FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IXFH78N60X3 MOSFET ULTRA JCT 600V 78A TO247 Littelfuse Inc.	7,083	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	78A	10V	38mOhm @ 39A, 10V	5V @ 4mA	70 nC @ 10 V	±20V	4700 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
APT77N60BC6 MOSFET N-CH 600V 77A TO247 Microchip Technology	3	RFQ	Datasheet	CoolMOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	77A (Tc)	10V	41mOhm @ 44.4A, 10V	3.6V @ 2.96mA	260 nC @ 10 V	±20V	13600 pF @ 25 V	-	481W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
SIHG80N60E-GE3 MOSFET N-CH 600V 80A TO247AC Vishay Siliconix	2,363	RFQ	Datasheet	E	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	80A (Tc)	10V	30mOhm @ 40A, 10V	4V @ 250µA	443 nC @ 10 V	±30V	6900 pF @ 100 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
STW75N65DM6-4 N-CHANNEL 650 V, 33 MOHM TYP., 7 STMicroelectronics	4,564	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	75A (Tc)	10V	36mOhm @ 37.5A, 10V	4.75V @ 250µA	118 nC @ 10 V	±25V	5700 pF @ 100 V	-	480W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4
SCT040H65G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	5,733	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	30A (Tc)	15V, 18V	55mOhm @ 20A, 18V	4.2V @ 1mA	39.5 nC @ 18 V	+18V, -5V	920 pF @ 400 V	-	221W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7
IPW65R037C6FKSA1 MOSFET N-CH 650V 83.2A TO247-3 Infineon Technologies	4,974	RFQ	Datasheet	CoolMOS™ C6	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	83.2A (Tc)	10V	37mOhm @ 33.1A, 10V	3.5V @ 3.3mA	330 nC @ 10 V	±20V	7240 pF @ 100 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3
IXFX180N15P MOSFET N-CH 150V 180A PLUS247-3 Littelfuse Inc.	5	RFQ	Datasheet	HiPerFET™, Polar	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	180A (Tc)	10V	11mOhm @ 90A, 10V	5V @ 4mA	240 nC @ 10 V	±20V	7000 pF @ 25 V	-	830W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PLUS247™-3
SCT3105KLGC11 SICFET N-CH 1200V 24A TO247N Rohm Semiconductor	5,672	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	24A (Tc)	18V	137mOhm @ 7.6A, 18V	5.6V @ 3.81mA	51 nC @ 18 V	+22V, -4V	574 pF @ 800 V	-	134W	175°C (TJ)	-	-	Through Hole	TO-247N
SCTW35N65G2V SICFET N-CH 650V 45A HIP247 STMicroelectronics	3,437	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	45A (Tc)	18V, 20V	67mOhm @ 20A, 20V	5V @ 1mA	73 nC @ 20 V	+22V, -10V	1370 pF @ 400 V	-	240W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	HiP247™
TK62J60W,S1VQ MOSFET N-CH 600V 61.8A TO3P Toshiba Semiconductor and Storage	2	RFQ	Datasheet	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61.8A (Ta)	10V	38mOhm @ 30.9A, 10V	3.7V @ 3.1mA	180 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3P(N)
SCTW35N65G2VAG SICFET N-CH 650V 45A HIP247 STMicroelectronics	6,169	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	45A (Tc)	18V, 20V	67mOhm @ 20A, 20V	5V @ 1mA	73 nC @ 20 V	+22V, -10V	1370 pF @ 400 V	-	240W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	HiP247™
STW40N95DK5 MOSFET N-CHANNEL 950V 38A TO247 STMicroelectronics	2,536	RFQ	Datasheet	MDmesh™ DK5	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	950 V	38A (Tc)	10V	130mOhm @ 19A, 10V	5V @ 100µA	100 nC @ 10 V	±30V	3480 pF @ 100 V	-	450W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247
SCTH40N120G2V-7 SILICON CARBIDE POWER MOSFET 120 STMicroelectronics	8,172	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	18V	100mOhm @ 20A, 18V	4.9V @ 1mA	61 nC @ 18 V	+22V, -10V	1233 pF @ 800 V	-	238W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	H2PAK-7
IXFK66N85X MOSFET N-CH 850V 66A TO264 Littelfuse Inc.	7,255	RFQ	Datasheet	HiPerFET™, Ultra X	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	850 V	66A (Tc)	10V	65mOhm @ 500mA, 10V	5.5V @ 8mA	230 nC @ 10 V	±30V	8900 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA
IXTH12N150 MOSFET N-CH 1500V 12A TO247 Littelfuse Inc.	9,759	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1500 V	12A (Tc)	10V	2Ohm @ 6A, 10V	4.5V @ 250µA	106 nC @ 10 V	±30V	3720 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IXFK170N25X3 MOSFET N-CH 250V 170A TO264 Littelfuse Inc.	2	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	170A (Tc)	10V	7.4mOhm @ 85A, 10V	4.5V @ 4mA	190 nC @ 10 V	±20V	13500 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA
IXFK20N120P MOSFET N-CH 1200V 20A TO264AA IXYS	3	RFQ	Datasheet	HiPerFET™, Polar	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	20A (Tc)	10V	570mOhm @ 10A, 10V	6.5V @ 1mA	193 nC @ 10 V	±30V	11100 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)
APT31M100L MOSFET N-CH 1000V 32A TO264 Microchip Technology	9,029	RFQ	Datasheet	POWER MOS 8™	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	32A (Tc)	10V	400mOhm @ 16A, 10V	5V @ 2.5mA	260 nC @ 10 V	±30V	8500 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264
SCTH40N120G2V7AG SICFET N-CH 1200V 33A H2PAK-7 STMicroelectronics	5,870	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	33A (Tc)	18V	105mOhm @ 20A, 18V	5V @ 1mA	63 nC @ 18 V	+22V, -10V	1230 pF @ 800 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7
IXFJ26N50P3 MOSFET N-CH 500V 14A TO247 Littelfuse Inc.	19	RFQ	Datasheet	HiPerFET™, Polar3™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	14A (Tc)	10V	265mOhm @ 13A, 10V	5V @ 4mA	42 nC @ 10 V	±30V	2220 pF @ 25 V	-	180W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)

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FETs, MOSFETs Electronic Components

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