Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
S3D08065I DIODE SIL CARB 650V 27A TO220 SMC Diode Solutions	210	RFQ	Datasheet	-	TO-220-2 Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	27A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 650 V	650pF @ 0V, 1MHz	-	-	Through Hole	TO-220-Isolation	-55°C ~ 175°C
DSEI12-06AS-TUB DIODE GEN PURP 600V 14A TO263AA IXYS	49	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	600 V	14A	1.7 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	50 µA @ 600 V	-	-	-	Surface Mount	TO-263AA	-40°C ~ 150°C
VS-E5TX2106S2LHM3 20A, 600V, "X" SERIES GEN 5 FRED Vishay General Semiconductor - Diodes Division	830	RFQ	Datasheet	FRED Pt® G5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	20A	2.31 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	41 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
VS-E5TH2106S2LHM3 20A, 600V, "H" SERIES GEN 5 FRED Vishay General Semiconductor - Diodes Division	822	RFQ	Datasheet	FRED Pt® G5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	20A	1.68 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	47 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
DSEP12-12BZ-TUB DIODE GEN PURP 1.2KV 12A TO263HV IXYS	50	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	1200 V	12A	3.25 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	100 µA @ 1200 V	5pF @ 600V, 1MHz	-	-	Surface Mount	TO-263HV	-55°C ~ 175°C
S3D08065E DIODE SIL CARBIDE 650V 23A DPAK SMC Diode Solutions	100	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	23A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	51 µA @ 650 V	661pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
DHG20I1200PA DIODE GEN PURP 1.2KV 20A TO220AC IXYS	80	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1200 V	20A	2.7 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	30 µA @ 1200 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
VS-EPH6007L-N3 DIODE GEN PURP 650V 60A TO247AD Vishay General Semiconductor - Diodes Division	47	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	60A	2.2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	30 µA @ 650 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
VS-45EPS12LHM3 DIODE GEN PURP 1.2KV 45A TO247AD Vishay General Semiconductor - Diodes Division	65	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	45A	1.14 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-40°C ~ 150°C
S4D08120A DIODE SIL CARB 1.2KV 8A TO220AC SMC Diode Solutions	74	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	8A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	15 µA @ 1200 V	560pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
IDH06SG60CXKSA2 DIODE SIL CARB 600V 6A TO220-2-1 Infineon Technologies	37	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	6A	2.3 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	130pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
DSC02120 DIODE SIL CARB 1.2KV 2A TO220AC Diodes Incorporated	85	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	2A	1.7 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	128 µA @ 1200 V	130pF @ 100mV, 1MHz	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 175°C
DHG20I600PA DIODE GEN PURP 600V 20A TO220AC IXYS	47	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	20A	2.32 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	30 µA @ 600 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
DSEI25-06AS-TUB DIODE GEN PURP 600V 25A TO263 IXYS	100	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	600 V	25A	1.31 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 µA @ 600 V	20pF @ 400V, 1MHz	-	-	Surface Mount	TO-263 (D2PAK)	-40°C ~ 150°C
VS-25FR20 DIODE GEN PURP 200V 25A DO203AA Vishay General Semiconductor - Diodes Division	85	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	200 V	25A	1.3 V @ 78 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
DSEP30-06B DIODE GP 600V 30A ISOPLUS247 IXYS	29	RFQ	Datasheet	HiPerFRED™	ISOPLUS247™	Tube	Active	Standard	600 V	30A	2.51 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	250 µA @ 600 V	-	-	-	Through Hole	ISOPLUS247™ (BR)	-55°C ~ 175°C
S3D20065D1 DIODE SIL CARB 650V 20A TO247AD SMC Diode Solutions	50	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	1190pF @ 0V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
VS-25F20 DIODE GEN PURP 200V 25A DO203AA Vishay General Semiconductor - Diodes Division	88	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	200 V	25A	1.3 V @ 78 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
1N5818-1 DIODE SCHOTTKY 30V 1A DO41 Microchip Technology	91	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Bulk	Active	Schottky	30 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	-	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 150°C
VS-12FR80 DIODE GEN PURP 800V 12A DO203AA Vishay General Semiconductor - Diodes Division	98	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	800 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C

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Single Diodes Electronic Components

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