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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
RJK60S5DPK-M0#T0 Renesas Electronics Corporation electronic component

RJK60S5DPK-M0#T0

MOSFET N-CH 600V 20A TO3PSG

Renesas Electronics Corporation

68,097
RFQ

Datasheet

- TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) - 178mOhm @ 10A, 10V - 27 nC @ 10 V - 1600 pF @ 25 V - - - - - Through Hole TO-3PSG
RJK60S5DPE-00#J3 Renesas Electronics Corporation electronic component

RJK60S5DPE-00#J3

MOSFET N-CH 600V 20A 4LDPAK

Renesas Electronics Corporation

40,000
RFQ

Datasheet

- SC-83 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) - 178mOhm @ 10A, 10V - 27 nC @ 10 V - 1600 pF @ 25 V - 125W (Tc) 150°C (TJ) - - Surface Mount LDPAK
RJK60S5DPP-E0#T2 Renesas Electronics Corporation electronic component

RJK60S5DPP-E0#T2

MOSFET N-CH 600V 20A TO220FP

Renesas Electronics Corporation

226
RFQ

Datasheet

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) - 178mOhm @ 10A, 10V - 27 nC @ 10 V - 1600 pF @ 25 V - 33.7W (Tc) 150°C (TJ) - - Through Hole TO-220FP
C3M0040120J2-TR Wolfspeed, Inc. electronic component

C3M0040120J2-TR

WOLFSPEED SIC, MOSFET

Wolfspeed, Inc.

589
RFQ

-

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active - - - - - - - - - - - - - - - Surface Mount TO-263-7
CGD65A055S2-T07 Cambridge GaN Devices electronic component

CGD65A055S2-T07

650V GAN HEMT, 55MOHM, DFN8X8. W

Cambridge GaN Devices

674
RFQ

Datasheet

ICeGaN™ 16-PowerVDFN Cut Tape (CT) Active - GaNFET (Gallium Nitride) 650 V 27A (Tc) 12V 77mOhm @ 2.2A, 12V 4.2V @ 10mA 6 nC @ 12 V +20V, -1V - Current Sensing - -55°C ~ 150°C (TJ) - - Surface Mount 16-DFN (8x8)
SCT3080KRC14 Rohm Semiconductor electronic component

SCT3080KRC14

SICFET N-CH 1200V 31A TO247-4L

Rohm Semiconductor

270
RFQ

Datasheet

- TO-247-4 Tube Last Time Buy N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W 175°C (TJ) - - Through Hole TO-247-4L
N3T035MP120D NoMIS Power electronic component

N3T035MP120D

1200 V, 76A SIC MOSFET, TO-247

NoMIS Power

652
RFQ

Datasheet

1200 TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 76A 20V 45mOhm @ 30A, 20V 3V @ 15mA 126 nC @ 20 V +20V, -5V 2204 pF @ 800 V - 319W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
4AM17-91 Renesas Electronics Corporation electronic component

4AM17-91

POWER N AND P CHANNEL MOSFETS

Renesas Electronics Corporation

38,812
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
H5N2513PL-E Renesas Electronics Corporation electronic component

H5N2513PL-E

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,189
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
G3R40MT12J GeneSiC Semiconductor electronic component

G3R40MT12J

SIC MOSFET N-CH 75A TO263-7

GeneSiC Semiconductor

421
RFQ

Datasheet

G3R™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 75A (Tc) 15V 48mOhm @ 35A, 15V 2.7V @ 18mA (Typ) 106 nC @ 15 V ±15V 2929 pF @ 800 V - 374W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
FCH085N80-F155 onsemi electronic component

FCH085N80-F155

MOSFET N-CH 800V 46A TO247

onsemi

437
RFQ

Datasheet

SuperFET® II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 46A (Tc) 10V 85mOhm @ 23A, 10V 4.5V @ 4.6mA 255 nC @ 10 V ±20V 10825 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
NVBGS4D1N15MC onsemi electronic component

NVBGS4D1N15MC

MOSFET N-CH 150V 20A/185A D2PAK

onsemi

364
RFQ

Datasheet

- TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150 V 20A (Ta), 185A (Tc) 8V, 10V 4.1mOhm @ 104A, 10V 4.5V @ 574µA 88.9 nC @ 10 V ±20V 7285 pF @ 75 V - 3.7W (Ta), 316W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
S3M0025120T SMC Diode Solutions electronic component

S3M0025120T

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

200
RFQ

Datasheet

- 8-PowerSFN Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 77A (Tc) 18V 32mOhm @ 48A, 18V 4V @ 20mA 175 nC @ 18 V +22V, -8V 3519 pF @ 1000 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TOLL
H5N5011PL-E Renesas Electronics Corporation electronic component

H5N5011PL-E

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,086
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
G2R1000MT33J GeneSiC Semiconductor electronic component

G2R1000MT33J

SIC MOSFET N-CH 4A TO263-7

GeneSiC Semiconductor

1,853
RFQ

Datasheet

G2R™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 3300 V 4A (Tc) 20V 1.2Ohm @ 2A, 20V 3.5V @ 2mA 21 nC @ 20 V +20V, -5V 238 pF @ 1000 V - 74W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
FCA76N60N onsemi electronic component

FCA76N60N

MOSFET N-CH 600V 76A TO3PN

onsemi

1,348
RFQ

Datasheet

SupreMOS™ TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 76A (Tc) 10V 36mOhm @ 38A, 10V 4V @ 250µA 285 nC @ 10 V ±30V 12385 pF @ 100 V - 543W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN
E3M0045065K Wolfspeed, Inc. electronic component

E3M0045065K

SIC, MOSFET, 45M, 650V, TO-247-4

Wolfspeed, Inc.

359
RFQ

Datasheet

E TO-247-4 Tube Last Time Buy N-Channel SiCFET (Silicon Carbide) 650 V 46A (Tc) 15V 60mOhm @ 17.6A, 15V 3.6V @ 4.84mA 64 nC @ 15 V +19V, -8V 1593 pF @ 400 V - 150W (Tc) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
C3M0032120J2-TR Wolfspeed, Inc. electronic component

C3M0032120J2-TR

MOSFET N-CH 1200V 68A TO263

Wolfspeed, Inc.

575
RFQ

-

C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 15V - 3.6V @ 11.5mA 111 nC @ 15 V -8V, +19V 3424 pF @ 1000 V - 277W (Tc) -40°C ~ 175°C (TJ) - - Surface Mount TO-263-7
4AK17-91 Renesas Electronics Corporation electronic component

4AK17-91

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

29,649
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
FF12040J-7 fastSiC electronic component

FF12040J-7

SICFET N-CH 1200V 45A TO-263-7L

fastSiC

278
RFQ

Datasheet

Falcon TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 45A (Tc) 15V, 18V 56mOhm @ 20A, 18V 2.5V @ 40mA (Typ) 117 nC @ 800 V +18V, -8V 3129 pF @ 800 V - 187W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7L
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FETs, MOSFETs Electronic Components

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