Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
CRU24730-600 SL RECTIFIER-ULTRA FAST <100 Central Semiconductor Corp	1,440	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MBR30170MFST3G DIODE SCHOTTKY 170V 30A 5DFN onsemi	5,000	RFQ	Datasheet	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	Schottky	170 V	30A	890 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 170 V	821pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (5x6) (8-SOFL)	-55°C ~ 175°C
TRS6V65H,LQ G3 SIC-SBD 650V 6A DFN8X8 Toshiba Semiconductor and Storage	4,803	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.35 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	392pF @ 1V, 1MHz	-	-	Surface Mount	4-DFN-EP (8x8)	175°C
FESF16JTHE3_A/P DIODE GEN PURP 600V 16A ITO220AC Vishay General Semiconductor - Diodes Division	1,995	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	16A	1.5 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	ITO-220AC	-65°C ~ 150°C
SF3006PT DIODE GEN PURP 400V 30A TO247AD Taiwan Semiconductor Corporation	806	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	400 V	30A	1.3 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	175pF @ 4V, 1MHz	-	-	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
YQ30NL10SETL TRENCH MOS STRUCTURE, 100V, 30A, Rohm Semiconductor	990	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	100 V	30A	860 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 100 V	-	-	-	Surface Mount	TO-263L	150°C
VS-EPH3007L-N3 DIODE GEN PURP 650V 30A TO247AD Vishay General Semiconductor - Diodes Division	390	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	30A	2.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	37 ns	30 µA @ 650 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
VS-EPU3006LHN3 DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division	499	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	30 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
TRS6E65H,S1Q G3 SIC-SBD 650V 6A TO-220-2L Toshiba Semiconductor and Storage	194	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.35 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	392pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	175°C
BSDH08G65E2 DIODE SCHOT SIC 650V 8A TO220-2 Bourns Inc.	3,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	267pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-25ETS08S-M3 DIODE GEN PURP 800V 25A TO263AB Vishay General Semiconductor - Diodes Division	7,049	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	800 V	25A	1.14 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 800 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-40°C ~ 150°C
SDS065J006D3-ISARH DIODE 650V-6A TO252-2L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan TO263	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	310pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2L	-55°C ~ 175°C
VS-20ETF06STRL-M3 DIODE GEN PURP 600V 20A TO263AB Vishay General Semiconductor - Diodes Division	6,202	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	20A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 600 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-40°C ~ 150°C
IDW50E60FKSA1 DIODE GEN PURP 600V 80A TO247-3 Infineon Technologies	240	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	80A	2 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	40 µA @ 600 V	-	-	-	Through Hole	PG-TO247-3	-40°C ~ 175°C
FFSB0665B DIODE SIL CARB 650V 8A D2PAK-2 onsemi	712	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	-	40 µA @ 650 V	259pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
SDS065J010N3-ISATH DIODE 650V-10A TO220N-2L Luminus Devices Inc.	290	RFQ	Datasheet	Sanan TO220N	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	26A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	556pF @ 0V, 1MHz	-	-	Through Hole	TO-220N-2L	-55°C ~ 175°C
BSDD06G65E2 DIODE SIC 650V 6A TO252 Bourns Inc.	4,963	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 650 V	201pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
SDS065J006C3-ISATH DIODE 650V-6A TO220-2L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	310pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
VS-8EWS12STRL-M3 DIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division	2,900	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	1200 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1200 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-55°C ~ 150°C
SDS065J006E3-ISARH DIODE 650V-6A TO263-2L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan TO263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	310pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2L	-55°C ~ 175°C

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Single Diodes Electronic Components

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