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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
PSMD099N10LS2_L2_00601 Panjit International Inc. electronic component

PSMD099N10LS2_L2_00601

Exc FOM/100V/9.9m/TO-252AA

Panjit International Inc.

6,105
RFQ

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SISS5708DN-T1-BE3 Vishay Siliconix electronic component

SISS5708DN-T1-BE3

N-CHANNEL 150 V (D-S) MOSFET 150

Vishay Siliconix

8,791
RFQ

Datasheet

TrenchFET® Gen V PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 9.3A (Ta), 33.8A (Tc) 7.5V, 10V 23mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 975 pF @ 75 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
STF80N1K1K6 STMicroelectronics electronic component

STF80N1K1K6

N-CHANNEL 800 V, 1.0 OHM TYP., 5

STMicroelectronics

7,644
RFQ

Datasheet

ECOPACK® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 1.1Ohm @ 1.7A, 10V 4V @ 50µA 5.7 nC @ 10 V ±30V 300 pF @ 400 V - 21W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
SIHP186N60EF-GE3 Vishay Siliconix electronic component

SIHP186N60EF-GE3

MOSFET N-CH 600V 18A TO220AB

Vishay Siliconix

9,844
RFQ

Datasheet

EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIR516DP-T1-BE3 Vishay Siliconix electronic component

SIR516DP-T1-BE3

N-CHANNEL 100 V (D-S) MOSFET 150

Vishay Siliconix

8,291
RFQ

Datasheet

TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 16.8A (Ta), 63.7A (Tc) 7.5V, 10V 8mOhm @ 10A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 1920 pF @ 50 V - 5W (Ta), 71.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
PJQ5568A-AU_R2_002A1 Panjit International Inc. electronic component

PJQ5568A-AU_R2_002A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

9,924
RFQ

Datasheet

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IAUCN08S7L110ATMA1 Infineon Technologies electronic component

IAUCN08S7L110ATMA1

IAUCN08S7L110ATMA1

Infineon Technologies

6,745
RFQ

-

OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 50A (Tj) 4.5V, 10V 11mOhm @ 20A, 10V 2V @ 14µA 19.3 nC @ 10 V ±16V 1056 pF @ 40 V - 58W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-34
SIR582DP-T1-BE3 Vishay Siliconix electronic component

SIR582DP-T1-BE3

N-CHANNEL 80 V (D-S) MOSFET 150

Vishay Siliconix

9,954
RFQ

Datasheet

TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 28.9A (Ta), 116A (Tc) 7.5V, 10V 3.4mOhm @ 15A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 3360 pF @ 40 V - 5.6W (Ta), 92.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
TK3A65DA(STA4,QM) Toshiba Semiconductor and Storage electronic component

TK3A65DA(STA4,QM)

MOSFET N-CH 650V 2.5A TO220SIS

Toshiba Semiconductor and Storage

3,536
RFQ

Datasheet

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 2.5A (Ta) 10V 2.51Ohm @ 1.3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
NVTYS006N06CLTWG onsemi electronic component

NVTYS006N06CLTWG

T6 60V N-CH LL IN LFPAK33

onsemi

9,817
RFQ

Datasheet

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 16A (Ta), 71A (Tc) 4.5V, 10V 6.8mOhm @ 35A, 10V 2V @ 53µA 19 nC @ 10 V ±20V 1330 pF @ 25 V - 3.2W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
IAUCN10S7L180ATMA1 Infineon Technologies electronic component

IAUCN10S7L180ATMA1

IAUCN10S7L180ATMA1

Infineon Technologies

4,477
RFQ

-

OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 39A (Tj) 4.5V, 10V 18mOhm @ 20A, 10V 2V @ 14µA 14.3 nC @ 10 V ±16V 868 pF @ 50 V - 58W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-34
PSMD081N10LS2_L2_00601 Panjit International Inc. electronic component

PSMD081N10LS2_L2_00601

Exc FOM/100V/8.1m /TO-252AA

Panjit International Inc.

6,935
RFQ

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJQ5451E-AU_R2_006A1 Panjit International Inc. electronic component

PJQ5451E-AU_R2_006A1

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,244
RFQ

Datasheet

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TK8R2E06PL,S1X Toshiba Semiconductor and Storage electronic component

TK8R2E06PL,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

9,416
RFQ

Datasheet

U-MOSIX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.2mOhm @ 25A, 10V 2.5V @ 300µA 28 nC @ 10 V ±20V 1990 pF @ 30 V - 81W (Tc) 175°C - - Through Hole TO-220
NVMFWS2D3N04XMT1G onsemi electronic component

NVMFWS2D3N04XMT1G

40V T10M IN S08FL PACKAGE

onsemi

3,349
RFQ

Datasheet

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 29A (Ta), 121A (Tc) 10V 2.35mOhm @ 20A, 10V 3.5V @ 60µA 22.2 nC @ 10 V ±20V 1417 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
ISZ028N03LF2SATMA1 Infineon Technologies electronic component

ISZ028N03LF2SATMA1

ISZ028N03LF2SATMA1

Infineon Technologies

2,499
RFQ

Datasheet

StrongIRFET™ 2 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 128A (Tc) 4.5V, 10V 2.8mOhm @ 20A, 10V 2.35V @ 30µA 19 nC @ 4.5 V ±20V 1780 pF @ 15 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSDSON-8 FL
TK5A65W,S5X Toshiba Semiconductor and Storage electronic component

TK5A65W,S5X

MOSFET N-CH 650V 5.2A TO220SIS

Toshiba Semiconductor and Storage

8,447
RFQ

Datasheet

DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Ta) 10V 1.2Ohm @ 2.6A, 10V 3.5V @ 170µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK3A90E,S4X Toshiba Semiconductor and Storage electronic component

TK3A90E,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

8,738
RFQ

Datasheet

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Ta) 10V 4.6Ohm @ 1.3A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 650 pF @ 25 V - 35W (Tc) 150°C - - Through Hole TO-220SIS
TK6A45DA(STA4,Q,M) Toshiba Semiconductor and Storage electronic component

TK6A45DA(STA4,Q,M)

MOSFET N-CH 450V 5.5A TO220SIS

Toshiba Semiconductor and Storage

21
RFQ

Datasheet

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 5.5A (Ta) 10V 1.35Ohm @ 2.8A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - - 150°C (TJ) - - Through Hole TO-220SIS
NVTYS003N04CTWG onsemi electronic component

NVTYS003N04CTWG

T6 40V N-CH SL IN LFPAK33

onsemi

8,349
RFQ

Datasheet

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 99A (Tc) 10V 3.9mOhm @ 50A, 10V 3.5V @ 60µA 24 nC @ 10 V ±20V 1600 pF @ 25 V - 3.2W (Ta), 69W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
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FETs, MOSFETs Electronic Components

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