How to request a quote for IXFB50N80Q2?

You can submit the RFQ form on this page with your required quantity, target price and contact information. The Raywise Technologies Co.,Limited team will respond with quotation and sourcing support.

Is IXFB50N80Q2 available in stock?

The displayed inventory is for reference because electronic component stock changes frequently. Please submit an inquiry to confirm the latest availability of IXFB50N80Q2.

IXYS IXFB50N80Q2

Q: Does Raywise Technologies Co.,Limited support BOM sourcing?

Yes. Raywise Technologies Co.,Limited supports BOM sourcing, component matching and RFQ service for electronic and communication components.

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Part No.:: IXFB50N80Q2

Manufacturer:: IXYS

Category:: FETs, MOSFETs

Package:: TO-264-3, TO-264AA

Datasheet:: IXFB50N80Q2.pdf

Description:: MOSFET N-CH 800V 50A PLUS264

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,318

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product Details

IXFB50N80Q2 is an electronic component from IXYS. Raywise Technologies Co.,Limited provides inventory inquiry, datasheet reference, RFQ support, BOM sourcing and component procurement service for this part number.

For the latest stock, lead time, price and alternative solutions of IXFB50N80Q2, please submit your inquiry with required quantity and target price. Our sourcing team will help confirm availability and provide quotation support.

IXFB50N80Q2 Specifications

Product attributes: Attribute value

Part Number:: IXFB50N80Q2

Manufacturer:: IXYS

Category:: FETs, MOSFETs

Package:: TO-264-3, TO-264AA

Stock:: 3,318

Series:: HiPerFET™, Q2 Class

Package/Case:: TO-264-3, TO-264AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 7200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1135W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PLUS264™

IXFB50N80Q2 FAQ

1. How to order IXFB50N80Q2 from Raywise Technologies Co.,Limited?

You can submit the RFQ form on this page with your required quantity, target price and contact information. Our sourcing team will confirm the latest stock, price and delivery options for IXFB50N80Q2.

2. How does Raywise Technologies Co.,Limited verify the quality of IXFB50N80Q2?

Raywise Technologies Co.,Limited works with reliable sourcing channels and applies strict supplier review and quality control processes. For critical orders, inspection and document support can be arranged according to your requirements.

3. Are the IXFB50N80Q2 price and inventory displayed accurate?

The price and inventory of electronic components may change frequently. The displayed stock is for reference only. Please submit an inquiry to confirm the latest availability, lead time and quotation.

4. Can I get the datasheet for IXFB50N80Q2?

If a datasheet is available, you can download it from the datasheet section on this page. You may also contact us for additional technical documents or component matching support.

5. Does Raywise Technologies Co.,Limited support BOM sourcing for IXFB50N80Q2?

Yes. You can send your BOM list to Raywise Technologies Co.,Limited. Our team can help with component sourcing, part number matching, alternative recommendations and quotation support.

6. What payment methods are accepted?

Common payment methods include Wire Transfer, PayPal, Credit Card, Western Union and other agreed payment options. Final payment terms will be confirmed with your quotation.

7. How is shipping arranged?

Shipping can be arranged through DHL, UPS, FedEx, TNT and other international logistics channels. Tracking information will be provided after shipment.