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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SB10-05A3-AT1 onsemi electronic component

SB10-05A3-AT1

DIODE SCHOTTKY 50V 1A DO41

onsemi

 5,897
RFQ

Datasheet

 		- DO-204AL, DO-41, Axial Tape & Reel (TR) Obsolete Schottky 50 V 1A 580 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 mA @ 50 V - - - Through Hole DO-41 125°C (Max)
SB10-05A3-BT onsemi electronic component

SB10-05A3-BT

DIODE SCHOTTKY 50V 1A DO41

onsemi

 9,599
RFQ

Datasheet

 		- DO-204AL, DO-41, Axial Tape & Reel (TR) Obsolete Schottky 50 V 1A 580 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 mA @ 50 V - - - Through Hole DO-41 125°C (Max)
SBE801-TL-H onsemi electronic component

SBE801-TL-H

DIODE SCHOTTKY 2A 30V CPH5

onsemi

 4,303
RFQ

-

 * - Tape & Reel (TR) Obsolete - - - - - - - - - - - - -
C3D1P7060Q Wolfspeed, Inc. electronic component

C3D1P7060Q

DIODE SIL CARB 600V 9.7A 10QFN

Wolfspeed, Inc.

 6,720
RFQ

Datasheet

 		Z-Rec® 10-PowerTQFN Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 600 V 9.7A 1.7 V @ 1.7 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 100pF @ 0V, 1MHz - - Surface Mount 10-Power QFN (3.3x3.3) -55°C ~ 160°C
GPP100MS-E3/54 Vishay General Semiconductor - Diodes Division electronic component

GPP100MS-E3/54

DIODE GEN PURP 1KV 10A P600

Vishay General Semiconductor - Diodes Division

 2,691
RFQ

Datasheet

 		- P600, Axial Tape & Reel (TR) Obsolete Standard 1000 V 10A 1.05 V @ 10 A Standard Recovery >500ns, > 200mA (Io) 5.5 µs 5 µA @ 1000 V 110pF @ 4V, 1MHz - - Through Hole P600 -55°C ~ 175°C
IDH10G65C5XKSA1 Infineon Technologies electronic component

IDH10G65C5XKSA1

DIODE SIL CARB 650V 10A TO220-2

Infineon Technologies

 7,297
RFQ

Datasheet

 		CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 340 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH05G65C5XKSA1 Infineon Technologies electronic component

IDH05G65C5XKSA1

DIODE SIL CARB 650V 5A TO220-2-2

Infineon Technologies

 2,413
RFQ

Datasheet

 		CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 170 µA @ 650 V 160pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH08G65C5XKSA1 Infineon Technologies electronic component

IDH08G65C5XKSA1

DIODE SIL CARB 650V 8A TO220-2-2

Infineon Technologies

 4,174
RFQ

Datasheet

 		CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 280 µA @ 650 V 250pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDW40G65C5FKSA1 Infineon Technologies electronic component

IDW40G65C5FKSA1

DIODE SIL CARB 650V 40A TO247-3

Infineon Technologies

 3,629
RFQ

Datasheet

 		CoolSiC™+ TO-247-3 Bulk Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 40A 1.7 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 1.4 mA @ 650 V 1140pF @ 1V, 1MHz - - Through Hole PG-TO247-3-1 -55°C ~ 175°C
IDH20G65C5XKSA1 Infineon Technologies electronic component

IDH20G65C5XKSA1

DIODE SIL CARB 650V 20A TO220-2

Infineon Technologies

 3,626
RFQ

Datasheet

 		CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 700 µA @ 650 V 590pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDW10G65C5FKSA1 Infineon Technologies electronic component

IDW10G65C5FKSA1

DIODE SIL CARB 650V 10A TO247-3

Infineon Technologies

 5,244
RFQ

Datasheet

 		CoolSiC™+ TO-247-3 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole PG-TO247-3-41 -55°C ~ 175°C
IDH03G65C5XKSA1 Infineon Technologies electronic component

IDH03G65C5XKSA1

DIODE SIL CARB 650V 3A TO220-2-2

Infineon Technologies

 5,340
RFQ

Datasheet

 		CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 3A 1.7 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 100pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH06G65C5XKSA1 Infineon Technologies electronic component

IDH06G65C5XKSA1

DIODE SIL CARB 650V 6A TO220-2-2

Infineon Technologies

 8,969
RFQ

Datasheet

 		CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 210 µA @ 650 V 190pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH04G65C5XKSA1 Infineon Technologies electronic component

IDH04G65C5XKSA1

DIODE SIL CARB 650V 4A TO220-2-2

Infineon Technologies

 2,826
RFQ

Datasheet

 		CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 140 µA @ 650 V 130pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDW12G65C5FKSA1 Infineon Technologies electronic component

IDW12G65C5FKSA1

DIODE SIL CARB 650V 12A TO247-3

Infineon Technologies

 9,222
RFQ

Datasheet

 		CoolSiC™+ TO-247-3 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 500 µA @ 650 V 360pF @ 1V, 1MHz - - Through Hole PG-TO247-3-41 -55°C ~ 175°C
IDW16G65C5FKSA1 Infineon Technologies electronic component

IDW16G65C5FKSA1

DIODE SIL CARB 650V 16A TO247-3

Infineon Technologies

 3,635
RFQ

Datasheet

 		CoolSiC™+ TO-247-3 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 600 µA @ 650 V 470pF @ 1V, 1MHz - - Through Hole PG-TO247-3-1 -55°C ~ 175°C
IDW20G65C5FKSA1 Infineon Technologies electronic component

IDW20G65C5FKSA1

DIODE SIL CARB 650V 20A TO247-3

Infineon Technologies

 4,510
RFQ

Datasheet

 		CoolSiC™+ TO-247-3 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 700 µA @ 650 V 590pF @ 1V, 1MHz - - Through Hole PG-TO247-3-1 -55°C ~ 175°C
IDH09G65C5XKSA1 Infineon Technologies electronic component

IDH09G65C5XKSA1

DIODE SIL CARB 650V 9A TO220-2-2

Infineon Technologies

 9,643
RFQ

Datasheet

 		CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 9A 1.7 V @ 9 A No Recovery Time > 500mA (Io) 0 ns 310 µA @ 650 V 270pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH16G65C5XKSA1 Infineon Technologies electronic component

IDH16G65C5XKSA1

DIODE SIL CARB 650V 16A TO220-2

Infineon Technologies

 8,688
RFQ

Datasheet

 		CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 550 µA @ 650 V 470pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
CD1206-S01575 Bourns Inc. electronic component

CD1206-S01575

DIODE GEN PURP 100V 150MA 1206

Bourns Inc.

 4,511
RFQ

-

 - 1206 (3216 Metric) Tape & Reel (TR) Obsolete Standard 100 V 150mA 1 V @ 50 mA Small Signal =< 200mA (Io), Any Speed 4 ns 2.5 µA @ 100 V 3pF @ 0V, 100MHz - - Surface Mount 1206 -55°C ~ 125°C
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Single Diodes Electronic Components

Explore Single Diodes electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

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Q1: What products are included in Single Diodes?
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Q2: Can I request a quotation for Single Diodes components?
Yes. Send us the part numbers and required quantities, and our team will provide sourcing and quotation support.

Q3: Are datasheets and technical information available?
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Q4: Do you support BOM sourcing?
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