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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF630NL Infineon Technologies electronic component

IRF630NL

MOSFET N-CH 200V 9.3A TO262

Infineon Technologies

2,202
RFQ

Datasheet

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRFR3708 Infineon Technologies electronic component

IRFR3708

MOSFET N-CH 30V 61A DPAK

Infineon Technologies

9,096
RFQ

Datasheet

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 2.8V, 10V 12.5mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFU12N25D Infineon Technologies electronic component

IRFU12N25D

MOSFET N-CH 250V 14A IPAK

Infineon Technologies

4,875
RFQ

Datasheet

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 260mOhm @ 8.4A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 810 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
IRF3709L Infineon Technologies electronic component

IRF3709L

MOSFET N-CH 30V 90A TO262

Infineon Technologies

3,087
RFQ

Datasheet

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262
IRF3708L Infineon Technologies electronic component

IRF3708L

MOSFET N-CH 30V 62A TO262

Infineon Technologies

6,811
RFQ

Datasheet

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRF6601 Infineon Technologies electronic component

IRF6601

MOSFET N-CH 20V 26A DIRECTFET

Infineon Technologies

6,794
RFQ

Datasheet

HEXFET® DirectFET™ Isometric MT Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 26A (Ta), 85A (Tc) 4.5V, 10V 3.8mOhm @ 26A, 10V 2.2V @ 250µA 45 nC @ 4.5 V ±20V 3440 pF @ 15 V - 3.6W (Ta), 42W (Tc) - - - Surface Mount DIRECTFET™ MT
IRF6602 Infineon Technologies electronic component

IRF6602

MOSFET N-CH 20V 11A DIRECTFET

Infineon Technologies

3,539
RFQ

Datasheet

HEXFET® DirectFET™ Isometric MQ Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 11A (Ta), 48A (Tc) 4.5V, 10V 13mOhm @ 11A, 10V 2.3V @ 250µA 18 nC @ 4.5 V ±20V 1420 pF @ 10 V - 2.3W (Ta), 42W (Tc) - - - Surface Mount DIRECTFET™ MQ
IRF7453 Infineon Technologies electronic component

IRF7453

MOSFET N-CH 250V 2.2A 8SO

Infineon Technologies

3,313
RFQ

Datasheet

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Ta) 10V 230mOhm @ 1.3A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V 930 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRFPS43N50K Vishay Siliconix electronic component

IRFPS43N50K

MOSFET N-CH 500V 47A SUPER247

Vishay Siliconix

3,949
RFQ

-

- TO-274AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) 10V 90mOhm @ 28A, 10V 5V @ 250µA 350 nC @ 10 V ±30V 8310 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) - - Through Hole SUPER-247™ (TO-274AA)
IRFB18N50K Vishay Siliconix electronic component

IRFB18N50K

MOSFET N-CH 500V 17A TO220AB

Vishay Siliconix

7,808
RFQ

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 290mOhm @ 10A, 10V 5V @ 250µA 120 nC @ 10 V ±30V 2830 pF @ 25 V - 220W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFP23N50L Vishay Siliconix electronic component

IRFP23N50L

MOSFET N-CH 500V 23A TO247-3

Vishay Siliconix

9,193
RFQ

-

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 23A (Tc) 10V 235mOhm @ 14A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 3600 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRF7701 Infineon Technologies electronic component

IRF7701

MOSFET P-CH 12V 10A 8TSSOP

Infineon Technologies

4,540
RFQ

Datasheet

HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 12 V 10A (Tc) 1.8V, 4.5V 11mOhm @ 10A, 4.5V 1.2V @ 250µA 100 nC @ 4.5 V ±8V 5050 pF @ 10 V - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
IRF644NS Vishay Siliconix electronic component

IRF644NS

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix

9,121
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 240mOhm @ 8.4A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 1060 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF7707 Infineon Technologies electronic component

IRF7707

MOSFET P-CH 20V 7A 8TSSOP

Infineon Technologies

5,985
RFQ

Datasheet

HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7A (Ta) 2.5V, 4.5V 22mOhm @ 7A, 4.5V 1.2V @ 250µA 47 nC @ 4.5 V ±12V 2361 pF @ 15 V - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
IRF644N Vishay Siliconix electronic component

IRF644N

MOSFET N-CH 250V 14A TO220AB

Vishay Siliconix

8,563
RFQ

Datasheet

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 240mOhm @ 8.4A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 1060 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF1407STRR Infineon Technologies electronic component

IRF1407STRR

MOSFET N-CH 75V 100A D2PAK

Infineon Technologies

6,861
RFQ

Datasheet

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.8mOhm @ 78A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF630NSTRR Infineon Technologies electronic component

IRF630NSTRR

MOSFET N-CH 200V 9.3A D2PAK

Infineon Technologies

6,614
RFQ

Datasheet

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF644NSTRL Vishay Siliconix electronic component

IRF644NSTRL

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix

2,491
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 240mOhm @ 8.4A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 1060 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF644NSTRR Vishay Siliconix electronic component

IRF644NSTRR

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix

6,612
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 240mOhm @ 8.4A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 1060 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF7822TRL Vishay Siliconix electronic component

IRF7822TRL

MOSFET N-CH 30V 18A 8SO

Vishay Siliconix

7,587
RFQ

Datasheet

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V 6.5mOhm @ 15A, 4.5V 1V @ 250µA 60 nC @ 5 V ±12V 5500 pF @ 16 V - 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC

FETs, MOSFETs Electronic Components

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