Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
TRS10H120H,S1Q 1200V 3RDGEN SIC-SBD 10A TO-247- Toshiba Semiconductor and Storage	60	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	38A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 1200 V	1148pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2L	175°C
1N6641US/TR SIGNAL OR COMPUTER DIODE Microchip Technology	70	RFQ	Datasheet	-	SQ-MELF, D	Tape & Reel (TR)	Active	Standard	50 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	100 nA @ 50 V	-	-	-	Surface Mount	D-5D	-65°C ~ 175°C
1N3595AUS/TR SIGNAL OR COMPUTER DIODE Microchip Technology	99	RFQ	-	-	DO-213AA	Tape & Reel (TR)	Active	Standard	125 V	150mA	920 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	2 nA @ 125 V	8pF @ 0V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
1N5418USE3/TR UFR,FRR Microchip Technology	70	RFQ	Datasheet	-	SQ-MELF, B	Tape & Reel (TR)	Active	Standard	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 400 V	-	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
STPSC20G12WL 1200 V, 20 A HIGH SURGE SILICON STMicroelectronics	96	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.5 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 1200 V	1548pF @ 0V, 1MHz	-	-	Through Hole	DO-247 LL	-55°C ~ 175°C
1N3595AUR-1/TR SIGNAL OR COMPUTER DIODE Microchip Technology	85	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Standard	125 V	150mA	920 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	2 nA @ 125 V	-	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
VS-95PF160 DIODE GEN PURP 1.6KV 95A DO203AB Vishay General Semiconductor - Diodes Division	54	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1600 V	95A	1.4 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-55°C ~ 180°C
1N5415US/TR UFR,FRR Microchip Technology	97	RFQ	Datasheet	-	SQ-MELF, B	Tape & Reel (TR)	Active	Standard	50 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 50 V	-	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
TRS15H120H,S1Q 1200V 3RDGEN SIC-SBD 15A TO-247- Toshiba Semiconductor and Storage	60	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	50A	1.45 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	1673pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2L	175°C
S3D60065H2 DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	100	RFQ	Datasheet	-	TO-247-2	Tube	Active	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247AC	-
VS-40HFR160 DIODE GEN PURP 1.6KV 40A DO203AB Vishay General Semiconductor - Diodes Division	37	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1600 V	40A	1.5 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	4.5 mA @ 1600 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 160°C
JANTXV1N5617 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	64	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	400 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 400 V	35pF @ 12V, 1MHz	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 175°C
ADS120J020C3-ASATH DIODE 1200V-20A TO220-2L, AUTOMO Luminus Devices Inc.	87	RFQ	-	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.35 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	-	Automotive	-	Through Hole	TO-220-2L	-55°C ~ 175°C
1N4946US/TR UFR,FRR Microchip Technology	98	RFQ	-	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
VS-70HFLR20S02 DIODE GP REV 200V 70A DO203AB Vishay General Semiconductor - Diodes Division	85	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	200 V	70A	1.85 V @ 219.8 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	100 µA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-40°C ~ 125°C
TRS20H120H,S1Q 1200V 3RDGEN SIC-SBD 20A TO-247- Toshiba Semiconductor and Storage	60	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	61A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 1200 V	2070pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2L	175°C
S5D25170F 1700V, 25A, ITO-220AC, SIC SCHOT SMC Diode Solutions	50	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
S5D25170A DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	28	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	66A	1.8 V @ 25 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1700 V	2400pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-41HF120 DIODE GEN PURP 1.2KV 40A DO203AB Vishay General Semiconductor - Diodes Division	98	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1200 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 1200 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
1N5820USE3/TR SMALL-SIGNAL SCHOTTKY Microchip Technology	135	RFQ	Datasheet	-	SQ-MELF, B	Tape & Reel (TR)	Active	Schottky	20 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	-	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 125°C

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Single Diodes Electronic Components

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