Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
JANTX1N5552 DIODE GEN PURP 600V 5A AXIAL Microchip Technology	8,662	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	600 V	5A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 600 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
JANTX1N5622 DIODE GEN PURP 1KV 1A AXIAL Microchip Technology	4,981	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 1000 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
1N5619US DIODE GEN PURP 600V 1A D-5A Microchip Technology	4,921	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	600 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	500 nA @ 600 V	25pF @ 12V, 1MHz	-	-	Surface Mount	D-5A	-65°C ~ 175°C
VS-80PFR80 DIODE GP REV 800V 80A DO203AB Vishay General Semiconductor - Diodes Division	23	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	800 V	80A	1.4 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-55°C ~ 180°C
1N5811 DIODE GEN PURP 150V 3A B AXIAL Microchip Technology	9	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	150 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 150 V	60pF @ 10V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C
JANTX1N5806US DIODE GEN PURP 150V 1A D-5A Microchip Technology	7,663	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	150 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Surface Mount	D-5A	-65°C ~ 175°C
1N5811US/TR DIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology	2	RFQ	Datasheet	-	SQ-MELF, B	Tape & Reel (TR)	Active	Standard	150 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 150 V	60pF @ 10V, 1MHz	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
MSC030SDA070S DIODE SIL CARBIDE 700V 60A D3PAK Microchip Technology	24	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	SiC (Silicon Carbide) Schottky	700 V	60A	1.8 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 700 V	-	-	-	Surface Mount	D3PAK	-55°C ~ 175°C
IDWD15G120C5XKSA1 DIODE SIL CARB 1.2KV 49A TO247-2 Infineon Technologies	18	RFQ	Datasheet	CoolSiC™+	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	49A	1.65 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	124 µA @ 1200 V	1050pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-2	-55°C ~ 175°C
JANTX1N5420 DIODE GEN PURP 600V 3A B AXIAL Microchip Technology	5,551	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	600 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	1 µA @ 600 V	-	Military	MIL-PRF-19500/411	Through Hole	B, Axial	-65°C ~ 175°C
JANTXV1N5806US DIODE GEN PURP 150V 1A D-5A Microchip Technology	18	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	150 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Surface Mount	D-5A	-65°C ~ 175°C
VS-85HF20 DIODE GEN PURP 200V 85A DO203AB Vishay General Semiconductor - Diodes Division	4	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	200 V	85A	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 150°C
1N1186A DIODE GEN PURP 200V 40A DO5 GeneSiC Semiconductor	2,768	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	200 V	40A	1.1 V @ 40 A	-	-	10 µA @ 50 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 190°C
C6D05170H 5A 1700V SIC, SCHOTTKY DIODE Wolfspeed, Inc.	3,185	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	21A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	9 µA @ 1700 V	638pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
VS-16F120M DIODE GEN PURP 1.2KV 16A DO203AA Vishay General Semiconductor - Diodes Division	5	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Box	Active	Standard	1200 V	16A	1.23 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	29 ns	-	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
VS-40HF160 DIODE GEN PURP 1.6KV 40A DO203AB Vishay General Semiconductor - Diodes Division	1	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1600 V	40A	1.5 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	4.5 mA @ 1600 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 160°C
VS-85HF120 DIODE GEN PURP 1.2KV 85A DO203AB Vishay General Semiconductor - Diodes Division	5,622	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1200 V	85A	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 1200 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
VS-70HFR160 DIODE GEN PURP 1.6KV 70A DO203AB Vishay General Semiconductor - Diodes Division	8,556	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1600 V	70A	1.46 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	4.5 mA @ 1600 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 150°C
VS-70HFR120M DIODE GP REV 1.2KV 70A DO203AB Vishay General Semiconductor - Diodes Division	7,914	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1200 V	70A	1.35 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-40°C ~ 125°C
VS-123NQ100PBF DIODE SCHOTTKY 100V 120A D-67 Vishay General Semiconductor - Diodes Division	3,904	RFQ	Datasheet	-	D-67 HALF-PAK	Bulk	Active	Schottky	100 V	120A	910 mV @ 120 A	Fast Recovery =< 500ns, > 200mA (Io)	-	3 mA @ 100 V	2650pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-55°C ~ 175°C

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Single Diodes Electronic Components

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