Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-50PFR120 DIODE GP REV 1.2KV 50A DO203AB Vishay General Semiconductor - Diodes Division	7,918	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1200 V	50A	1.4 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-55°C ~ 180°C
SCS206AMC DIODE SIL CARB 650V 6A TO220FM Rohm Semiconductor	9,883	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	175°C (Max)
LSIC2SD120C05 DIODE SIC 1.2KV 18.1A TO252L Littelfuse Inc.	7,658	RFQ	Datasheet	Gen2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	18.1A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	310pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
1N5614/TR DIODE GEN PURP 200V 1A Microchip Technology	6,641	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 200 V	-	-	-	Through Hole	A, Axial	-65°C ~ 200°C
GKN26/04 DIODE GEN PURP 400V 25A DO4 GeneSiC Semiconductor	8,234	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Obsolete	Standard	400 V	25A	1.55 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	4 mA @ 400 V	-	-	-	Chassis, Stud Mount	DO-4	-40°C ~ 180°C
JAN1N3613 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	3,247	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 300 V	-	Military	MIL-PRF-19500/228	Through Hole	A, Axial	-65°C ~ 175°C
JAN1N3611/TR DIODE GEN PURP 200V 1A Microchip Technology	5,534	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	200 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 300 V	-	Military	MIL-PRF-19500/228	Through Hole	A, Axial	-65°C ~ 175°C
1N485A/TR DIODE GEN PURP 180V 100MA DO7 Microchip Technology	7,930	RFQ	-	-	DO-204AA, DO-7, Axial	Tape & Reel (TR)	Active	Standard	180 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	25 nA @ 180 V	-	-	-	Through Hole	DO-7	-65°C ~ 175°C
1N485/TR DIODE GEN PURP 180V 100MA DO7 Microchip Technology	5,048	RFQ	-	-	DO-204AA, DO-7, Axial	Tape & Reel (TR)	Active	Standard	180 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	25 nA @ 180 V	-	-	-	Through Hole	DO-7	-65°C ~ 175°C
DSC10065 DIODE SIL CARB 650V 10A TO220AC Diodes Incorporated	7,449	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 650 V	400pF @ 100mV, 1MHz	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 175°C
VS-12FL60S05 DIODE GEN PURP 600V 12A DO203AA Vishay General Semiconductor - Diodes Division	4,102	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	600 V	12A	1.4 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	50 µA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C
VS-12FLR60S05 DIODE GP REV 600V 12A DO203AA Vishay General Semiconductor - Diodes Division	4,163	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	12A	1.4 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	50 µA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C
VS-60APU06HN3 DIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division	6,511	RFQ	Datasheet	FRED Pt®	TO-247-3	Tube	Active	Standard	600 V	60A	1.68 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	81 ns	50 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AC	-55°C ~ 175°C
VS-16FL20S02 DIODE GEN PURP 200V 16A DO203AA Vishay General Semiconductor - Diodes Division	2,066	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	200 V	16A	1.4 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	50 µA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C
SCS306APC9 DIODE SILICON CARBIDE 650V 6A Rohm Semiconductor	4,796	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	-	175°C (Max)
VS-90APF06L-M3 DIODE GEN PURP 600V 90A TO247AD Vishay General Semiconductor - Diodes Division	7,783	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	90A	1.3 V @ 90 A	Fast Recovery =< 500ns, > 200mA (Io)	190 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
VS-90EPF06L-M3 DIODE GEN PURP 600V 90A TO247AD Vishay General Semiconductor - Diodes Division	6,529	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	90A	1.3 V @ 90 A	Fast Recovery =< 500ns, > 200mA (Io)	190 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
1N649UR-1/TR DIODE GP 600V 400MA DO213AA Microchip Technology	7,297	RFQ	-	-	DO-213AA	Tape & Reel (TR)	Active	Standard	600 V	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	50 nA @ 600 V	-	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
S16B DIODE GEN PURP 100V 16A DO203AA GeneSiC Semiconductor	6,898	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	100 V	16A	1.1 V @ 16 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	-	-	Chassis, Stud Mount	-	-65°C ~ 175°C
S16BR DIODE GEN PURP 100V 16A DO220AA GeneSiC Semiconductor	2,598	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	100 V	16A	1.1 V @ 16 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	-	-	Chassis, Stud Mount	-	-65°C ~ 175°C

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Single Diodes Electronic Components

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