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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
APT100DL60BG Microchip Technology electronic component

APT100DL60BG

DIODE GEN PURP 600V 100A TO247

Microchip Technology

 5,848
RFQ

Datasheet

 		- TO-247-2 Tube Active Standard 600 V 100A 1.6 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - - - - - Through Hole TO-247 -55°C ~ 175°C
JANTXV1N6629US Microsemi Corporation electronic component

JANTXV1N6629US

DIODE GEN PURP 800V 1.4A D-5B

Microsemi Corporation

 3,276
RFQ

Datasheet

 		- SQ-MELF, E Bulk Active Standard 800 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 2 µA @ 800 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
DNA30E2200PC IXYS electronic component

DNA30E2200PC

DIODE GEN PURP 2.2KV 30A TO263AA

IXYS

 4,835
RFQ

-

 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 2200 V 30A 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Surface Mount TO-263AA -55°C ~ 175°C
DNA30EM2200PC IXYS electronic component

DNA30EM2200PC

DIODE GEN PURP 2.2KV 30A TO263AA

IXYS

 4,350
RFQ

Datasheet

 		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 2200 V 30A 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Surface Mount TO-263AA -55°C ~ 175°C
TRS6E65C,S1AQ Toshiba Semiconductor and Storage electronic component

TRS6E65C,S1AQ

DIODE SIL CARB 650V 6A TO220-2L

Toshiba Semiconductor and Storage

 5,245
RFQ

-

 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 650 V 35pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
TRS12E65C,S1Q Toshiba Semiconductor and Storage electronic component

TRS12E65C,S1Q

DIODE SIL CARB 650V 12A TO220-2L

Toshiba Semiconductor and Storage

 3,177
RFQ

-

 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 170 V 65pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
JANTX1N6629US Microsemi Corporation electronic component

JANTX1N6629US

DIODE GEN PURP 880V 1.4A D-5B

Microsemi Corporation

 6,147
RFQ

Datasheet

 		- SQ-MELF, E Bulk Active Standard 880 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 880 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
MSG105 Microsemi Corporation electronic component

MSG105

DIODE SCHOTTKY 50V 1A DO204AL

Microsemi Corporation

 3,206
RFQ

Datasheet

 		- DO-204AL, DO-41, Axial Bulk Active Schottky 50 V 1A 690 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 50 V - - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
MSG109 Microsemi Corporation electronic component

MSG109

DIODE SCHOTTKY 90V 1A DO204AL

Microsemi Corporation

 3,590
RFQ

Datasheet

 		- DO-204AL, DO-41, Axial Bulk Active Schottky 90 V 1A 810 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 90 V - - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
DB3Y501KEL Panasonic Electronic Components electronic component

DB3Y501KEL

DIODE SCHOTTKY 50V 200MA SOT23-3

Panasonic Electronic Components

 6,334
RFQ

Datasheet

 		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Schottky 50 V 200mA 550 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed 1.6 ns 200 µA @ 50 V 4pF @ 10V, 1MHz - - Surface Mount SOT-23-3 125°C (Max)
BAS16 Panasonic Electronic Components electronic component

BAS16

DIODE GEN PURP 80V 200MA SC59-3

Panasonic Electronic Components

 2,899
RFQ

Datasheet

 		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Standard 80 V 200mA 1.25 V @ 150 mA Small Signal =< 200mA (Io), Any Speed 3 ns 100 nA @ 80 V 1.2pF @ 0V, 1MHz - - Surface Mount SC-59-3 150°C (Max)
DB2U31600L Panasonic Electronic Components electronic component

DB2U31600L

DIODE SCHOTTKY 30V 100MA SOD923

Panasonic Electronic Components

 9,495
RFQ

Datasheet

 		- SOD-923 Tape & Reel (TR) Obsolete Schottky 30 V 100mA 550 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 800 ps 15 µA @ 30 V 2pF @ 10V, 1MHz - - Surface Mount SOD-923 125°C (Max)
1N4534 Microsemi Corporation electronic component

1N4534

DIODE GEN PURP 50V 150MA DO34

Microsemi Corporation

 4,779
RFQ

Datasheet

 		- DO-204AG, DO-34, Axial Bulk Active Standard 50 V 150mA 880 mV @ 20 mA Small Signal =< 200mA (Io), Any Speed 4 ns 50 nA @ 50 V - - - Through Hole DO-34 -65°C ~ 175°C
DSB1A20 Microchip Technology electronic component

DSB1A20

DIODE SCHOTTKY 20V 1A DO204AL

Microchip Technology

 9,411
RFQ

Datasheet

 		- DO-204AL, DO-41, Axial Bulk Active Schottky 20 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 20 V - - - Through Hole DO-204AL (DO-41) -
DSB1A30 Microchip Technology electronic component

DSB1A30

DIODE SCHOTTKY 30V 1A DO204AL

Microchip Technology

 6,717
RFQ

Datasheet

 		- DO-204AL, DO-41, Axial Bulk Active Schottky 30 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V - - - Through Hole DO-204AL (DO-41) -
DSB1A50 Microchip Technology electronic component

DSB1A50

DIODE SCHOTTKY 50V 1A DO204AL

Microchip Technology

 3,352
RFQ

Datasheet

 		- DO-204AL, DO-41, Axial Bulk Active Schottky 50 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 50 V - - - Through Hole DO-204AL (DO-41) -
DSB2810 Microchip Technology electronic component

DSB2810

DIODE SCHOTTKY 20V 75MA DO35

Microchip Technology

 2,609
RFQ

Datasheet

 		- DO-204AH, DO-35, Axial Bulk Active Schottky 20 V 75mA 410 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed - 100 nA @ 15 V 2pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
DSB3A20 Microchip Technology electronic component

DSB3A20

DIODE SCHOTTKY 20V 3A DO204AH

Microchip Technology

 8,989
RFQ

Datasheet

 		- DO-204AH, DO-35, Axial Bulk Active Schottky 20 V 3A 500 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 20 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 125°C
DSB5817 Microchip Technology electronic component

DSB5817

DIODE SCHOTTKY DO-41

Microchip Technology

 3,121
RFQ

-

 * - Bulk Active - - - - - - - - - - - - -
DSB5818 Microchip Technology electronic component

DSB5818

DIODE SCHOTTKY 30V 1A DO204AL

Microchip Technology

 2,637
RFQ

-

 - DO-204AL, DO-41, Axial Bulk Active Schottky 30 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 nA @ 30 V - - - Through Hole DO-204AL (DO-41) -
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Single Diodes Electronic Components

Explore Single Diodes electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions

Q1: What products are included in Single Diodes?
This category includes related Single Diodes subcategories and electronic components from multiple manufacturers. Select a lower-level category to view available part numbers.

Q2: Can I request a quotation for Single Diodes components?
Yes. Send us the part numbers and required quantities, and our team will provide sourcing and quotation support.

Q3: Are datasheets and technical information available?
Yes. Datasheets and technical information are available on supported final product pages and product listings.

Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for Single Diodes and other electronic components.

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