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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF442119U Harris Corporation electronic component

IRF442119U

7A, 500V, 1.1OHM, N-CHANNEL,

Harris Corporation

1,841
RFQ

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SIHF9620S-GE3 Vishay Siliconix electronic component

SIHF9620S-GE3

MOSFET P-CHANNEL 200V

Vishay Siliconix

960
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
GT750P10M Goford Semiconductor electronic component

GT750P10M

MOSFET P-CH 100V 24A TO-263

Goford Semiconductor

768
RFQ

Datasheet

SGT TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 24A (Tc) 4.5V, 10V 65mOhm @ 20A, 10V 3V @ 250µA 40 nC @ 10 V ±20V 1902 pF @ 50 V - 79W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
IPSA70R360P7SAKMA1 Infineon Technologies electronic component

IPSA70R360P7SAKMA1

MOSFET N-CH 700V 12.5A TO251-3

Infineon Technologies

345
RFQ

Datasheet

CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 700 V 12.5A (Tc) 10V 360mOhm @ 3A, 10V 3.5V @ 150µA 16.4 nC @ 400 V ±16V 517 pF @ 400 V - 59.5W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
IRF4905 UMW electronic component

IRF4905

MOSFET P-CH 55V 74A TO220AB

UMW

305
RFQ

Datasheet

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FQA8N80 Fairchild Semiconductor electronic component

FQA8N80

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

72,211
RFQ

Datasheet

QFET® TO-3P-3, SC-65-3 Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 8.4A (Tc) 10V 1.2Ohm @ 4.2A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 2350 pF @ 25 V - 220W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
NTP5426NG onsemi electronic component

NTP5426NG

MOSFET N-CH 60V 120A TO220AB

onsemi

8,246
RFQ

Datasheet

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 6mOhm @ 60A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5800 pF @ 25 V - 215W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
IPI65R150CFDXKSA1 Infineon Technologies electronic component

IPI65R150CFDXKSA1

MOSFET N-CH 650V 22.4A TO262-3

Infineon Technologies

7,514
RFQ

Datasheet

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
2N6792 Harris Corporation electronic component

2N6792

N-CHANNEL POWER MOSFET

Harris Corporation

10,903
RFQ

Datasheet

- TO-205AF Metal Can Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 1.8Ohm @ 1.25A, 10V 4V @ 1mA - ±20V 600 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-205AF (TO-39)
FQPF17N40T onsemi electronic component

FQPF17N40T

MOSFET N-CH 400V 9.5A TO220F

onsemi

2,833
RFQ

Datasheet

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 9.5A (Tc) 10V 270mOhm @ 4.75A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2300 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FQA12N60 Fairchild Semiconductor electronic component

FQA12N60

MOSFET N-CH 600V 12A TO3P

Fairchild Semiconductor

9,750
RFQ

Datasheet

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 700mOhm @ 6A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
FQI27N25TU onsemi electronic component

FQI27N25TU

MOSFET N-CH 250V 25.5A I2PAK

onsemi

5,625
RFQ

Datasheet

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 250 V 25.5A (Tc) 10V 110mOhm @ 12.75A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 2450 pF @ 25 V - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
RJK4006DPP-G1#T2 Renesas Electronics Corporation electronic component

RJK4006DPP-G1#T2

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

8,032
RFQ

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FDP2670 Fairchild Semiconductor electronic component

FDP2670

MOSFET N-CH 200V 19A TO220-3

Fairchild Semiconductor

4,242
RFQ

Datasheet

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 19A (Ta) 10V 130mOhm @ 10A, 10V 4.5V @ 250µA 38 nC @ 10 V ±20V 1320 pF @ 100 V - 93W (Tc) -65°C ~ 175°C (TJ) - - Through Hole TO-220-3
FQPF22N30 onsemi electronic component

FQPF22N30

MOSFET N-CH 300V 12A TO220F

onsemi

9,625
RFQ

Datasheet

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 300 V 12A (Tc) 10V 160mOhm @ 6A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2200 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
2SK2869-92STR Renesas Electronics Corporation electronic component

2SK2869-92STR

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

3,000
RFQ

Datasheet

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GT105N10K Goford Semiconductor electronic component

GT105N10K

MOSFET, N-CH, 100V,60A,TO-252

Goford Semiconductor

2,593
RFQ

Datasheet

SGT TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 10.5mOhm @ 35A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 1574 pF @ 50 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
FQP4N90 Fairchild Semiconductor electronic component

FQP4N90

MOSFET N-CH 900V 4.2A TO220-3

Fairchild Semiconductor

2,156
RFQ

Datasheet

QFET® TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 900 V 4.2A (Tc) 10V 3.3Ohm @ 2.1A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1100 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRFB3256PBF Infineon Technologies electronic component

IRFB3256PBF

MOSFET N-CH 60V 75A TO220AB

Infineon Technologies

5,250
RFQ

Datasheet

HEXFET® TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 3.4mOhm @ 75A, 10V 4V @ 150µA 195 nC @ 10 V ±20V 6600 pF @ 48 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
2SK2869-91L Renesas Electronics Corporation electronic component

2SK2869-91L

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,271
RFQ

Datasheet

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FETs, MOSFETs Electronic Components

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