FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
CSD17555Q5A MOSFET N-CH 30V 24A/100A 8VSON Texas Instruments	9,026	RFQ	Datasheet	NexFET™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	24A (Ta), 100A (Tc)	4.5V, 10V	2.7mOhm @ 25A, 10V	1.9V @ 250µA	28 nC @ 4.5 V	±20V	4650 pF @ 15 V	-	3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-VSONP (5x6)
AUIRF1324 MOSFET N-CH 24V 195A TO220AB Infineon Technologies	3,035	RFQ	Datasheet	HEXFET®	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	24 V	195A (Tc)	10V	1.5mOhm @ 195A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	7590 pF @ 24 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
FDT86256 MOSFET N-CH 150V 1.2A/3A SOT223 onsemi	800	RFQ	Datasheet	PowerTrench®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	1.2A (Ta), 3A (Tc)	6V, 10V	845mOhm @ 1.2A, 10V	4V @ 250µA	2 nC @ 10 V	±20V	73 pF @ 75 V	-	2.3W (Ta), 10W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-4
NP90N03VUG-E1-AY MOSFET N-CH 30V 90A TO252 Renesas Electronics Corporation	10,000	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	90A (Tc)	-	3.2mOhm @ 45A, 10V	4V @ 250µA	135 nC @ 10 V	-	7500 pF @ 25 V	-	1.2W (Ta), 105W (Tc)	175°C (TJ)	-	-	Surface Mount	TO-252
2SK2596BXTL-E MOSFET N-CH Renesas Electronics Corporation	6,900	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2731T1A-E1-AZ P-CHANNEL POWER MOSFET Renesas Electronics Corporation	6,000	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIRC16DP-T1-RE3 N-CHANNEL 25-V (D-S) MOSFET W/SC Vishay Siliconix	5,880	RFQ	Datasheet	-	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	25 V	57A (Ta), 60A (Tc)	4.5V, 10V	0.96mOhm @ 15A, 10V	2.4V @ 250µA	105 nC @ 10 V	+20V, -16V	5150 pF @ 10 V	Schottky Diode (Body)	5W (Ta), 54.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
GT2K0P20D5 MOSFET P-CH 200V 19A 138W 200M(M Goford Semiconductor	5,000	RFQ	-	SGT	8-PowerTDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	200 V	19A (Tc)	10V, 4.5V	200mOhm @ 15A, 10V	3V @ 250µA	70 nC @ 10 V	20V	3400 pF @ 100 V	-	138W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)
IRF4905STRL MOSFET P-CH 55V 42A D2PAK UMW	2,500	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	55 V	42A (Tc)	10V	20mOhm @ 42A, 10V	2.5V @ 250µA	180 nC @ 10 V	±20V	3500 pF @ 25 V	-	170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263-3
GSFT4R010 MOSFET, N-CH, SINGLE, 120.00A, 1 Good-Ark Semiconductor	2,370	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Ta)	10V	4mOhm @ 50A, 10V	3.9V @ 250µA	140 nC @ 10 V	±20V	8200 pF @ 50 V	-	208W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRFU5410PBF MOSFET P-CH 100V 13A IPAK Infineon Technologies	2,232	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Last Time Buy	P-Channel	MOSFET (Metal Oxide)	100 V	13A (Tc)	10V	205mOhm @ 7.8A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	760 pF @ 25 V	-	66W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)
GT100N12T N120V,RD(MAX)<10M@10V,VTH2.5V~3. Goford Semiconductor	168	RFQ	Datasheet	SGT	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120 V	70A (Tc)	10V	10mOhm @ 35A, 10V	4V @ 250µA	50 nC @ 10 V	±20V	3050 pF @ 60 V	-	100W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
FDD8647L MOSFET N-CH 40V 14A/42A DPAK onsemi	9,278	RFQ	Datasheet	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	14A (Ta), 42A (Tc)	4.5V, 10V	9mOhm @ 13A, 10V	3V @ 250µA	28 nC @ 10 V	±20V	1640 pF @ 20 V	-	3.1W (Ta), 43W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
FDS6676 SMALL SIGNAL N-CHANNEL MOSFET Fairchild Semiconductor	8,765	RFQ	Datasheet	PowerTrench®	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	14.5A (Ta)	4.5V, 10V	7mOhm @ 14.5A, 10V	3V @ 250µA	63 nC @ 5 V	±16V	5103 pF @ 15 V	-	1W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-SOIC
FDB6670AS MOSFET N-CH 30V 62A TO263AB Fairchild Semiconductor	5,998	RFQ	Datasheet	PowerTrench®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	62A (Ta)	4.5V, 10V	8.5mOhm @ 31A, 10V	3V @ 1mA	39 nC @ 15 V	±20V	1570 pF @ 15 V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF9541 P-CHANNEL POWER MOSFET Harris Corporation	4,731	RFQ	Datasheet	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	80 V	19A (Tc)	10V	200mOhm @ 10A, 10V	4V @ 250µA	90 nC @ 10 V	±20V	1100 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
FQP11N50CF MOSFET N-CH 500V 11A TO220-3 Fairchild Semiconductor	2,116	RFQ	Datasheet	FRFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	11A (Tc)	10V	550mOhm @ 5.5A, 10V	4V @ 250µA	55 nC @ 10 V	±30V	2055 pF @ 25 V	-	195W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
GSFH5010 MOSFET, N-CH, SINGLE, 9A, 500V, Good-Ark Semiconductor	992	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	9A (Tc)	10V	800mOhm @ 4A, 10V	4V @ 250µA	42 nC @ 10 V	±30V	1800 pF @ 25 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
AOW11N60 MOSFET N-CH 600V 11A TO262 Alpha & Omega Semiconductor Inc.	769	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	700mOhm @ 5.5A, 10V	4.5V @ 250µA	37 nC @ 10 V	±30V	1990 pF @ 25 V	-	272W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-262
IPI80N06S2L05AKSA2 MOSFET N-CH 55V 80A TO262-3 Infineon Technologies	500	RFQ	Datasheet	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	80A (Tc)	10V	4.8mOhm @ 80A, 10V	2V @ 250µA	230 nC @ 10 V	±20V	5700 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO262-3-1

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FETs, MOSFETs Electronic Components

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