Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
64440211AA INTAPAK BRIDGE BARRIER VS-644402 Vishay	532	RFQ	-	-	-	Box	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
BYR29X-600,127 DIODE GEN PURP 600V 8A TO220FP WeEn Semiconductors	1,000	RFQ	Datasheet	*	TO-220-2 Full Pack, Isolated Tab	Bulk	Active	Standard	600 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220FP	150°C (Max)
6A05 DIODE GEN PURP 1000V 6A R-6 Rectron USA	63	RFQ	Datasheet	-	R-6, Axial	Tape & Reel (TR)	Active	Standard	1000 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	300 nA @ 1000 V	150pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
RB521CS30L,315 DIODE SCHOTT 30V 100MA DFN1006-2 Nexperia USA Inc.	91	RFQ	Datasheet	-	SOD-882	Tape & Reel (TR)	Active	Schottky	30 V	100mA	350 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 10 V	8pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	DFN1006-2	150°C (Max)
PMEG6010CEJ,115 DIODE SCHOTTKY 60V 1A SOD323F Nexperia USA Inc.	48	RFQ	Datasheet	-	SC-90, SOD-323F	Tape & Reel (TR)	Active	Schottky	60 V	1A	660 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 60 V	68pF @ 1V, 1MHz	-	-	Surface Mount	SOD-323F	150°C (Max)
CUS520,H3F DIODE SCHOTTKY 30V 200MA USC Toshiba Semiconductor and Storage	3,086	RFQ	Datasheet	-	SC-76, SOD-323	Tape & Reel (TR)	Active	Schottky	30 V	200mA	280 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 30 V	17pF @ 0V, 1MHz	-	-	Surface Mount	USC	125°C (Max)
B1100-13-F DIODE SCHOTTKY 100V 1A SMA Diodes Incorporated	8,558	RFQ	Datasheet	-	DO-214AC, SMA	Tape & Reel (TR)	Active	Schottky	100 V	1A	790 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	80pF @ 4V, 1MHz	-	-	Surface Mount	SMA	-65°C ~ 150°C
PMEG10010ELR-QX DIODE SCHOTTKY 100V 1A SOD123W Nexperia USA Inc.	64	RFQ	-	-	SOD-123W	Tape & Reel (TR)	Active	Schottky	100 V	1A	770 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	3.7 ns	150 nA @ 100 V	70pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	SOD-123W	175°C
STPS3H100U DIODE SCHOTTKY 100V 3A SMB STMicroelectronics	7,534	RFQ	Datasheet	-	DO-214AA, SMB	Tape & Reel (TR)	Active	Schottky	100 V	3A	840 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 µA @ 100 V	-	-	-	Surface Mount	SMB	175°C (Max)
VS-HFA08TB60-M3 DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division	9,993	RFQ	Datasheet	HEXFRED®	TO-220-2	Tube	Active	Standard	600 V	8A	2.1 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	5 µA @ 600 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
SBM1060LSS_AY_00001 ULTRA LOW VF SCHOTTKY RECTIFIER Panjit International Inc.	9,365	RFQ	Datasheet	-	DO-201AD, Axial	Cut Tape (CT)	Active	Schottky	60 V	10A	540 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	220 µA @ 60 V	490pF @ 4V, 1MHz	-	-	Through Hole	DO-201AD	-55°C ~ 150°C
CMMR1U-06 TR PBFREE DIODE GEN PURP 600V 1A SOD123F Central Semiconductor Corp	6,847	RFQ	Datasheet	-	SOD-123F	Tape & Reel (TR)	Active	Standard	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	1 µA @ 600 V	9pF @ 4V, 1MHz	-	-	Surface Mount	SOD-123F	-65°C ~ 150°C
JANTX1N4148UR-1 DIODE GEN PURP 75V 200MA DO213AA Microchip Technology	4,141	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	75 V	200mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	20 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	Military	MIL-PRF-19500/116	Surface Mount	DO-213AA	-65°C ~ 175°C
VS-HFA16TB120-M3 DIODE GEN PURP 1.2KV 16A TO220AC Vishay General Semiconductor - Diodes Division	6,162	RFQ	Datasheet	HEXFRED®	TO-220-2	Tube	Active	Standard	1200 V	16A	3.93 V @ 32 A	Fast Recovery =< 500ns, > 200mA (Io)	135 ns	20 µA @ 1200 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
IDM02G120C5XTMA1 DIODE SIL CARB 1.2KV 2A TO252-2 Infineon Technologies	8,389	RFQ	Datasheet	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	2A	1.65 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	18 µA @ 1200 V	182pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO252-2	-55°C ~ 175°C
VS-60EPU06-N3 DIODE GP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division	5,459	RFQ	Datasheet	FRED Pt®	TO-247-2	Bulk	Active	Standard	600 V	60A	1.68 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	81 ns	50 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-55°C ~ 175°C
1N5614 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	8,128	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 200 V	-	-	-	Through Hole	A, Axial	-65°C ~ 200°C
JANTX1N5618 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	2	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 600 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
1N5806 DIODE GEN PURP 150V 1A A AXIAL Microchip Technology	6,263	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	150 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
1N5416 DIODE GEN PURP 100V 3A AXIAL Microchip Technology	4,931	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	100 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 100 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C

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Single Diodes Electronic Components

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