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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
DPF30I300PA IXYS electronic component

DPF30I300PA

DIODE GEN PURP 300V 30A TO220AC

IXYS

28
RFQ

Datasheet

HiPerFRED²™ TO-220-2 Tube Active Standard 300 V 30A 1.17 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 5 µA @ 300 V 42pF @ 150V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
STTH60R04W STMicroelectronics electronic component

STTH60R04W

DIODE GEN PURP 400V 60A DO247

STMicroelectronics

32
RFQ

Datasheet

- DO-247-2 (Straight Leads) Tube Active Standard 400 V 60A 1.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 60 µA @ 400 V - - - Through Hole DO-247 -40°C ~ 175°C
VS-16F20 Vishay General Semiconductor - Diodes Division electronic component

VS-16F20

DIODE GEN PURP 200V 16A DO203AA

Vishay General Semiconductor - Diodes Division

91
RFQ

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Standard 200 V 16A 1.23 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 200 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
DNA30ER2200IY IXYS electronic component

DNA30ER2200IY

DIODE GEN PURP 2.2KV 30A TO262

IXYS

42
RFQ

Datasheet

- TO-262-2, I2PAK Tube Active Standard 2200 V 30A 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Through Hole TO-262 (I2PAK) -55°C ~ 175°C
VS-16F40 Vishay General Semiconductor - Diodes Division electronic component

VS-16F40

DIODE GEN PURP 400V 16A DO203AA

Vishay General Semiconductor - Diodes Division

88
RFQ

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Standard 400 V 16A 1.23 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 400 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
VS-16FR10 Vishay General Semiconductor - Diodes Division electronic component

VS-16FR10

DIODE GEN PURP 100V 16A DO203AA

Vishay General Semiconductor - Diodes Division

31
RFQ

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 100 V 16A 1.23 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 100 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
VS-1N1204A Vishay General Semiconductor - Diodes Division electronic component

VS-1N1204A

DIODE GEN PURP 400V 12A DO203AA

Vishay General Semiconductor - Diodes Division

80
RFQ

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Standard 400 V 12A 1.35 V @ 12 A Standard Recovery >500ns, > 200mA (Io) - 1.5 mA @ 400 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 200°C
VS-12F20 Vishay General Semiconductor - Diodes Division electronic component

VS-12F20

DIODE GEN PURP 200V 12A DO203AA

Vishay General Semiconductor - Diodes Division

73
RFQ

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Standard 200 V 12A 1.26 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 200 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
STTH60L06W STMicroelectronics electronic component

STTH60L06W

DIODE GEN PURP 600V 60A DO247

STMicroelectronics

84
RFQ

Datasheet

- DO-247-2 (Straight Leads) Tube Active Standard 600 V 60A 1.55 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 105 ns 50 µA @ 600 V - - - Through Hole DO-247 175°C (Max)
DSA1-16D IXYS electronic component

DSA1-16D

DIODE AVALANCHE 1.6KV 2.3A

IXYS

84
RFQ

Datasheet

- Radial Box Active Avalanche 1600 V 2.3A 1.34 V @ 7 A Standard Recovery >500ns, > 200mA (Io) - 700 µA @ 1600 V - - - Through Hole - -40°C ~ 150°C
VS-12FR60 Vishay General Semiconductor - Diodes Division electronic component

VS-12FR60

DIODE GEN PURP 600V 12A DO203AA

Vishay General Semiconductor - Diodes Division

45
RFQ

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 600 V 12A 1.26 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 600 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
VS-12F60 Vishay General Semiconductor - Diodes Division electronic component

VS-12F60

DIODE GEN PURP 600V 12A DO203AA

Vishay General Semiconductor - Diodes Division

100
RFQ

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Standard 600 V 12A 1.26 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 600 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JANTX1N6638 Microchip Technology electronic component

JANTX1N6638

DIODE GEN PURP 125V 300MA D5B

Microchip Technology

80
RFQ

Datasheet

- D, Axial Bulk Active Standard 125 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 125 V - Military MIL-PRF-19500/578 Through Hole D-5D -65°C ~ 175°C
VS-25F40 Vishay General Semiconductor - Diodes Division electronic component

VS-25F40

DIODE GEN PURP 400V 25A DO203AA

Vishay General Semiconductor - Diodes Division

69
RFQ

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Standard 400 V 25A 1.3 V @ 78 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 400 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
VS-1N1206A Vishay General Semiconductor - Diodes Division electronic component

VS-1N1206A

DIODE GEN PURP 600V 12A DO203AA

Vishay General Semiconductor - Diodes Division

74
RFQ

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Standard 600 V 12A 1.35 V @ 12 A Standard Recovery >500ns, > 200mA (Io) - 1 mA @ 600 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 200°C
VS-16FR60 Vishay General Semiconductor - Diodes Division electronic component

VS-16FR60

DIODE GEN PURP 600V 16A DO203AA

Vishay General Semiconductor - Diodes Division

60
RFQ

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 600 V 16A 1.23 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 600 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JANTX1N5418 Microchip Technology electronic component

JANTX1N5418

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

75
RFQ

Datasheet

- B, Axial Bulk Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
VS-1N1183R Vishay General Semiconductor - Diodes Division electronic component

VS-1N1183R

DIODE GEN PURP 50V 35A DO203AB

Vishay General Semiconductor - Diodes Division

63
RFQ

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 50 V 35A 1.7 V @ 110 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 50 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
TRS12A65F,S1Q Toshiba Semiconductor and Storage electronic component

TRS12A65F,S1Q

DIODE SIL CARB 650V 12A TO220F

Toshiba Semiconductor and Storage

40
RFQ

Datasheet

- TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.6 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 44pF @ 650V, 1MHz - - Through Hole TO-220F-2L 175°C (Max)
VS-80PFR80W Vishay General Semiconductor - Diodes Division electronic component

VS-80PFR80W

DIODE GP REV 800V 80A DO203AB

Vishay General Semiconductor - Diodes Division

87
RFQ

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 800 V 80A 1.4 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
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Single Diodes Electronic Components

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Q1: What products are included in Single Diodes?
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