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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FDB029N06 onsemi electronic component

FDB029N06

MOSFET N-CH 60V 120A D2PAK

onsemi

2,752
RFQ

Datasheet

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.1mOhm @ 75A, 10V 4.5V @ 250µA 151 nC @ 10 V ±20V 9815 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
STP34N65M5 STMicroelectronics electronic component

STP34N65M5

MOSFET N-CH 650V 28A TO220

STMicroelectronics

241
RFQ

Datasheet

MDmesh™ V TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 110mOhm @ 14A, 10V 5V @ 250µA 62.5 nC @ 10 V ±25V 2700 pF @ 100 V - 190W (Tc) 150°C (TJ) - - Through Hole TO-220
IRFP31N50LPBF Vishay Siliconix electronic component

IRFP31N50LPBF

MOSFET N-CH 500V 31A TO247-3

Vishay Siliconix

1,148
RFQ

-

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 31A (Tc) 10V 180mOhm @ 19A, 10V 5V @ 250µA 210 nC @ 10 V ±30V 5000 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
STF21NM60ND STMicroelectronics electronic component

STF21NM60ND

MOSFET N-CH 600V 17A TO220FP

STMicroelectronics

689
RFQ

Datasheet

FDmesh™ II TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 220mOhm @ 8.5A, 10V 5V @ 250µA 60 nC @ 10 V ±25V 1800 pF @ 50 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220FP
MTW24N40E onsemi electronic component

MTW24N40E

N-CHANNEL POWER MOSFET

onsemi

2,556
RFQ

Datasheet

- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 24A (Tc) 10V 160mOhm @ 12A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 5600 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
STW24NM60N STMicroelectronics electronic component

STW24NM60N

MOSFET N-CH 600V 17A TO247

STMicroelectronics

1,144
RFQ

Datasheet

MDmesh™ II TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 190mOhm @ 8A, 10V 4V @ 250µA 46 nC @ 10 V ±30V 1400 pF @ 50 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
IPP018N10N5AKSA1 Infineon Technologies electronic component

IPP018N10N5AKSA1

TRENCH >=100V

Infineon Technologies

460
RFQ

Datasheet

OptiMOS™ 5 TO-220-3 Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 33A (Ta), 205A (Tc) 6V, 10V 1.83mOhm @ 100A, 10V 3.8V @ 270µA 210 nC @ 10 V ±20V 16000 pF @ 50 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
FCA20N60 onsemi electronic component

FCA20N60

MOSFET N-CH 600V 20A TO3PN

onsemi

445
RFQ

Datasheet

SuperFET™ TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN
SIHW30N60E-GE3 Vishay Siliconix electronic component

SIHW30N60E-GE3

MOSFET N-CH 600V 29A TO247AD

Vishay Siliconix

145
RFQ

Datasheet

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
IPZ65R095C7XKSA1 Infineon Technologies electronic component

IPZ65R095C7XKSA1

MOSFET N-CH 650V 24A TO247-4

Infineon Technologies

220
RFQ

Datasheet

CoolMOS™ C7 TO-247-4 Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
IRFAF50 International Rectifier electronic component

IRFAF50

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier

644
RFQ

Datasheet

HEXFET® TO-204AA, TO-3 Bulk Active N-Channel MOSFET (Metal Oxide) 900 V 6.2A (Tc) 10V 1.85Ohm @ 6.2A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 2700 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-204AA (TO-3)
IRFAF52 International Rectifier electronic component

IRFAF52

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier

172
RFQ

Datasheet

- TO-204AA, TO-3 Bulk Active N-Channel MOSFET (Metal Oxide) 900 V 5.7A - - - - - - - 150W - - - Through Hole TO-204AA (TO-3)
RJK5020DPK01-E Renesas Electronics Corporation electronic component

RJK5020DPK01-E

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

451
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
STB36NM60ND STMicroelectronics electronic component

STB36NM60ND

MOSFET N-CH 600V 29A D2PAK

STMicroelectronics

472
RFQ

Datasheet

FDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 110mOhm @ 14.5A, 10V 5V @ 250µA 80.4 nC @ 10 V ±25V 2785 pF @ 50 V - 190W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
STB180N55F3 STMicroelectronics electronic component

STB180N55F3

MOSFET N-CH 55V 120A D2PAK

STMicroelectronics

2,169
RFQ

Datasheet

STripFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 3.5mOhm @ 60A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 6800 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
STB21NM60ND STMicroelectronics electronic component

STB21NM60ND

MOSFET N-CH 600V 17A D2PAK

STMicroelectronics

425
RFQ

Datasheet

FDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 220mOhm @ 8.5A, 10V 5V @ 250µA 60 nC @ 10 V ±25V 1800 pF @ 50 V - 140W (Tc) 150°C (TJ) - - Surface Mount D2PAK
RJL60S5DPP-E0#T2 Renesas Electronics Corporation electronic component

RJL60S5DPP-E0#T2

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

45,900
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
MSC360SMA120S Microchip Technology electronic component

MSC360SMA120S

MOSFET SIC 1200 V 360 MOHM TO-26

Microchip Technology

205
RFQ

Datasheet

- - Tube Active - - - - - - - - - - - - - - - - -
CGD65B130S2-T13 Cambridge GaN Devices electronic component

CGD65B130S2-T13

650V GAN HEMT, 130MOHM, DFN5X6.

Cambridge GaN Devices

4,875
RFQ

Datasheet

ICeGaN™ 8-PowerVDFN Cut Tape (CT) Active - GaNFET (Gallium Nitride) 650 V 12A (Tc) 9V, 20V 182mOhm @ 900mA, 12V 4.2V @ 4.2mA 2.3 nC @ 12 V +20V, -1V - Current Sensing - -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
G3R160MT12J GeneSiC Semiconductor electronic component

G3R160MT12J

SIC MOSFET N-CH 19A TO263-7

GeneSiC Semiconductor

415
RFQ

Datasheet

G3R™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 19A (Tc) 15V 208mOhm @ 10A, 15V 2.7V @ 5mA (Typ) 23 nC @ 15 V +20V, -10V 724 pF @ 800 V - 128W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
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FETs, MOSFETs Electronic Components

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