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Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
UTR62 Microchip Technology electronic component

UTR62

DIODE GEN PURP 600V 2A A AXIAL

Microchip Technology

2,118
RFQ

-

- A, Axial Bulk Active Standard 600 V 2A 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 3 µA @ 600 V 40pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
JANTX1N5419 Microchip Technology electronic component

JANTX1N5419

DIODE GEN PURP 500V 3A AXIAL

Microchip Technology

9,180
RFQ

Datasheet

- B, Axial Bulk Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
LSIC2SD120D10 Littelfuse Inc. electronic component

LSIC2SD120D10

DIODE SIL CARB 1.2KV 28A TO263L

Littelfuse Inc.

5,546
RFQ

Datasheet

Gen2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 28A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 582pF @ 1V, 1MHz - - Surface Mount TO-263-2L -55°C ~ 175°C
JAN1N5420/TR Microchip Technology electronic component

JAN1N5420/TR

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

6,191
RFQ

Datasheet

- B, Axial Tape & Reel (TR) Active Standard 600 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
WBST080SCM120CGALW WeEn Semiconductors electronic component

WBST080SCM120CGALW

WBST080SCM120CGAL/NAU000/NO MARK

WeEn Semiconductors

4,318
RFQ

-

- - Bulk Active - - - - - - - - - - - - -
LSIC2SD065C16A Littelfuse Inc. electronic component

LSIC2SD065C16A

DIODE SIL CARB 650V 38A TO252

Littelfuse Inc.

9,017
RFQ

Datasheet

Gen2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 38A 1.8 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 730pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
80EPF12 Vishay General Semiconductor - Diodes Division electronic component

80EPF12

DIODE GEN PURP 1.2KV 80A TO247AC

Vishay General Semiconductor - Diodes Division

6,130
RFQ

Datasheet

- TO-247-3 Tube Obsolete Standard 1200 V 80A 1.35 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 480 ns 100 µA @ 1200 V - - - Through Hole TO-247AC -65°C ~ 175°C
JANTXV1N5417/TR Microchip Technology electronic component

JANTXV1N5417/TR

DIODE GEN PURP 200V 3A

Microchip Technology

9,598
RFQ

Datasheet

- B, Axial Tape & Reel (TR) Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
121NQ040 Vishay General Semiconductor - Diodes Division electronic component

121NQ040

DIODE SCHOTTKY 40V 120A D-67

Vishay General Semiconductor - Diodes Division

3,604
RFQ

Datasheet

- D-67 HALF-PAK Bulk Obsolete Schottky 40 V 120A 650 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 40 V 5200pF @ 5V, 1MHz - - Chassis Mount D-67 HALF-PAK -
AIDW40S65C5XKSA1 Infineon Technologies electronic component

AIDW40S65C5XKSA1

DIODE SIL CARB 650V 40A TO247-3

Infineon Technologies

3,227
RFQ

Datasheet

CoolSiC™ TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 40A 1.7 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 1138pF @ 1V, 1MHz Automotive AEC-Q100/101 Through Hole PG-TO247-3-41 -40°C ~ 175°C
CDLL5819E3/TR Microchip Technology electronic component

CDLL5819E3/TR

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

3,322
RFQ

Datasheet

- DO-213AB, MELF (Glass) Tape & Reel (TR) Active Schottky 45 V 1A 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz - - Surface Mount DO-213AB -65°C ~ 125°C
JANTX1N5419/TR Microchip Technology electronic component

JANTX1N5419/TR

DIODE GEN PURP 500V 3A

Microchip Technology

4,929
RFQ

Datasheet

- B, Axial Tape & Reel (TR) Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
UT252 Microchip Technology electronic component

UT252

DIODE GEN PURP 200V 1A A AXIAL

Microchip Technology

4,679
RFQ

-

- A, Axial Bulk Active Standard 200 V 1A 1 V @ 750 mA Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 200 V - - - Through Hole A, Axial -65°C ~ 175°C
JAN1N5417US Microchip Technology electronic component

JAN1N5417US

DIODE GEN PURP 200V 3A B SQ-MELF

Microchip Technology

6,610
RFQ

Datasheet

- SQ-MELF, B Bulk Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/411 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTXV1N4248/TR Microchip Technology electronic component

JANTXV1N4248/TR

DIODE GEN PURP 800V 1A

Microchip Technology

9,011
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 800 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
GB10SLT12-220 GeneSiC Semiconductor electronic component

GB10SLT12-220

DIODE SIL CARB 1.2KV 10A TO220-2

GeneSiC Semiconductor

7,227
RFQ

-

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 520pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
CN5179 BK TIN/LEAD Central Semiconductor Corp electronic component

CN5179 BK TIN/LEAD

DIODE GEN PURP 20V DO35

Central Semiconductor Corp

7,101
RFQ

-

- DO-204AH, DO-35, Axial Box Obsolete Standard 20 V - 3.7 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 10 µA @ 20 V - - - Through Hole DO-35 -65°C ~ 150°C
JANTX1N5614US Microchip Technology electronic component

JANTX1N5614US

DIODE GEN PURP 200V 1A D-5A

Microchip Technology

3,826
RFQ

Datasheet

- SQ-MELF, A Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - Military MIL-PRF-19500/437 Surface Mount D-5A -65°C ~ 200°C
SIC20120B-BP Micro Commercial Co electronic component

SIC20120B-BP

Interface

Micro Commercial Co

3,825
RFQ

Datasheet

- TO-220-2 Bulk Last Time Buy SiC (Silicon Carbide) Schottky 1200 V 20A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
VS-86HF80 Vishay General Semiconductor - Diodes Division electronic component

VS-86HF80

DIODE GEN PURP 800V 85A DO203AB

Vishay General Semiconductor - Diodes Division

5,650
RFQ

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 800 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 800 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C

Single Diodes Electronic Components

Explore Single Diodes electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions

Q1: What products are included in Single Diodes?
This category includes related Single Diodes subcategories and electronic components from multiple manufacturers. Select a lower-level category to view available part numbers.

Q2: Can I request a quotation for Single Diodes components?
Yes. Send us the part numbers and required quantities, and our team will provide sourcing and quotation support.

Q3: Are datasheets and technical information available?
Yes. Datasheets and technical information are available on supported final product pages and product listings.

Q4: Do you support BOM sourcing?
Yes. We support BOM matching, component procurement and alternative sourcing for Single Diodes and other electronic components.