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FET, MOSFET Arrays
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7328TRPBFMOSFET 2P-CH 30V 8A 8SO |
5,840 |
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Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 30V | 8A | 21mOhm @ 8A, 10V | 2.5V @ 250µA | 78nC @ 10V | 2675pF @ 25V | 2W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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HT8KB6TB1MOSFET 2N-CH 40V 8A 8HSMT |
6,890 |
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Datasheet |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 40V | 8A (Ta), 15A (Tc) | 17.2mOhm @ 8A, 10V | 2.5V @ 1mA | 10.6nC @ 10V | 530pF @ 20V | 2W (Ta), 14W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSMT (3.2x3) |
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IQE220N15NM5SCATMA1MOSFET 2N-CH 150V 8WHSON |
6,934 |
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Datasheet |
OptiMOS™ | 8-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 150V | - | - | - | - | - | - | - | - | - | Surface Mount | PG-WHSON-8-1 |
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FAM65CR51ADZ1MOSFET 2N-CH 650V 41A APMCD-B16 |
3,999 |
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Datasheet |
- | 12-SSIP Exposed Pad, Formed Leads | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 650V | 41A (Tc) | 51mOhm @ 20A, 10V | 5V @ 3.3mA | 123nC @ 10V | 4864pF @ 400V | 189W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | APMCD-B16 |
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NVXK2TR80WDTMOSFET 4N-CH 1200V 20A APM32 |
5,193 |
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Datasheet |
- | 32-PowerDIP Module (1.311", 33.30mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 20A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 82W (Tc) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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NVXK2VR80WXT2MOSFET 6N-CH 1200V 31A APM32 |
3,969 |
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Datasheet |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 31A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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NVXK2PR80WXT2MOSFET 4N-CH 1200V 31A APM32 |
2,267 |
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Datasheet |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 31A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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M1P45M12W2-1LAMOSFET 6N-CH 1200V ACEPACK DMT |
5,427 |
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Datasheet |
ECOPACK® | 32-PowerDIP Module (1.264", 32.10mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 30A (Tc) | 60.5mOhm @ 20A, 18V | 5V @ 1mA | 100nC @ 18V | 2086pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Through Hole | ACEPACK DMT-32 |
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NVXK2VR80WDT2MOSFET 6N-CH 1200V 20A APM32 |
2,337 |
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Datasheet |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 20A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 82W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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M1F80M12W2-1LAAUTOMOTIVE-GRADE ACEPACK DMT-32 |
9,403 |
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Datasheet |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NXH040F120MNF1PGMOSFET 4N-CH 1200V 30A 22PIM |
6,006 |
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Datasheet |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel | - | 1200V (1.2kV) | 30A (Tc) | 56mOhm @ 25A, 20V | 4.3V @ 10mA | 122.1nC @ 20V | 1505pF @ 800V | 74W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 22-PIM (33.8x42.5) |
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MSCSM120AM50T1AGMOSFET 2N-CH 1200V 55A |
7,822 |
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Datasheet |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 55A (Tc) | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137nC @ 20V | 1990pF @ 1000V | 245W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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NXH010P90MNF1PGMOSFET 2N-CH 900V 154A |
3,091 |
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Datasheet |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 900V | 154A (Tc) | 14mOhm @ 100A, 15V | 4.3V @ 40mA | 546.4nC @ 15V | 7007pF @ 450V | 328W (Tj) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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NXH010P120MNF1PGMOSFET 2N-CH 1200V 114A |
5,990 |
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Datasheet |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | 4707pF @ 800V | 250W (Tj) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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NXH020P120MNF1PGMOSFET 2N-CH 1200V 51A |
2,676 |
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Datasheet |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 1200V (1.2kV) | 51A (Tc) | 30mOhm @ 50A, 20V | 4.3V @ 20mA | 213.5nC @ 20V | 2420pF @ 800V | 119W (Tj) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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NXH006P120M3F2PTHGMOSFET 2N-CH 1200V 191A 36PIM |
1 |
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Datasheet |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 191A (Tc) | 8mOhm @ 100A, 18V | 4.4V @ 80mA | 622nC @ 20V | 11914pF @ 800V | 556W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 36-PIM (56.7x62.8) |
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A2U8M12W3-FCMOSFET 4N-CH 750V/1.2KV 180A |
9,411 |
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Datasheet |
ECOPACK® | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 750V, 1.2kV | 180A, 140A | 8mOhm @ 100A, 18V, 12.5mOhm @ 100A, 18V | 4.2V @ 2mA, 4V @ 2mA | 288nC @ 18V, 304nC @ 18V | 7660pF @ 400V, 7370pF @ 800V | - | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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CAB011A12GM3MOSFET 2N-CH 1200V 141A MODULE |
5,026 |
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Datasheet |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 141A (Tj) | 13.9mOhm @ 150A, 15V | 3.9V @ 34mA | 354nC @ 15V | 11000pF @ 1000V | 10mW | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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CAB008A12GM3TMOSFET 2N-CH 1200V 182A MODULE |
1 |
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Datasheet |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 182A (Tj) | 10.4mOhm @ 150A, 15V | 3.6V @ 46mA | 472nC @ 15V | 13600pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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BSM300D12P4G101MOSFET 2N-CH 1200V 291A MODULE |
2,899 |
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Datasheet |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 1200V (1.2kV) | 291A (Tc) | - | 4.8V @ 145.6mA | - | 30000pF @ 10V | 925W (Tc) | 175°C (TJ) | - | - | Chassis Mount | Module |
FET, MOSFET Arrays Electronic Components
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