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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
FT2000KA Diotec Semiconductor electronic component

FT2000KA

DIODE GEN PURP 50V 20A TO220AC

Diotec Semiconductor

 98,840
RFQ

Datasheet

 		- TO-220-2 Tube Active Standard 50 V 20A 960 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 50 V - - - Through Hole TO-220AC -50°C ~ 150°C
SBX2550 Diotec Semiconductor electronic component

SBX2550

DIODE SCHOTTKY 50V 25A P600

Diotec Semiconductor

 500
RFQ

Datasheet

 		- P600, Axial Tape & Reel (TR) Active Schottky 50 V 25A 570 mV @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 50 V - - - Through Hole P600 -50°C ~ 150°C
KT20A150 Diotec Semiconductor electronic component

KT20A150

DIODE GEN PURP 150V 20A TO220AC

Diotec Semiconductor

 1,050
RFQ

Datasheet

 		- TO-220-2 Tube Active Standard 150 V 20A 980 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 5 µA @ 150 V - - - Through Hole TO-220AC -50°C ~ 175°C
KT20K150 Diotec Semiconductor electronic component

KT20K150

DIODE GEN PURP 150V 20A TO220AC

Diotec Semiconductor

 433
RFQ

Datasheet

 		- TO-220-2 Tube Active Standard 150 V 20A 980 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 5 µA @ 150 V - - - Through Hole TO-220AC -50°C ~ 175°C
ADC6D10065G Analog Power Inc. electronic component

ADC6D10065G

DIODE SIL SIC 650V 36A TO263-2

Analog Power Inc.

 1,000
RFQ

Datasheet

 		WBG TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 36A 1.8 V @ 2 A No Recovery Time > 500mA (Io) - 2 µA @ 650 V 6.3pF @ 0V, 100kHz - - Surface Mount TO-263-2 -55°C ~ 175°C
IDH16S60CAKSA1 Infineon Technologies electronic component

IDH16S60CAKSA1

DIODE SIL CARB 600V 16A TO220-2

Infineon Technologies

 12,385
RFQ

Datasheet

 		CoolSiC™+ TO-220-2 Bulk Active SiC (Silicon Carbide) Schottky 600 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 650pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
QSD50HCS120U Quest Semi electronic component

QSD50HCS120U

1200v 50amp SiC Schottky Barrier

Quest Semi

 1,000
RFQ

-

 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 149A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 2380000pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220-2L -55°C ~ 175°C
NC1D120C20KTNG NovuSem electronic component

NC1D120C20KTNG

SiC Schottky 1200V 20A TO247- 2L

NovuSem

 500
RFQ

Datasheet

 		NC1D TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.6 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 1371pF @ 0V, 1MHz - - Through Hole TO-247-2L -55°C ~ 175°C
P2500Y Diotec Semiconductor electronic component

P2500Y

DIODE AVALANCHE 2KV 25A P600

Diotec Semiconductor

 8,000
RFQ

Datasheet

 		- P600, Axial Tape & Reel (TR) Active Avalanche 2000 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 2 V - - - Through Hole P600 -50°C ~ 175°C
ADC3D10065I Analog Power Inc. electronic component

ADC3D10065I

DIODE SIL SIC 1200V 10A TO220

Analog Power Inc.

 550
RFQ

Datasheet

 		- TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 2 µA @ 650 V 6.3pF @ 200V, 100kHz - - Through Hole TO-220F -40°C ~ 175°C
QSD10HCS120U Quest Semi electronic component

QSD10HCS120U

Schottky barrier diode 1200v 10a

Quest Semi

 1,600
RFQ

Datasheet

 		- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 37A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 1200 V 770pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
NC1D120C30KTNG NovuSem electronic component

NC1D120C30KTNG

SiC Schottky 1200V 30A TO247- 2L

NovuSem

 300
RFQ

Datasheet

 		NC1D TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 30A 1.6 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 85 µA @ 1200 V 2125pF @ 0.1V, 1MHz - - Through Hole TO-247-2L -55°C ~ 175°C
FFSH20120A onsemi electronic component

FFSH20120A

SILICON CARBIDE SCHOTTKY DIODE

onsemi

 900
RFQ

Datasheet

 		- TO-247-2 Bulk Active SiC (Silicon Carbide) Schottky 1200 V 30A 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1220pF @ 1V, 100KHz - - Through Hole TO-247-2 -
QSD25HCS170U Quest Semi electronic component

QSD25HCS170U

1700v 25amp SiC Schottky Barrier

Quest Semi

 1,233
RFQ

-

 - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 94A 1.9 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1700 V 2822pF @ 0V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
NC1D120C40GTDN NextGen Components electronic component

NC1D120C40GTDN

SiC Diode 1200V 40A Dual Die TO2

NextGen Components

 300
RFQ

Datasheet

 		NC1D TO-247-3L Tube Active SiC (Silicon Carbide) Schottky 1.2 kV 40A 1.6 V @ 10 A No Recovery Time > 500mA (Io) - 50 µA @ 1.2 kV 1371pF @ 100mV, 1MHz - - Through Hole TO-247-3L -55°C ~ 175°C
NC1D120C60GTDN NextGen Components electronic component

NC1D120C60GTDN

SiC Schottky 1200V 60A TO247- 3L

NextGen Components

 300
RFQ

Datasheet

 		- TO-247-3L Tube Active SiC (Silicon Carbide) Schottky - 60A - - - - 2125pF @ 0.1V, 1MHz - - Surface Mount TO-247-3L -55°C ~ 175°C
ADC4D10120E Analog Power Inc. electronic component

ADC4D10120E

DIODE SIL SIC 1200V 33A TO252-2

Analog Power Inc.

 2,500
RFQ

Datasheet

 		WBG TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 33A 1.8 V @ 10 A No Recovery Time > 500mA (Io) - 2 µA @ 1200 V 6.3pF @ 0V, 100kHz - - Surface Mount TO-252-2 -55°C ~ 175°C
ADC4D10120H Analog Power Inc. electronic component

ADC4D10120H

DIODE SIL SIC 1200V 31.5A TO247-

Analog Power Inc.

 950
RFQ

Datasheet

 		WBG TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 31.5A 1.8 V @ 2 A No Recovery Time > 500mA (Io) - 2 µA @ 1200 V 6.3pF @ 0V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
ADE4D20120G Analog Power Inc. electronic component

ADE4D20120G

DIODE SIL SIC 1200V 56A TO263-2

Analog Power Inc.

 600
RFQ

Datasheet

 		WBG TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 56A 1.85 V @ 20 A No Recovery Time > 500mA (Io) - 20 µA @ 1200 V 12pF @ 0V, 100kHz - - Surface Mount TO-263-2 -55°C ~ 175°C
ADC4D20120H Analog Power Inc. electronic component

ADC4D20120H

DIODE SIL SIC 1200V 54A TO247-2

Analog Power Inc.

 800
RFQ

Datasheet

 		WBG TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 54A 1.85 V @ 20 A No Recovery Time > 500mA (Io) - 10 µA @ 1200 V 12pF @ 0V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
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Single Diodes Electronic Components

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Q1: What products are included in Single Diodes?
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Q2: Can I request a quotation for Single Diodes components?
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Q3: Are datasheets and technical information available?
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Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for Single Diodes and other electronic components.

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