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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
GB02SHT01-46 GeneSiC Semiconductor electronic component

GB02SHT01-46

DIODE SIL CARBIDE 100V 4A TO46

GeneSiC Semiconductor

6,492
RFQ

Datasheet

- TO-206AB, TO-46-3 Metal Can Bulk Obsolete SiC (Silicon Carbide) Schottky 100 V 4A 1.6 V @ 1 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 100 V 76pF @ 1V, 1MHz - - Through Hole TO-46 -55°C ~ 210°C
VS-1EFH01WHM3-18 Vishay General Semiconductor - Diodes Division electronic component

VS-1EFH01WHM3-18

DIODE GEN PURP 100V 1A DO219AB

Vishay General Semiconductor - Diodes Division

3,717
RFQ

Datasheet

FRED Pt® DO-219AB Tape & Reel (TR) Obsolete Standard 100 V 1A 930 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 16 ns 2 µA @ 100 V - Automotive AEC-Q101 Surface Mount DO-219AB (SMF) -65°C ~ 175°C
VS-1EFH01W-M3-18 Vishay General Semiconductor - Diodes Division electronic component

VS-1EFH01W-M3-18

DIODE GEN PURP 100V 1A DO219AB

Vishay General Semiconductor - Diodes Division

5,109
RFQ

Datasheet

FRED Pt® DO-219AB Tape & Reel (TR) Obsolete Standard 100 V 1A 930 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 16 ns 2 µA @ 100 V - - - Surface Mount DO-219AB (SMF) -65°C ~ 175°C
VS-1EFH02W-M3-18 Vishay General Semiconductor - Diodes Division electronic component

VS-1EFH02W-M3-18

DIODE GEN PURP 200V 1A DO219AB

Vishay General Semiconductor - Diodes Division

4,394
RFQ

Datasheet

FRED Pt® DO-219AB Tape & Reel (TR) Obsolete Standard 200 V 1A 930 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 16 ns 2 µA @ 200 V - - - Surface Mount DO-219AB (SMF) -65°C ~ 175°C
BYC8B-600PQP NXP USA Inc. electronic component

BYC8B-600PQP

DIODE GEN PURP 600V 8A D2PAK

NXP USA Inc.

4,645
RFQ

-

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 8A 3.4 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 18 ns 20 µA @ 600 V - - - Surface Mount D2PAK 175°C (Max)
GP2D050A120B SemiQ electronic component

GP2D050A120B

DIODE SIL CARB 1.2KV 50A TO247-2

SemiQ

8,045
RFQ

Datasheet

Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 50A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 3174pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
C2D05120E-TR Wolfspeed, Inc. electronic component

C2D05120E-TR

DIODE SIL CARB 1.2KV 17.5A TO252

Wolfspeed, Inc.

8,288
RFQ

-

Zero Recovery™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 17.5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 455pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
GP2D003A065A SemiQ electronic component

GP2D003A065A

DIODE SIL CARB 650V 3A TO220-2

SemiQ

7,306
RFQ

Datasheet

Amp+™ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 3A 1.65 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 158pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GP2D005A120A SemiQ electronic component

GP2D005A120A

DIODE SIL CARB 1.2KV 5A TO220-2

SemiQ

9,665
RFQ

Datasheet

Amp+™ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 317pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GP2D005A120C SemiQ electronic component

GP2D005A120C

DIODE SIL CARB 1.2KV 5A TO252-2L

SemiQ

8,410
RFQ

Datasheet

Amp+™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 317pF @ 1V, 1MHz - - Surface Mount TO-252-2L (DPAK) -55°C ~ 175°C
GP2D005A170B SemiQ electronic component

GP2D005A170B

DIODE SIL CARB 1.7KV 5A TO247-2

SemiQ

3,053
RFQ

Datasheet

Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1700 V 5A 1.75 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1700 V 406pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D006A065A SemiQ electronic component

GP2D006A065A

DIODE SIL CARB 650V 6A TO220-2

SemiQ

4,038
RFQ

Datasheet

Amp+™ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 6A 1.65 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 316pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GP2D006A065C SemiQ electronic component

GP2D006A065C

DIODE SIL CARB 650V 6A TO252-2L

SemiQ

9,030
RFQ

Datasheet

Amp+™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 6A 1.65 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 316pF @ 1V, 1MHz - - Surface Mount TO-252-2L (DPAK) -55°C ~ 175°C
GP2D010A120A SemiQ electronic component

GP2D010A120A

DIODE SIL CARB 1.2KV 10A TO220-2

SemiQ

7,035
RFQ

Datasheet

Amp+™ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 635pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GP2D010A120B SemiQ electronic component

GP2D010A120B

DIODE SIL CARB 1.2KV 10A TO247-2

SemiQ

6,089
RFQ

Datasheet

Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 635pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D010A120C SemiQ electronic component

GP2D010A120C

DIODE SIL CARB 1.2KV 10A TO252L

SemiQ

7,338
RFQ

Datasheet

Amp+™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 635pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
GP2D010A170B SemiQ electronic component

GP2D010A170B

DIODE SIL CARB 1.7KV 10A TO247-2

SemiQ

8,424
RFQ

-

Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1700 V 10A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 812pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D020A120B SemiQ electronic component

GP2D020A120B

DIODE SIL CARB 1.2KV 20A TO247-2

SemiQ

2,108
RFQ

Datasheet

Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 20A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 1270pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D020A170B SemiQ electronic component

GP2D020A170B

DIODE SIL CARB 1.7KV 20A TO247-2

SemiQ

7,267
RFQ

-

Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1700 V 20A 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1700 V 1624pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D030A120B SemiQ electronic component

GP2D030A120B

DIODE SIL CARB 1.2KV 30A TO247-2

SemiQ

4,014
RFQ

Datasheet

Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 30A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 1905pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C

Single Diodes Electronic Components

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