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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AM4499P Analog Power Inc. electronic component

AM4499P

MOSFET P-CH 60V 6.8A SOIC-8

Analog Power Inc.

2,300
RFQ

Datasheet

- 8-SOIC (0.154", 3.90mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 60 V 6.8A (Ta) 4.5V, 10V 45mOhm @ 5.4A, 10V 1V @ 250µA 24 nC @ 4.5 V ±20V 1725 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
G75P04K Goford Semiconductor electronic component

G75P04K

MOSFET P-CH 40V 70A TO-252

Goford Semiconductor

15,000
RFQ

Datasheet

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) - 70A (Tc) 10V 10mOhm @ 10A, 20V 2.5V @ 250µA - ±20V - - 130W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
FDME820NZT Fairchild Semiconductor electronic component

FDME820NZT

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

9,500
RFQ

Datasheet

PowerTrench® 6-PowerUFDFN Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 9A (Ta) 1.8V, 4.5V 18mOhm @ 9A, 4.5V 1V @ 250µA 8.5 nC @ 4.5 V ±12V 865 pF @ 10 V - 2.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount MicroFet 1.6x1.6 Thin
AM2390N Analog Power Inc. electronic component

AM2390N

MOSFET N-CH 150V 1.9A SOT-23

Analog Power Inc.

3,000
RFQ

Datasheet

- TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 1.1A (Ta) 4.5V, 10V 700mOhm @ 1.1A, 10V 1V @ 250µA 3.5 nC @ 4.5 V ±20V 356 pF @ 15 V - 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
FDFM2P110 Fairchild Semiconductor electronic component

FDFM2P110

MOSFET P-CH 20V 3.5A MICROFET

Fairchild Semiconductor

2,879
RFQ

Datasheet

PowerTrench® 6-WDFN Exposed Pad Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 2.5V, 4.5V 140mOhm @ 3.5A, 4.5V 1.5V @ 250µA 4 nC @ 4.5 V ±12V 280 pF @ 10 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount MicroFET 3x3mm
FDS6670A Fairchild Semiconductor electronic component

FDS6670A

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

2,525
RFQ

Datasheet

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 8mOhm @ 13A, 10V 3V @ 250µA 30 nC @ 5 V ±20V 2220 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
AM7330N Analog Power Inc. electronic component

AM7330N

MOSFET N-CH 30V 19A DFN3X3

Analog Power Inc.

2,000
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
2SJ635-TL-E onsemi electronic component

2SJ635-TL-E

2SJ635 - P-CHANNEL SILICON MOSFE

onsemi

1,600
RFQ

Datasheet

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) 4V, 10V 60mOhm @ 6A, 10V 2.6V @ 1mA 45 nC @ 10 V ±20V 2200 pF @ 20 V - 1W (Ta), 30W (Tc) 150°C - - Through Hole TP
GT105N10F Goford Semiconductor electronic component

GT105N10F

MOSFET N-CH 100V 33A TO-220F

Goford Semiconductor

60,000
RFQ

Datasheet

SGT TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) - 33A (Tc) 4.5V, 10V 10.5mOhm @ 11A, 10V 2.5V @ 250µA - ±20V - - 20.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
NTTFS4C02NTAG-01 Flip Electronics electronic component

NTTFS4C02NTAG-01

N-Channel 30 V 170A (Tc) 91W (Tc

Flip Electronics

4,416,000
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
NTMFS4C09NAT1G-01 Flip Electronics electronic component

NTMFS4C09NAT1G-01

N-Channel 30 V 9A (Ta), 52A (Tc)

Flip Electronics

1,447,077
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
FDD8770 Fairchild Semiconductor electronic component

FDD8770

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor

41,479
RFQ

Datasheet

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 25 V 35A (Tc) 4.5V, 10V 4mOhm @ 35A, 10V 2.5V @ 250µA 73 nC @ 10 V ±20V 3720 pF @ 13 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
FQU8P10TU Fairchild Semiconductor electronic component

FQU8P10TU

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor

27,370
RFQ

Datasheet

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 6.6A (Tc) 10V 530mOhm @ 3.3A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 470 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
FDS8817NZ-G onsemi electronic component

FDS8817NZ-G

30V N-CHANNEL POWERTRENCH MOSFET

onsemi

25,000
RFQ

-

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 7mOhm @ 15A, 10V 3V @ 250µA 45 nC @ 10 V ±20V 2400 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NTMFS4C09NBT1G-01 Flip Electronics electronic component

NTMFS4C09NBT1G-01

N-Channel 30 V 9A (Ta), 52A (Tc)

Flip Electronics

11,970
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
IPI45N06S4L08AKSA2 Infineon Technologies electronic component

IPI45N06S4L08AKSA2

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies

11,000
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
PSMN018-100ESFQ NXP Semiconductors electronic component

PSMN018-100ESFQ

NEXPERIA PSMN018 - NEXTPOWER 100

NXP Semiconductors

4,976
RFQ

Datasheet

- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 53A (Ta) 7V, 10V 18mOhm @ 15A, 10V 4V @ 1mA 21.4 nC @ 10 V ±20V 1482 pF @ 50 V - 111W (Ta) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
GT150N12T Goford Semiconductor electronic component

GT150N12T

MOSFET N-CH 120V 55A TO-220

Goford Semiconductor

4,000
RFQ

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 55A (Tc) 10V 18mOhm @ 20A, 10V 4.5V @ 250µA 22 nC @ 10 V ±20V 1596 pF @ 60 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
IRLR2905ZTRLPBF International Rectifier electronic component

IRLR2905ZTRLPBF

MOSFET N-CH 55V 42A DPAK

International Rectifier

1,225
RFQ

Datasheet

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 13.5mOhm @ 36A, 10V 3V @ 250µA 35 nC @ 5 V ±16V 1570 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
GT105N10T Goford Semiconductor electronic component

GT105N10T

MOSFET N-CH 100V 55A TO-220

Goford Semiconductor

10,000
RFQ

Datasheet

SGT TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) - 55A (Tc) 4.5V, 10V 10.5mOhm @ 35A, 10V 2.5V @ 250µA - ±20V - - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
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FETs, MOSFETs Electronic Components

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