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Single IGBTs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic Power - Max Switching Energy Input Type Gate Charge Td (on/off) @ 25°C Test Condition Reverse Recovery Time (trr) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT40GP60BG Microchip Technology electronic component

APT40GP60BG

IGBT PT 600V 100A TO247

Microchip Technology

9,603
RFQ

Datasheet

POWER MOS 7® TO-247-3 Tube Active PT 600 V 100 A 160 A 2.7V @ 15V, 40A 543 W 385µJ (on), 352µJ (off) Standard 135 nC 20ns/64ns 400V, 40A, 5Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
APT40GP60B2DQ2G Microchip Technology electronic component

APT40GP60B2DQ2G

IGBT PT 600V 100A

Microchip Technology

8,713
RFQ

Datasheet

POWER MOS 7® TO-247-3 Variant Tube Active PT 600 V 100 A 160 A 2.7V @ 15V, 40A 543 W 385µJ (on), 350µJ (off) Standard 135 nC 20ns/64ns 400V, 40A, 5Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole -
APT70GR120L Microchip Technology electronic component

APT70GR120L

IGBT NPT 1200V 160A TO264

Microchip Technology

4,755
RFQ

Datasheet

- TO-264-3, TO-264AA Tube Active NPT 1200 V 160 A 280 A 3.2V @ 15V, 70A 961 W 3.82mJ (on), 2.58mJ (off) Standard 544 nC 33ns/278ns 600V, 70A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-264
APT70GR120B2 Microchip Technology electronic component

APT70GR120B2

IGBT NPT 1200V 160A TO247

Microchip Technology

3,639
RFQ

Datasheet

- TO-247-3 Tube Active NPT 1200 V 160 A 280 A 3.2V @ 15V, 70A 961 W 3.82mJ (on), 2.58mJ (off) Standard 544 nC 33ns/278ns 600V, 70A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-247
IXXX140N65B4H1 IXYS electronic component

IXXX140N65B4H1

IGBT

IXYS

9,932
RFQ

Datasheet

XPT™, GenX4™ TO-247-3 Variant Tube Active - 650 V 340 A 840 A 1.9V @ 15V, 120A 1200 W 5.75mJ (on), 2.67mJ (off) Standard 250 nC 54ns/270ns 400V, 100A, 4.7Ohm, 15V 105 ns -55°C ~ 175°C (TJ) - - Through Hole PLUS247™-3
IXYX100N65B3D1 IXYS electronic component

IXYX100N65B3D1

IGBT PT 650V 225A PLUS247-3

IXYS

4,742
RFQ

Datasheet

GenX3™, XPT™ TO-247-3 Variant Tube Obsolete PT 650 V 225 A 460 A 1.85V @ 15V, 70A 830 W 1.27mJ (on), 1.37mJ (off) Standard 168 nC 29ns/150ns 400V, 50A, 3Ohm, 15V 156 ns -55°C ~ 175°C (TJ) - - Through Hole PLUS247™-3
IXXK200N60B3 IXYS electronic component

IXXK200N60B3

IGBT 600V 380A 1630W TO264

IXYS

7,913
RFQ

Datasheet

GenX3™, XPT™ TO-264-3, TO-264AA Tube Active PT 600 V 380 A 900 A 1.7V @ 15V, 100A 1630 W 2.85mJ (on), 2.9mJ (off) Standard 315 nC 48ns/160ns 360V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) - - Through Hole TO-264 (IXXK)
IXBT2N250-TR IXYS electronic component

IXBT2N250-TR

IGBT 2500V 5A TO268

IXYS

7,342
RFQ

-

BIMOSFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active - 2500 V 5 A 13 A 3.5V @ 15V, 2A 32 W - Standard 10.6 nC 30ns/70ns 2000V, 2A, 47Ohm, 15V 920 ns -55°C ~ 150°C (TJ) - - Surface Mount TO-268
IXBT42N170-TRL IXYS electronic component

IXBT42N170-TRL

IGBT 1700V 80A TO268

IXYS

2,970
RFQ

-

BIMOSFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active - 1700 V 80 A 300 A 2.8V @ 15V, 42A 360 W - Standard 188 nC 37ns/340ns 850V, 42A, 10Ohm, 15V - - - - Surface Mount TO-268
APT50GP60B2DQ2G Microchip Technology electronic component

APT50GP60B2DQ2G

IGBT PT 600V 150A

Microchip Technology

6,824
RFQ

Datasheet

POWER MOS 7® TO-247-3 Variant Tube Active PT 600 V 150 A 190 A 2.7V @ 15V, 50A 625 W 465µJ (on), 635µJ (off) Standard 165 nC 19ns/85ns 400V, 50A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole -
IXYK30N170CV1 IXYS electronic component

IXYK30N170CV1

DISC IGBT XPT-HI VOLTAGE TO-264(

IXYS

7,212
RFQ

Datasheet

XPT™ TO-264-3, TO-264AA Tube Active PT 1700 V 100 A 250 A 4V @ 15V, 30A 937 W 3.6mJ (on), 1.8mJ (off) Standard 150 nC 16ns/143ns 850V, 30A, 2.7Ohm, 15V 33 ns -55°C ~ 175°C (TJ) - - Through Hole TO-264 (IXYK)
IXGX50N60AU1 IXYS electronic component

IXGX50N60AU1

IGBT 600V 75A 300W TO247

IXYS

5,589
RFQ

-

HiPerFAST™ TO-247-3 Tube Obsolete - 600 V 75 A 200 A 2.7V @ 15V, 50A 300 W 4.8mJ (off) Standard 200 nC 50ns/200ns 480V, 50A, 2.7Ohm, 15V 50 ns -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
IXBT24N170 IXYS electronic component

IXBT24N170

IGBT 1700V 60A TO268AA

IXYS

4,307
RFQ

Datasheet

BIMOSFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active - 1700 V 60 A 230 A 2.5V @ 15V, 24A 250 W - Standard 140 nC - - 1.06 µs -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
IXGX55N120A3H1 IXYS electronic component

IXGX55N120A3H1

IGBT 1200V 125A 460W PLUS247

IXYS

2,769
RFQ

Datasheet

GenX3™ TO-247-3 Variant Tube Active PT 1200 V 125 A 400 A 2.3V @ 15V, 55A 460 W 5.1mJ (on), 13.3mJ (off) Standard 185 nC 23ns/365ns 960V, 55A, 3Ohm, 15V 200 ns - - - Through Hole PLUS247™-3
APT50GS60BRDQ2G Microchip Technology electronic component

APT50GS60BRDQ2G

IGBT NPT 600V 93A TO247

Microchip Technology

6,927
RFQ

Datasheet

Thunderbolt IGBT® TO-247-3 Tube Active NPT 600 V 93 A 195 A 3.15V @ 15V, 50A 415 W 755µJ (off) Standard 235 nC 16ns/225ns 400V, 40A, 4.7Ohm, 15V 25 ns -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
APT102GA60L Microchip Technology electronic component

APT102GA60L

IGBT PT 600V 183A TO264

Microchip Technology

8,325
RFQ

-

- TO-264-3, TO-264AA Tube Active PT 600 V 183 A 307 A 2.5V @ 15V, 62A 780 W 1.354mJ (on), 1.614mJ (off) Standard 294 nC 28ns/212ns 400V, 62A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
APT102GA60B2 Microchip Technology electronic component

APT102GA60B2

IGBT 600V 183A 780W TO247

Microchip Technology

2,847
RFQ

-

POWER MOS 8™ TO-247-3 Variant Tube Obsolete PT 600 V 183 A 307 A 2.5V @ 15V, 62A 780 W 1.354mJ (on), 1.614mJ (off) Standard 294 nC 28ns/212ns 400V, 62A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole -
APT80GA90LD40 Microchip Technology electronic component

APT80GA90LD40

IGBT PT 900V 145A TO264

Microchip Technology

3,262
RFQ

Datasheet

POWER MOS 8™ TO-264-3, TO-264AA Tube Active PT 900 V 145 A 239 A 3.1V @ 15V, 47A 625 W 1652µJ (on), 1389µJ (off) Standard 200 nC 18ns/149ns 600V, 47A, 4.7Ohm, 15V 25 ns - - - Through Hole TO-264
IGC70T120T8RQ Infineon Technologies electronic component

IGC70T120T8RQ

IGBT 1200V 75A DIE

Infineon Technologies

5,766
RFQ

Datasheet

- Die Bulk Discontinued at Digi-Key Trench Field Stop 1200 V - 225 A 2.42V @ 15V, 75A - - Standard - - - - - - - Surface Mount Die
IXGR24N120C3D1 IXYS electronic component

IXGR24N120C3D1

IGBT 1200V 48A 200W ISOPLUS247

IXYS

9,046
RFQ

Datasheet

GenX3™ TO-247-3 Tube Active PT 1200 V 48 A 96 A 4.2V @ 15V, 20A 200 W 1.37mJ (on), 470µJ (off) Standard 79 nC 16ns/93ns 600V, 20A, 5Ohm, 15V 220 ns -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
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Single IGBTs Electronic Components

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