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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK12A55D(STA4,Q,M) Toshiba Semiconductor and Storage electronic component

TK12A55D(STA4,Q,M)

MOSFET N-CH 550V 12A TO220SIS

Toshiba Semiconductor and Storage

8,584
RFQ

Datasheet

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 12A (Ta) 10V 570mOhm @ 6A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK2R9E10PL,S1X Toshiba Semiconductor and Storage electronic component

TK2R9E10PL,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

3,460
RFQ

Datasheet

U-MOSIX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Ta) 4.5V, 10V 2.9mOhm @ 50A, 10V 2.5V @ 1mA 161 nC @ 10 V ±20V 9500 pF @ 50 V - 306W (Tc) 175°C - - Through Hole TO-220
NTMFS5C406NT1G onsemi electronic component

NTMFS5C406NT1G

T6 40V SG NCH SO8FL HEFET

onsemi

5,550
RFQ

Datasheet

- - Tape & Reel (TR) Active - - - 353A (Tc) - - - - - - - - - - - - -
RS6E120BGTB1 Rohm Semiconductor electronic component

RS6E120BGTB1

30V 270A HSOP8, POWER MOSFET : R

Rohm Semiconductor

7,370
RFQ

Datasheet

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 4.5V, 10V 1.1mOhm @ 90A, 10V 2.5V @ 1mA 75 nC @ 10 V ±20V 5750 pF @ 15 V - 3W (Ta), 138W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
PSMP033N10NS2_T0_00601 Panjit International Inc. electronic component

PSMP033N10NS2_T0_00601

Excellent FOM

Panjit International Inc.

2,199
RFQ

-

- - Tube Active - - - - - - - - - - - - - - - - -
NTMJS1D3N04CTWG onsemi electronic component

NTMJS1D3N04CTWG

MOSFET N-CH 40V 41A/235A 8LFPAK

onsemi

2,886
RFQ

Datasheet

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 235A (Tc) 10V 1.3mOhm @ 50A, 10V 3.5V @ 170µA 65 nC @ 10 V ±20V 4300 pF @ 25 V - 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-LFPAK
SIDR5102EP-T1-RE3 Vishay Siliconix electronic component

SIDR5102EP-T1-RE3

N-CHANNEL 100 V (D-S) 175C MOSFE

Vishay Siliconix

5,833
RFQ

Datasheet

TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 28.2A (Ta), 126A (Tc) 7.5V, 10V 4.1mOhm @ 20A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 2850 pF @ 50 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8DC
MCTL2D1N10YH-TP Micro Commercial Co electronic component

MCTL2D1N10YH-TP

N-CHANNEL MOSFET,TOLL-8L

Micro Commercial Co

2,510
RFQ

-

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 265A (Tc) 10V 2.1mOhm @ 50A, 10V 3.8V @ 250µA 133 nC @ 10 V ±20V 9600 pF @ 50 V - 375W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount TOLL-8L
TK13A55DA(STA4,QM) Toshiba Semiconductor and Storage electronic component

TK13A55DA(STA4,QM)

MOSFET N-CH 550V 12.5A TO220SIS

Toshiba Semiconductor and Storage

9,049
RFQ

Datasheet

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 12.5A (Ta) 10V 480mOhm @ 6.3A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
SIHD240N65E-GE3 Vishay Siliconix electronic component

SIHD240N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

3,717
RFQ

Datasheet

E TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 240mOhm @ 7A, 10V 5V @ 250µA 29 nC @ 10 V ±30V 960 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
STO24N60M6 STMicroelectronics electronic component

STO24N60M6

DISCRETE

STMicroelectronics

5,440
RFQ

Datasheet

- 8-PowerSFN Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 4.75V @ 250µA 23 nC @ 10 V ±25V 960 pF @ 100 V - 142W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TOLL (HV)
NVMFS5C628NT1G onsemi electronic component

NVMFS5C628NT1G

MOSFET N-CH 60V 28A/150A 5DFN

onsemi

6,049
RFQ

Datasheet

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta), 150A (Tc) 10V 3mOhm @ 27A, 10V 4V @ 135µA 34 nC @ 10 V ±20V 2630 pF @ 30 V - 3.7W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
TK10J80E,S1E Toshiba Semiconductor and Storage electronic component

TK10J80E,S1E

MOSFET N-CH 800V 10A TO3P

Toshiba Semiconductor and Storage

18
RFQ

Datasheet

π-MOSVIII TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Ta) 10V 1Ohm @ 5A, 10V 4V @ 1mA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 250W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
SUD50P06-15L-T4-E3 Vishay Siliconix electronic component

SUD50P06-15L-T4-E3

MOSFET P-CH 60V 50A TO252

Vishay Siliconix

3,923
RFQ

Datasheet

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 15mOhm @ 17A, 10V 3V @ 250µA 165 nC @ 10 V ±20V 4950 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
RD3P07BBHTL1 Rohm Semiconductor electronic component

RD3P07BBHTL1

NCH 100V 70A, TO-252, POWER MOSF

Rohm Semiconductor

7,469
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 6V, 10V 7.7mOhm @ 70A, 10V 4V @ 1mA 38 nC @ 10 V ±20V 2410 pF @ 50 V - 89W (Tc) 150°C (TJ) - - Surface Mount TO-252
TK14A55D(STA4,Q,M) Toshiba Semiconductor and Storage electronic component

TK14A55D(STA4,Q,M)

MOSFET N-CH 550V 14A TO220SIS

Toshiba Semiconductor and Storage

22
RFQ

Datasheet

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 14A (Ta) 10V 370mOhm @ 7A, 10V 4V @ 1mA 40 nC @ 10 V ±30V 2300 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
SUM60030E-GE3 Vishay Siliconix electronic component

SUM60030E-GE3

MOSFET N-CH 80V 120A TO263

Vishay Siliconix

7,576
RFQ

Datasheet

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 7.5V, 10V 3.2mOhm @ 30A, 10V 4V @ 250µA 141 nC @ 10 V ±20V 7910 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
TK17E65W,S1X Toshiba Semiconductor and Storage electronic component

TK17E65W,S1X

MOSFET N-CH 650V 17.3A TO220

Toshiba Semiconductor and Storage

23
RFQ

Datasheet

DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 200mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C (TJ) - - Through Hole TO-220
IRF150DM115XTMA1 Infineon Technologies electronic component

IRF150DM115XTMA1

TRENCH >=100V DIRECTFET

Infineon Technologies

5,474
RFQ

-

- - Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V - - - - - - - - - - - - - -
SIHP240N65E-GE3 Vishay Siliconix electronic component

SIHP240N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

2,642
RFQ

Datasheet

E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 240mOhm @ 7A, 10V 5V @ 250µA 29 nC @ 10 V ±30V 960 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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FETs, MOSFETs Electronic Components

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