Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
MBRF10H35-E3/45 DIODE SCHOTTKY 35V 10A ITO220AC Vishay General Semiconductor - Diodes Division	5,595	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Obsolete	Schottky	35 V	10A	630 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 35 V	-	Automotive	AEC-Q101	Through Hole	ITO-220AC	-65°C ~ 175°C
MBRF10H50-E3/45 DIODE SCHOTTKY 50V 10A ITO220AC Vishay General Semiconductor - Diodes Division	3,916	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Obsolete	Schottky	50 V	10A	710 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 50 V	-	Automotive	AEC-Q101	Through Hole	ITO-220AC	-65°C ~ 175°C
MBRF16H35-E3/45 DIODE SCHOTTKY 35V 16A ITO220AC Vishay General Semiconductor - Diodes Division	8,796	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Obsolete	Schottky	35 V	16A	660 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 35 V	-	Automotive	AEC-Q101	Through Hole	ITO-220AC	-65°C ~ 175°C
MBRF16H50-E3/45 DIODE SCHOTTKY 50V 16A ITO220AC Vishay General Semiconductor - Diodes Division	6,232	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Obsolete	Schottky	50 V	16A	730 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 50 V	-	Automotive	AEC-Q101	Through Hole	ITO-220AC	-65°C ~ 175°C
SBLB1030-E3/45 DIODE SCHOTTKY 30V 10A TO263AB Vishay General Semiconductor - Diodes Division	2,771	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	Schottky	30 V	10A	600 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB	-40°C ~ 125°C
IDP2302XUMA1 AC/DC DIGITAL PLATFORM Infineon Technologies	9,163	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IDB15E60ATMA1 DIODE GP 600V 29.2A TO263-3-2 Infineon Technologies	3,500	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Standard	600 V	29.2A	2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	87 ns	50 µA @ 600 V	-	-	-	Surface Mount	PG-TO263-3-2	-40°C ~ 175°C
IDB10S60CATMA2 DIODE SIL CARB 600V 10A TO263-3 Infineon Technologies	4,014	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 600 V	480pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-3-2	-55°C ~ 175°C
CLH01(TE16L,Q) DIODE GEN PURP 200V 3A L-FLAT Toshiba Semiconductor and Storage	7,568	RFQ	Datasheet	-	L-FLAT™	Bulk	Obsolete	Standard	200 V	3A	980 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH03(TE16L,Q) DIODE GEN PURP 400V 3A L-FLAT Toshiba Semiconductor and Storage	7,801	RFQ	Datasheet	-	L-FLAT™	Bulk	Obsolete	Standard	400 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	-	-	-	-	Surface Mount	L-FLAT™ (4x5.5)	-
CLH05(T6L,NKOD,Q) DIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage	6,300	RFQ	Datasheet	-	L-FLAT™	Bulk	Obsolete	Standard	200 V	5A	980 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH05(TE16R,Q) DIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage	6,098	RFQ	Datasheet	-	L-FLAT™	Bulk	Obsolete	Standard	200 V	5A	980 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH05,LMBJQ(O DIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage	9,589	RFQ	Datasheet	-	L-FLAT™	Bulk	Obsolete	Standard	200 V	5A	980 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH06(TE16L,Q) DIODE GEN PURP 300V 5A L-FLAT Toshiba Semiconductor and Storage	3,653	RFQ	Datasheet	-	L-FLAT™	Bulk	Obsolete	Standard	300 V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	-	-	-	-	Surface Mount	L-FLAT™ (4x5.5)	-
CLH07(TE16L,NMB,Q) DIODE GEN PURP 400V 5A L-FLAT Toshiba Semiconductor and Storage	3,498	RFQ	Datasheet	-	L-FLAT™	Bulk	Obsolete	Standard	400 V	5A	1.8 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	-	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH07(TE16R,Q) DIODE GEN PURP 400V 5A L-FLAT Toshiba Semiconductor and Storage	4,531	RFQ	Datasheet	-	L-FLAT™	Bulk	Obsolete	Standard	400 V	5A	1.8 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	-	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLS01(T6LSONY,Q) DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage	2,161	RFQ	Datasheet	-	L-FLAT™	Bulk	Obsolete	Schottky	30 V	10A	470 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	530pF @ 10V, 1MHz	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS01(TE16L,PAS,Q) DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage	3,213	RFQ	Datasheet	-	L-FLAT™	Bulk	Obsolete	Schottky	30 V	10A	470 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	530pF @ 10V, 1MHz	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS01(TE16R,Q) DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage	7,583	RFQ	Datasheet	-	L-FLAT™	Bulk	Obsolete	Schottky	30 V	10A	470 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	530pF @ 10V, 1MHz	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS01,LFJFQ(O DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage	2,274	RFQ	Datasheet	-	L-FLAT™	Bulk	Obsolete	Schottky	30 V	10A	470 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	530pF @ 10V, 1MHz	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 125°C

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Single Diodes Electronic Components

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