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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPS70R2K0CEE8211AKMA1 Infineon Technologies electronic component

IPS70R2K0CEE8211AKMA1

IPS70R2K0CE - 700V COOLMOS N-CHA

Infineon Technologies

40,500
RFQ

Datasheet

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BUK6209-30C,118 Nexperia USA Inc. electronic component

BUK6209-30C,118

NEXPERIA BUK6209-30C - 50A, 30V,

Nexperia USA Inc.

12,000
RFQ

Datasheet

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Ta) - 9.8mOhm @ 12A, 10V 2.8V @ 1mA 30.5 nC @ 10 V ±16V 1760 pF @ 25 V - 80W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
NTMFS4C13NBT1G onsemi electronic component

NTMFS4C13NBT1G

NTMFS4C13N - MOSFET SO8FL 30V 38

onsemi

6,286
RFQ

Datasheet

- 8-PowerTDFN, 5 Leads Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.2A (Ta), 38A (Tc) 4.5V, 10V 9.1mOhm @ 30A, 10V 2.1V @ 250µA 15.2 nC @ 10 V ±20V 770 pF @ 15 V - 750mW (Ta), 21.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
G58N06K Goford Semiconductor electronic component

G58N06K

MOSFET N-CH 60V 58A TO-252

Goford Semiconductor

2,500
RFQ

Datasheet

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 58A (Tc) 4.5V, 10V 13mOhm @ 30A, 10V 2.5V @ 250µA - ±20V - - 71W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
25P06 Goford Semiconductor electronic component

25P06

MOSFET P-CH 60V 25A TO-252

Goford Semiconductor

20,000
RFQ

Datasheet

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) - 25A (Tc) 10V 32mOhm @ 12A, 10V 3V @ 250µA - ±20V - - 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT700P08K Goford Semiconductor electronic component

GT700P08K

MOSFET P-CH 80V 20A 125W 75m(max

Goford Semiconductor

10,000
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 72mOhm @ 2A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 1615 pF @ 40 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G300P06D5 Goford Semiconductor electronic component

G300P06D5

MOSFET P-CH 60V 40A DFN5*6-8L

Goford Semiconductor

25,000
RFQ

Datasheet

TrenchFET® 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) - 40A (Tc) 10V 30mOhm @ 10A, 10V 3V @ 250µA - ±20V 2705 pF @ 30 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
FDZ193P Fairchild Semiconductor electronic component

FDZ193P

MOSFET P-CH 20V 3A 6WLCSP

Fairchild Semiconductor

434,038
RFQ

Datasheet

PowerTrench® 6-UFBGA, WLCSP Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.7V, 4.5V 90mOhm @ 1A, 4.5V 1.5V @ 250µA 10 nC @ 10 V ±12V 660 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-WLCSP (1x1.5)
PH5830DLX NXP USA Inc. electronic component

PH5830DLX

PH5830 - N-CHANNEL TRENCHMOS LOG

NXP USA Inc.

152,950
RFQ

Datasheet

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BUK6213-30C,118 Nexperia USA Inc. electronic component

BUK6213-30C,118

NEXPERIA BUK6213-30C - 47A, 30V,

Nexperia USA Inc.

140,500
RFQ

Datasheet

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Tc) 10V 14mOhm @ 10A, 10V 2.8V @ 1mA 19.5 nC @ 10 V ±16V 1108 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
PH5830DL,115 NXP USA Inc. electronic component

PH5830DL,115

PH5830 - N-CHANNEL TRENCHMOS LOG

NXP USA Inc.

106,500
RFQ

Datasheet

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GT090N06K Goford Semiconductor electronic component

GT090N06K

MOSFET N-CH 60V 45A TO-252

Goford Semiconductor

40,000
RFQ

Datasheet

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 45A (Tc) 4.5V, 10V 9mOhm @ 14A, 10V 2.4V @ 250µA - ±20V 1088 pF @ 30 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
BUK6213-30C,118 NXP Semiconductors electronic component

BUK6213-30C,118

NEXPERIA BUK6213-30C - 47A, 30V,

NXP Semiconductors

17,100
RFQ

Datasheet

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Tc) 10V 14mOhm @ 10A, 10V 2.8V @ 1mA 19.5 nC @ 10 V ±16V 1108 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
FDC855N Fairchild Semiconductor electronic component

FDC855N

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

4,528
RFQ

Datasheet

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 6.1A (Ta) 4.5V, 10V 27mOhm @ 6.1A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 655 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
NTTFS4930NTAG Fairchild Semiconductor electronic component

NTTFS4930NTAG

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor

4,500
RFQ

Datasheet

- 8-PowerWDFN Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 4.5A (Ta), 23A (Tc) 4.5V, 10V 23mOhm @ 6A, 10V 2.2V @ 250µA 5.5 nC @ 4.5 V ±20V 476 pF @ 15 V - 790mW (Ta), 20.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
PH2525L,115 NXP Semiconductors electronic component

PH2525L,115

NEXPERIA PH2525L - 100A, 25V, 0.

NXP Semiconductors

4,100
RFQ

Datasheet

TrenchMOS™ SC-100, SOT-669 Bulk Active N-Channel MOSFET (Metal Oxide) 25 V 100A (Tc) 4.5V, 10V 2.5mOhm @ 25A, 10V 2.15V @ 1mA 34.7 nC @ 4.5 V ±20V 4470 pF @ 12 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount LFPAK56, Power-SO8
AM2301P Analog Power Inc. electronic component

AM2301P

MOSFET P-CH -20V 2.6A SOT-23

Analog Power Inc.

3,500
RFQ

Datasheet

- TO-236-3, SC-59, SOT-23-3 Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 2.5V, 4.5V 130mOhm @ 2.3A, 4.5V 400mV @ 250µA 10 nC @ 4.5 V ±8V 674 pF @ 15 V - 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
FDMS0312S Fairchild Semiconductor electronic component

FDMS0312S

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

3,234
RFQ

Datasheet

PowerTrench®, SyncFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 42A (Tc) 4.5V, 10V 4.9mOhm @ 18A, 10V 3V @ 1mA 46 nC @ 10 V ±20V 2820 pF @ 15 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
AM3467P Analog Power Inc. electronic component

AM3467P

MOSFET P-CH 60V 5A TSOP-6

Analog Power Inc.

3,200
RFQ

Datasheet

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PH1030DLSX NXP USA Inc. electronic component

PH1030DLSX

POWER MOS

NXP USA Inc.

1,400
RFQ

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FETs, MOSFETs Electronic Components

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