 100 35A DFN5060

Micro Commercial Co

5,841
RFQ

Datasheet

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35A (Tj) - 17.1mOhm @ 20A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 1223 pF @ 50 V - 35W -55°C ~ 150°C (TJ) - - Surface Mount DFN5060

FETs, MOSFETs Electronic Components

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