Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
JANTXV1N5553US/TR DIODE GEN PURP 800V 3A B SQ-MELF Microchip Technology	4,155	RFQ	-	-	SQ-MELF, B	Tape & Reel (TR)	Active	Standard	800 V	3A	1.3 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	-	-	Military	MIL-PRF-19500/420	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
CDLL3595 SIGNAL OR COMPUTER DIODE Microchip Technology	6,572	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
241NQ045 DIODE SCHOTTKY 45V 240A D-67 Vishay General Semiconductor - Diodes Division	2,398	RFQ	Datasheet	-	D-67 HALF-PAK	Bulk	Obsolete	Schottky	45 V	240A	690 mV @ 240 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 mA @ 45 V	10300pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-
SIDC85D170HX1SA2 DIODE GP 1.7KV 150A WAFER Infineon Technologies	6,274	RFQ	Datasheet	-	Die	Bulk	Discontinued at Digi-Key	Standard	1700 V	150A	1.8 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 1700 V	-	-	-	Surface Mount	Sawn on foil	-55°C ~ 150°C
1N6074US/TR DIODE GEN PURP 100V 3A D-5A Microchip Technology	6,174	RFQ	-	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	100 V	3A	2.04 V @ 9.4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 100 V	-	-	-	Surface Mount	D-5A	-65°C ~ 155°C
JAN1N5811URS/TR DIODE GP 150V 3A SQ-MELF B Microchip Technology	2,049	RFQ	-	-	SQ-MELF, B	Tape & Reel (TR)	Active	Standard	150 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 150 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
JAN1N5809URS/TR UFR,FRR Microchip Technology	5,724	RFQ	Datasheet	-	SQ-MELF, B	Tape & Reel (TR)	Active	Standard	100 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
JAN1N5807URS/TR UFR,FRR Microchip Technology	4,475	RFQ	Datasheet	-	SQ-MELF, B	Tape & Reel (TR)	Active	Standard	50 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
243NQ100 DIODE SCHOTTKY 100V 240A D-67 Vishay General Semiconductor - Diodes Division	3,203	RFQ	Datasheet	-	D-67 HALF-PAK	Bulk	Obsolete	Schottky	100 V	240A	860 mV @ 240 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6 mA @ 100 V	5500pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-
1N6642UB/TR DIODE GEN PURP UB Microchip Technology	8,591	RFQ	-	-	4-SMD, No Lead	Tape & Reel (TR)	Active	Standard	-	-	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	-	5pF @ 0V, 1MHz	-	-	Surface Mount	UB	-
1N6073US DIODE GEN PURP 50V 3A D-5A Microchip Technology	7,348	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	50 V	3A	2.04 V @ 9.4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 50 V	-	-	-	Surface Mount	D-5A	-65°C ~ 155°C
1N6075US DIODE GEN PURP 150V 3A D-5A Microchip Technology	8,965	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	150 V	3A	2.04 V @ 9.4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 150 V	-	-	-	Surface Mount	D-5A	-65°C ~ 155°C
1N3085 DIODE GEN PURP 100V 150A DO205AC Vishay General Semiconductor - Diodes Division	4,783	RFQ	Datasheet	-	DO-205AC, DO-30, Stud	Bulk	Obsolete	Standard	100 V	150A	1.2 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	25 mA @ 100 V	-	-	-	Stud Mount	DO-205AC (DO-30)	-65°C ~ 200°C
1N6625E3 DIODE GEN PURP 1.1KV 1A A AXIAL Microchip Technology	3,021	RFQ	-	-	A, Axial	Bulk	Discontinued at Digi-Key	Standard	1100 V	1A	1.95 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	1 µA @ 1000 V	-	-	-	Through Hole	A, Axial	-65°C ~ 150°C
JANTX1N6075 DIODE GEN PURP 150V 850MA A-PAK Microchip Technology	6,755	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	150 V	850mA	2.04 V @ 9.4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 150 V	-	Military	MIL-PRF-19500/503	Through Hole	A-PAK	-65°C ~ 155°C
IDY15S120XKSA1 DIODE SIC 1.2KV 7.5A TO247HC-3 Infineon Technologies	6,713	RFQ	Datasheet	CoolSiC™+	TO-247-3 Variant	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	7.5A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 1200 V	375pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247HC-3	-55°C ~ 150°C
SIDC105D120H8X1SA1 DIODE GP 1.2KV 200A WAFER Infineon Technologies	3,299	RFQ	Datasheet	-	Die	Bulk	Discontinued at Digi-Key	Standard	1200 V	200A	1.41 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 1200 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 175°C
VS-85HF140M DIODE GEN PURP 1.4KV 85A DO203AB Vishay General Semiconductor - Diodes Division	2,359	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1400 V	85A	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
VS-85HF160M DIODE GEN PURP 1.6KV 85A DO203AB Vishay General Semiconductor - Diodes Division	7,896	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1600 V	85A	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
VS-85HFR140M DIODE GP REV 1.4KV 85A DO203AB Vishay General Semiconductor - Diodes Division	6,406	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1400 V	85A	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C

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Single Diodes Electronic Components

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