How to request a quote for FDME820NZT?

You can submit the RFQ form on this page with your required quantity, target price and contact information. The Raywise Technologies Co.,Limited team will respond with quotation and sourcing support.

Is FDME820NZT available in stock?

The displayed inventory is for reference because electronic component stock changes frequently. Please submit an inquiry to confirm the latest availability of FDME820NZT.

onsemi FDME820NZT

Q: Does Raywise Technologies Co.,Limited support BOM sourcing?

Yes. Raywise Technologies Co.,Limited supports BOM sourcing, component matching and RFQ service for electronic and communication components.

Compare

Part No.:: FDME820NZT

Manufacturer:: onsemi

Category:: FETs, MOSFETs

Package:: 6-PowerUFDFN

Datasheet:: FDME820NZT.pdf

Description:: MOSFET N-CH 20V 9A MICROFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:11,297

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product Details

FDME820NZT is an electronic component from onsemi. Raywise Technologies Co.,Limited provides inventory inquiry, datasheet reference, RFQ support, BOM sourcing and component procurement service for this part number.

For the latest stock, lead time, price and alternative solutions of FDME820NZT, please submit your inquiry with required quantity and target price. Our sourcing team will help confirm availability and provide quotation support.

FDME820NZT Specifications

Product attributes: Attribute value

Part Number:: FDME820NZT

Manufacturer:: onsemi

Category:: FETs, MOSFETs

Package:: 6-PowerUFDFN

Stock:: 11,297

Series:: PowerTrench®

Package/Case:: 6-PowerUFDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 9A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.5 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 865 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MicroFet 1.6x1.6 Thin

FDME820NZT FAQ

1. How to order FDME820NZT from Raywise Technologies Co.,Limited?

You can submit the RFQ form on this page with your required quantity, target price and contact information. Our sourcing team will confirm the latest stock, price and delivery options for FDME820NZT.

2. How does Raywise Technologies Co.,Limited verify the quality of FDME820NZT?

Raywise Technologies Co.,Limited works with reliable sourcing channels and applies strict supplier review and quality control processes. For critical orders, inspection and document support can be arranged according to your requirements.

3. Are the FDME820NZT price and inventory displayed accurate?

The price and inventory of electronic components may change frequently. The displayed stock is for reference only. Please submit an inquiry to confirm the latest availability, lead time and quotation.

4. Can I get the datasheet for FDME820NZT?

If a datasheet is available, you can download it from the datasheet section on this page. You may also contact us for additional technical documents or component matching support.

5. Does Raywise Technologies Co.,Limited support BOM sourcing for FDME820NZT?

Yes. You can send your BOM list to Raywise Technologies Co.,Limited. Our team can help with component sourcing, part number matching, alternative recommendations and quotation support.

6. What payment methods are accepted?

Common payment methods include Wire Transfer, PayPal, Credit Card, Western Union and other agreed payment options. Final payment terms will be confirmed with your quotation.

7. How is shipping arranged?

Shipping can be arranged through DHL, UPS, FedEx, TNT and other international logistics channels. Tracking information will be provided after shipment.