Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-72HF60 DIODE GEN PURP 600V 70A DO203AB Vishay General Semiconductor - Diodes Division	5,429	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	600 V	70A	1.35 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
VS-72HFR60 DIODE GP REV 600V 70A DO203AB Vishay General Semiconductor - Diodes Division	2,235	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	70A	1.35 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
LSIC2SD065C10A DIODE SIL CARB 650V 27A TO252 Littelfuse Inc.	8,889	RFQ	Datasheet	Gen2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	27A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	470pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
SCS308AMC DIODE SIL CARB 650V 8A TO220FM Rohm Semiconductor	1	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	400pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	175°C (Max)
1N5806USE3/TR DIODE GEN PURP 150V 1A D-5A Microchip Technology	3,742	RFQ	Datasheet	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	150 V	1A	975 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	-	-	Surface Mount	D-5A	-65°C ~ 175°C
1N4249/TR DIODE GEN PURP 1KV 1A Microchip Technology	6,042	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 1 V	-	-	-	Through Hole	A, Axial	-65°C ~ 175°C
SICB0860P-TP DIODE SIL CARBIDE 650V 8A D2PAK Micro Commercial Co	8,987	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	36 µA @ 650 V	346pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
JANTX1N4944/TR DIODE GEN PURP 400V 1A Microchip Technology	8,808	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 400 V	-	Military	MIL-PRF-19500/359	Through Hole	A, Axial	-65°C ~ 175°C
SIC15120Y-BP SCHOTTKY DIODES Micro Commercial Co	7,078	RFQ	Datasheet	-	TO-220-2	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.45 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 1200 V	1552pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
JANTX1N3957 DIODE GEN PURP 1KV 1A Microchip Technology	6,969	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	-	Military	MIL-PRF-19500/228	Through Hole	A, Axial	-65°C ~ 175°C
JANTX1N5622/TR DIODE GEN PURP 1KV 1A Microchip Technology	3,611	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 1 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
1N4943/TR UFR,FRR Microchip Technology	3,149	RFQ	-	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
VS-41HF40 DIODE GEN PURP 400V 40A DO203AB Vishay General Semiconductor - Diodes Division	2,910	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	400 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
VS-41HFR40 DIODE GP REV 400V 40A DO203AB Vishay General Semiconductor - Diodes Division	3,107	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	400 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
PCDD05120G1_L2_00001 1200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	4,803	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	252pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
JAN1N5415 DIODE GEN PURP 50V 3A AXIAL Microchip Technology	4,694	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	50 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 50 V	-	Military	MIL-PRF-19500/411	Through Hole	B, Axial	-65°C ~ 175°C
JAN1N5416 DIODE GEN PURP 100V 3A AXIAL Microchip Technology	7,063	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	100 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 100 V	-	Military	MIL-PRF-19500/411	Through Hole	B, Axial	-65°C ~ 175°C
JAN1N6643US DIODE GEN PURP 50V 300MA D-5D Microchip Technology	3,232	RFQ	Datasheet	-	SQ-MELF, D	Bulk	Discontinued at Digi-Key	Standard	50 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	Military	MIL-PRF-19500/578	Surface Mount	D-5D	-65°C ~ 175°C
VS-72HF80 DIODE GEN PURP 800V 70A DO203AB Vishay General Semiconductor - Diodes Division	8,971	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	800 V	70A	1.35 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 150°C
VS-72HFR80 DIODE GP REV 800V 70A DO203AB Vishay General Semiconductor - Diodes Division	9,161	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	800 V	70A	1.35 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 150°C

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Single Diodes Electronic Components

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