Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
NXPSC16650B6J DIODE SIL CARBIDE 650V 16A D2PAK WeEn Semiconductors	3,106	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	534pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C (Max)
WNSC04650T6J DIODE SIL CARBIDE 650V 4A 5DFN WeEn Semiconductors	4,442	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 650 V	141pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C (Max)
NXPSC12650B6J DIODE SIL CARBIDE 650V 12A D2PAK WeEn Semiconductors	2,892	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	380pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C (Max)
WNSC10650T6J DIODE SIL CARBIDE 650V 10A 5DFN WeEn Semiconductors	7,135	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	328pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C (Max)
WNSC08650T6J DIODE SIL CARBIDE 650V 8A 5DFN WeEn Semiconductors	8,999	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	267pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C (Max)
VS-C20CP07L-M3 DIODE SIL CARB 650V 10A TO220AC Vishay General Semiconductor - Diodes Division	5,592	RFQ	-	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.8 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	55 µA @ 650 V	430pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-C16CP07L-M3 DIODE SIL CARB 650V 16A TO220AC Vishay General Semiconductor - Diodes Division	6,963	RFQ	-	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	85 µA @ 650 V	320pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
SM4001-CT DIODE GP 50V 1A MELF DO-213AB Diotec Semiconductor	8,040	RFQ	Datasheet	-	DO-213AB, MELF	Strip	Active	Standard	50 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 50 V	-	-	-	Surface Mount	DO-213AB (MELF)	-50°C ~ 175°C
P2500X-CT DIODE AVALANCHE 1.8KV 25A P600 Diotec Semiconductor	9,312	RFQ	Datasheet	-	P600, Axial	Strip	Active	Avalanche	1800 V	25A	1.1 V @ 25 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 1.8 V	-	-	-	Through Hole	P600	-55°C ~ 175°C
1N4005GP-AQ-CT DIODE GEN PURP 600V 1A DO41 Diotec Semiconductor	4,442	RFQ	Datasheet	-	DO-204AC, DO-41, Axial	Strip	Active	Standard	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 600 V	-	-	-	Through Hole	DO-204AC (DO-41)	-50°C ~ 175°C
SM5406-CT DIODE GP 600V 3A MELF DO-213AB Diotec Semiconductor	8,271	RFQ	Datasheet	-	DO-213AB, MELF	Strip	Active	Standard	600 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 600 V	-	-	-	Surface Mount	DO-213AB (MELF)	-50°C ~ 175°C
SM4007-CT DIODE GP 1KV 1A MELF DO-213AB Diotec Semiconductor	2,031	RFQ	Datasheet	-	DO-213AB, MELF	Strip	Active	Standard	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 1 V	-	-	-	Surface Mount	DO-213AB (MELF)	-50°C ~ 175°C
BY550-50-CT DIODE GEN PURP 50V 5A DO201 Diotec Semiconductor	7,342	RFQ	Datasheet	-	DO-201AA, DO-27, Axial	Strip	Active	Standard	50 V	5A	1 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 50 V	-	-	-	Through Hole	DO-201	-50°C ~ 175°C
SM4003-CT DIODE GP 200V 1A MELF DO-213AB Diotec Semiconductor	4,618	RFQ	Datasheet	-	DO-213AB, MELF	Strip	Active	Standard	200 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 200 V	-	-	-	Surface Mount	DO-213AB (MELF)	-50°C ~ 175°C
P600G-CT DIODE GEN PURP 400V 6A P600 Diotec Semiconductor	7,066	RFQ	Datasheet	-	P600, Axial	Strip	Active	Standard	400 V	6A	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 400 V	-	-	-	Through Hole	P600	-50°C ~ 150°C
SM4002-CT DIODE GP 100V 1A MELF DO-213AB Diotec Semiconductor	3,475	RFQ	Datasheet	-	DO-213AB, MELF	Strip	Active	Standard	100 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 100 V	-	-	-	Surface Mount	DO-213AB (MELF)	-50°C ~ 175°C
GL34B-CT DIODE GP 100V 500MA DO213AA Diotec Semiconductor	2,178	RFQ	Datasheet	-	DO-213AA	Strip	Active	Standard	100 V	500mA	1.2 V @ 500 mA	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 100 V	-	-	-	Surface Mount	DO-213AA (MINIMELF)	-50°C ~ 175°C
P600B-CT DIODE GEN PURP 100V 6A P600 Diotec Semiconductor	6,465	RFQ	Datasheet	-	P600, Axial	Strip	Active	Standard	100 V	6A	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 100 V	-	-	-	Through Hole	P600	-50°C ~ 175°C
BY550-200-CT DIODE GEN PURP 200V 5A DO201 Diotec Semiconductor	7,792	RFQ	Datasheet	-	DO-201AA, DO-27, Axial	Strip	Active	Standard	200 V	5A	1 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 200 V	-	-	-	Through Hole	DO-201	-50°C ~ 175°C
BY133-CT DIODE GEN PURP 1.3KV 1A DO41 Diotec Semiconductor	9,567	RFQ	Datasheet	-	DO-204AC, DO-41, Axial	Strip	Active	Standard	1300 V	1A	1.3 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 1.3 V	-	-	-	Through Hole	DO-204AC (DO-41)	-50°C ~ 175°C

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Single Diodes Electronic Components

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