Hello! Welcome to Raywise Technologies Co.,Limited!

FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF151 Harris Corporation electronic component

IRF151

N-CHANNEL POWER MOSFET

Harris Corporation

5,800
RFQ

Datasheet

- TO-204AE Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Tc) 10V 55mOhm @ 20A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-204AE
IRF512 Harris Corporation electronic component

IRF512

N-CHANNEL POWER MOSFET

Harris Corporation

5,823
RFQ

Datasheet

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 4.9A (Tc) 10V 740mOhm @ 3.4A, 10V 4V @ 250µA 7.7 nC @ 10 V ±20V 135 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
BSP129L6327 Infineon Technologies electronic component

BSP129L6327

N-CHANNEL POWER MOSFET

Infineon Technologies

9,716
RFQ

Datasheet

SIPMOS® TO-261-4, TO-261AA Bulk Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 240 V 350mA (Ta) 0V, 10V 6Ohm @ 350mA, 10V 1V @ 108µA 5.7 nC @ 5 V ±20V 108 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4-21
PMN27XPE115 NXP USA Inc. electronic component

PMN27XPE115

SMALL SIGNAL FET

NXP USA Inc.

5,111
RFQ

Datasheet

- SC-74, SOT-457 Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 2.5V, 4.5V 30mOhm @ 3A, 4.5V 1.25V @ 250µA 22.5 nC @ 4.5 V ±12V 1770 pF @ 10 V - 530mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
PMN40UPEA115 NXP USA Inc. electronic component

PMN40UPEA115

P-CHANNEL MOSFET

NXP USA Inc.

2,407
RFQ

Datasheet

- SC-74, SOT-457 Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 4.7A (Ta) 1.8V, 4.5V 43mOhm @ 3A, 4.5V 950mV @ 250µA 23 nC @ 4.5 V ±8V 1820 pF @ 10 V - 500mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
PMV65XPEA215 NXP USA Inc. electronic component

PMV65XPEA215

P-CHANNEL MOSFET

NXP USA Inc.

2,701
RFQ

Datasheet

- TO-236-3, SC-59, SOT-23-3 Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 2.8A (Ta) 2.5V, 4.5V 78mOhm @ 2.8A, 4.5V 1.25V @ 250µA 9 nC @ 4.5 V ±12V 618 pF @ 10 V - 480mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-236AB
PMV50XP215 NXP USA Inc. electronic component

PMV50XP215

P-CHANNEL MOSFET

NXP USA Inc.

4,287
RFQ

Datasheet

- TO-236-3, SC-59, SOT-23-3 Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 3.6A (Ta) 1.5V, 4.5V 60mOhm @ 3.6A, 4.5V 900mV @ 250µA 12 nC @ 4.5 V ±12V 744 pF @ 20 V - 490mW (Ta), 4.63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-236AB
SSR4N60BTF Fairchild Semiconductor electronic component

SSR4N60BTF

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,332
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 2.8A (Tc) 10V 2.5Ohm @ 1.4A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 920 pF @ 25 V - 2.5W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
BSS84AKW-B115 NXP USA Inc. electronic component

BSS84AKW-B115

MOSFET P-CH

NXP USA Inc.

9,798
RFQ

Datasheet

- SC-70, SOT-323 Bulk Active P-Channel MOSFET (Metal Oxide) 50 V 150mA (Ta) 5V, 10V 7.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.35 nC @ 5 V ±20V 36 pF @ 25 V - 260mW (Ta), 830mW (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SC-70
SFS9Z14 Fairchild Semiconductor electronic component

SFS9Z14

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

4,997
RFQ

Datasheet

- TO-220-3 Full Pack Bulk Active P-Channel MOSFET (Metal Oxide) 60 V 5.3A (Tc) 10V 500mOhm @ 2.7A, 10V 4V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 24W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F
RFM12P08 Harris Corporation electronic component

RFM12P08

P-CHANNEL POWER MOSFET

Harris Corporation

9,592
RFQ

Datasheet

- TO-204AA, TO-3 Bulk Active P-Channel MOSFET (Metal Oxide) 80 V 12A (Tc) 10V 300mOhm @ 6A, 10V 4V @ 1mA - ±20V 1500 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3
PMZB600UNE315 NXP USA Inc. electronic component

PMZB600UNE315

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.

6,968
RFQ

Datasheet

- SC-101, SOT-883 Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 600mA (Ta) 1.2V, 4.5V 620mOhm @ 600mA, 4.5V 950mV @ 250µA 0.7 nC @ 4.5 V ±8V 21.3 pF @ 10 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN1006B-3
PMZB200UNE315 NXP USA Inc. electronic component

PMZB200UNE315

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.

4,063
RFQ

Datasheet

- SC-101, SOT-883 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 1.5V, 4.5V 250mOhm @ 1.4A, 4.5V 950mV @ 250µA 2.7 nC @ 4.5 V ±8V 89 pF @ 15 V - 350mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN1006B-3
2SJ199-T2-AZ Renesas Electronics Corporation electronic component

2SJ199-T2-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

5,412
RFQ

Datasheet

- TO-243AA Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) 4V, 10V 2Ohm @ 500mA, 10V 3V @ 1mA - ±20V 220 pF @ 10 V - 2W (Ta) 150°C - - Surface Mount SC-62
AONS66400 Alpha & Omega Semiconductor Inc. electronic component

AONS66400

MOSFET N-CH 40V 5X6 DFN

Alpha & Omega Semiconductor Inc.

4,874
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
AONS66450 Alpha & Omega Semiconductor Inc. electronic component

AONS66450

MOSFET N-CH 40V 5X6 DFN

Alpha & Omega Semiconductor Inc.

6,132
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
IRFC3205B Infineon Technologies electronic component

IRFC3205B

MOSFET 55V 110A DIE

Infineon Technologies

6,038
RFQ

-

HEXFET® Die Bulk Obsolete - MOSFET (Metal Oxide) 55 V 110A - 8mOhm @ 110A, 10V - - - - - - - - - Surface Mount Die
IRFC3415B Infineon Technologies electronic component

IRFC3415B

MOSFET 150V 43A DIE

Infineon Technologies

9,797
RFQ

-

HEXFET® Die Bulk Obsolete - MOSFET (Metal Oxide) 150 V 43A 10V 42mOhm @ 43A, 10V - - - - - - - - - Surface Mount Die
IRF6217TRPBF-1 Infineon Technologies electronic component

IRF6217TRPBF-1

MOSFET P-CH 150V 700MA 8SO

Infineon Technologies

4,871
RFQ

Datasheet

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 150 V 700mA (Ta) 10V 2.4Ohm @ 420mA, 10V 5V @ 250µA 9 nC @ 10 V ±20V 150 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRFC9130NB Infineon Technologies electronic component

IRFC9130NB

MOSFET 100V 14A DIE

Infineon Technologies

8,966
RFQ

-

HEXFET® Die Bulk Obsolete - MOSFET (Metal Oxide) 100 V 14A 10V 200mOhm @ 14A, 10V - - - - - - - - - Surface Mount Die

FETs, MOSFETs Electronic Components

Explore FETs, MOSFETs electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions