Hello! Welcome to Raywise Technologies Co.,Limited!

Diode Arrays

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Diode Configuration Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) (per Diode) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Grade Qualification Mounting Type Supplier Device Package
VS-U5FX120FA60 Vishay General Semiconductor - Diodes Division electronic component

VS-U5FX120FA60

DIODE MODULE GP 600V 60A SOT-227

Vishay General Semiconductor - Diodes Division

154
RFQ

Datasheet

FRED Pt® SOT-227-4, miniBLOC Tube Active 2 Independent Standard 600 V 60A (DC) 2.2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 63 ns 40 µA @ 600 V -55°C ~ 175°C - - Chassis Mount SOT-227
VS-U5FH150FA60 Vishay General Semiconductor - Diodes Division electronic component

VS-U5FH150FA60

DIODE MODULE GP 600V 75A SOT-227

Vishay General Semiconductor - Diodes Division

160
RFQ

Datasheet

FRED Pt® SOT-227-4, miniBLOC Tube Active 2 Independent Standard 600 V 75A (DC) 1.7 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 50 µA @ 600 V -55°C ~ 175°C - - Chassis Mount SOT-227
VS-U5FX150FA60 Vishay General Semiconductor - Diodes Division electronic component

VS-U5FX150FA60

DIODE MODULE GP 600V 75A SOT-227

Vishay General Semiconductor - Diodes Division

126
RFQ

Datasheet

FRED Pt® SOT-227-4, miniBLOC Tube Active 2 Independent Standard 600 V 75A (DC) 2.2 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 50 µA @ 600 V -55°C ~ 175°C - - Chassis Mount SOT-227
PCDH40120CCG1_T0_00601 Panjit International Inc. electronic component

PCDH40120CCG1_T0_00601

DIODE ARR SIC 1200V 20A TO-247AD

Panjit International Inc.

1,500
RFQ

Datasheet

- TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 1200 V 20A (DC) 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 1200 V -55°C ~ 175°C - - Through Hole TO-247AD
IV1D12040U2 Inventchip electronic component

IV1D12040U2

DIODE ARR SIC 1200V 102A TO2472

Inventchip

120
RFQ

Datasheet

- TO-247-2 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 1200 V 102A (DC) 1.8 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V -55°C ~ 175°C - - Through Hole TO-247-2
1N4148UBCA/TR Microchip Technology electronic component

1N4148UBCA/TR

DIODE ARRAY GP 75V 200MA UB

Microchip Technology

200
RFQ

Datasheet

- 3-SMD, No Lead Tape & Reel (TR) Active 1 Pair Common Anode Standard 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 500 nA @ 75 V -65°C ~ 200°C - - Surface Mount UB
1N4148UBD Microchip Technology electronic component

1N4148UBD

DIODE ARRAY GP 75V 200MA UB

Microchip Technology

151
RFQ

Datasheet

- 3-SMD, No Lead Bulk Active 1 Pair Series Connection Standard 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 500 nA @ 75 V -65°C ~ 200°C - - Surface Mount UB
RJS6004WDPK-00#T0 Renesas Electronics Corporation electronic component

RJS6004WDPK-00#T0

DIODE ARRAY SIC 600V 10A TO-3P

Renesas Electronics Corporation

750
RFQ

Datasheet

- TO-220-3 Full Pack Bulk Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 600 V 10A (DC) 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 15 ns 10 µA @ 600 V -55°C ~ 150°C - - Through Hole TO-3P
GB2X50MPS12-227 GeneSiC Semiconductor electronic component

GB2X50MPS12-227

DIODE MOD SIC 1200V 93A SOT-227

GeneSiC Semiconductor

248
RFQ

Datasheet

SiC Schottky MPS™ SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1200 V 93A (DC) 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V -55°C ~ 175°C - - Chassis Mount SOT-227
DCG45X1200NA IXYS electronic component

DCG45X1200NA

DIODE MOD SIC 1200V 22A SOT227B

IXYS

196
RFQ

Datasheet

- SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1200 V 22A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V -40°C ~ 175°C - - Chassis Mount SOT-227B
GB2X50MPS17-227 GeneSiC Semiconductor electronic component

GB2X50MPS17-227

DIODE MOD SIC 1700V 136A SOT-227

GeneSiC Semiconductor

79
RFQ

Datasheet

SiC Schottky MPS™ SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1700 V 136A (DC) 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1700 V -55°C ~ 175°C - - Chassis Mount SOT-227
MBRT20060R GeneSiC Semiconductor electronic component

MBRT20060R

DIODE MOD SCHOTT 60V 100A 3TOWER

GeneSiC Semiconductor

67
RFQ

Datasheet

- Three Tower Bulk Active 1 Pair Common Anode Schottky 60 V 100A 800 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MUR20020CT GeneSiC Semiconductor electronic component

MUR20020CT

DIODE MODULE GP 200V 100A 2TOWER

GeneSiC Semiconductor

48
RFQ

Datasheet

- Twin Tower Bulk Active 1 Pair Common Cathode Standard 200 V 100A 1.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
DDB6U85N16LHOSA1 Infineon Technologies electronic component

DDB6U85N16LHOSA1

DIODE MODULE GP 1600V AGISOPACK1

Infineon Technologies

9
RFQ

Datasheet

- Module Bulk Obsolete 3 Independent Standard 1600 V 60A 1.44 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 5 mA @ 1600 V 150°C (Max) - - Chassis Mount AG-ISOPACK-1
MD165A16D2-BP Micro Commercial Co electronic component

MD165A16D2-BP

DIODE MODULE GP 1600V 165A D2

Micro Commercial Co

80
RFQ

Datasheet

- D2 Bulk Active 1 Pair Common Anode Standard 1600 V 165A 1.4 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1600 V -40°C ~ 150°C - - Chassis Mount D2
MSCDC150KK70D1PAG Microchip Technology electronic component

MSCDC150KK70D1PAG

DIODE MODULE SIC 700V 150A D1P

Microchip Technology

34
RFQ

Datasheet

- Module Box Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 700 V 150A 1.8 V @ 150 A No Recovery Time > 500mA (Io) 0 ns 600 µA @ 700 V -40°C ~ 175°C - - Chassis Mount D1P
DCG130X1200NA IXYS electronic component

DCG130X1200NA

DIODE MOD SIC 1200V 64A SOT227B

IXYS

335
RFQ

Datasheet

- SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1200 V 64A 1.8 V @ 60 A No Recovery Time > 500mA (Io) 0 ns 800 µA @ 1200 V -40°C ~ 175°C - - Chassis Mount SOT-227B
JANTX1N6511 Microchip Technology electronic component

JANTX1N6511

DIODE ARRAY GP 75V 300MA 14-CDIP

Microchip Technology

90
RFQ

-

- 14-CDIP (0.300", 7.62mm) Bulk Active 7 Independent Standard 75 V 300mA (DC) 1 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 10 ns 100 nA @ 40 V - Military MIL-PRF-19500/4 Through Hole 14-CDIP
DD400S33K2CNOSA1 Infineon Technologies electronic component

DD400S33K2CNOSA1

DIODE MODULE GP 3300V AIHV130-3

Infineon Technologies

9,416
RFQ

Datasheet

- Module Bulk Obsolete 2 Independent Standard 3300 V - 3.5 V @ 400 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount A-IHV130-3
DD800S33K2CNOSA1 Infineon Technologies electronic component

DD800S33K2CNOSA1

DIODE MODULE GP 3300V AIHV130-3

Infineon Technologies

6,254
RFQ

Datasheet

- Module Bulk Obsolete 2 Independent Standard 3300 V - 3.5 V @ 800 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount A-IHV130-3
Total 15087 Record«Prev1... 188189190191192193194195...755Next»

Diode Arrays Electronic Components

Explore Diode Arrays electronic components, related subcategories, product specifications, datasheets and sourcing options. We support original component procurement, BOM sourcing and RFQ services for engineers, distributors and global buyers.

Frequently Asked Questions