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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SCS306AMC7G Rohm Semiconductor electronic component

SCS306AMC7G

DIODE SIL CARB 650V 6A TO220FM

Rohm Semiconductor

 5,601
RFQ

Datasheet

 		- TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C
VS-82PF120 Vishay General Semiconductor - Diodes Division electronic component

VS-82PF120

DIODE GEN PURP 120V 80A DO203AB

Vishay General Semiconductor - Diodes Division

 2,448
RFQ

Datasheet

 		- DO-203AB, DO-5, Stud Bulk Active Standard 120 V 80A 1.4 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
DSS60-0045B IXYS electronic component

DSS60-0045B

DIODE SCHOTTKY 45V 60A TO247AD

IXYS

 9,440
RFQ

Datasheet

 		- TO-247-2 Tube Active Schottky 45 V 60A 600 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 45 V - - - Through Hole TO-247AD -55°C ~ 150°C
GE10MPS06E-TR GeneSiC Semiconductor electronic component

GE10MPS06E-TR

650V 10A TO-252-2 SIC SCHOTTKY M

GeneSiC Semiconductor

 5,854
RFQ

-

 MPS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 26A 1.35 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 650 V 466pF @ 1V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
SCS306AGC16 Rohm Semiconductor electronic component

SCS306AGC16

DIODE SIL CARB 650V 6A TO220ACP

Rohm Semiconductor

 6,950
RFQ

-

 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
VS-25F10 Vishay General Semiconductor - Diodes Division electronic component

VS-25F10

DIODE GEN PURP 100V 25A DO203AA

Vishay General Semiconductor - Diodes Division

 7,190
RFQ

Datasheet

 		- DO-203AA, DO-4, Stud Bulk Active Standard 100 V 25A 1.3 V @ 78 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 100 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
SCS308AMC7G Rohm Semiconductor electronic component

SCS308AMC7G

DIODE SIL CARB 650V 8A TO220FM

Rohm Semiconductor

 5,102
RFQ

Datasheet

 		- TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 400pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C
SCS308AGC16 Rohm Semiconductor electronic component

SCS308AGC16

DIODE SIL CARB 650V 8A TO220ACP

Rohm Semiconductor

 9,940
RFQ

-

 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 400pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
JAN1N4247 Microchip Technology electronic component

JAN1N4247

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

 14
RFQ

Datasheet

 		- A, Axial Bulk Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 600 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
SCS312AMC7G Rohm Semiconductor electronic component

SCS312AMC7G

DIODE SIL CARB 650V 12A TO220FM

Rohm Semiconductor

 8,395
RFQ

Datasheet

 		- TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.5 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 600pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C
SCS312AGC16 Rohm Semiconductor electronic component

SCS312AGC16

DIODE SIL CARB 650V 12A TO220ACP

Rohm Semiconductor

 2,156
RFQ

-

 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.5 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 600pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
GD30MPS06J-TR GeneSiC Semiconductor electronic component

GD30MPS06J-TR

650V 30A TO-263-7 SIC SCHOTTKY M

GeneSiC Semiconductor

 7,595
RFQ

Datasheet

 		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 51A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 650 V 735pF @ 1V, 1MHz - - Surface Mount TO-263-7 -55°C ~ 175°C
SCS315AMC7G Rohm Semiconductor electronic component

SCS315AMC7G

DIODE SIL CARB 650V 15A TO220FM

Rohm Semiconductor

 5,508
RFQ

Datasheet

 		- TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 15A 1.5 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 75 µA @ 650 V 750pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C
S5D10170A2 SMC Diode Solutions electronic component

S5D10170A2

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions

 2,756
RFQ

Datasheet

 		- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 44A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 978pF @ 0V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
SCS315AGC16 Rohm Semiconductor electronic component

SCS315AGC16

DIODE SIL CARB 650V 15A TO220ACP

Rohm Semiconductor

 3,256
RFQ

-

 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 15A 1.5 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 75 µA @ 650 V 750pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
PSC2065JJ Nexperia USA Inc. electronic component

PSC2065JJ

SIC DIODES AND FETS

Nexperia USA Inc.

 6,012
RFQ

Datasheet

 		- TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 650 V 680pF @ 1V, 1MHz - - Surface Mount D2PAK R2P -55°C ~ 175°C
JANTX1N5617US Microchip Technology electronic component

JANTX1N5617US

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

 2,292
RFQ

Datasheet

 		- SQ-MELF, A Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 µA @ 400 V 35pF @ 12V, 1MHz Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
VS-1N1190 Vishay General Semiconductor - Diodes Division electronic component

VS-1N1190

DIODE GEN PURP 600V 35A DO203AB

Vishay General Semiconductor - Diodes Division

 24
RFQ

Datasheet

 		- DO-203AB, DO-5, Stud Bulk Active Standard 600 V 35A 1.7 V @ 110 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
JANTX1N5615US Microchip Technology electronic component

JANTX1N5615US

DIODE GEN PURP 200V 1A A SQ-MELF

Microchip Technology

 7,427
RFQ

Datasheet

 		- SQ-MELF, A Bulk Active Standard 200 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns - - Military MIL-PRF-19500/429 Surface Mount A, SQ-MELF -65°C ~ 175°C
PSC2065LQ Nexperia USA Inc. electronic component

PSC2065LQ

SIC DIODES AND FETS

Nexperia USA Inc.

 4,257
RFQ

Datasheet

 		- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 650 V 680pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
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Single Diodes Electronic Components

Explore Single Diodes electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

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Q1: What products are included in Single Diodes?
This category includes related Single Diodes subcategories and electronic components from multiple manufacturers. Select a lower-level category to view available part numbers.

Q2: Can I request a quotation for Single Diodes components?
Yes. Send us the part numbers and required quantities, and our team will provide sourcing and quotation support.

Q3: Are datasheets and technical information available?
Yes. Datasheets and technical information are available on supported final product pages and product listings.

Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for Single Diodes and other electronic components.

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