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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
RJJ0621DPP-0P#T2 Renesas Electronics Corporation electronic component

RJJ0621DPP-0P#T2

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

18,428
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
SI4436DY-T1-E3 Vishay Siliconix electronic component

SI4436DY-T1-E3

MOSFET N-CH 60V 8A 8SO

Vishay Siliconix

11,843
RFQ

Datasheet

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4.5V, 10V 36mOhm @ 4.6A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 1100 pF @ 30 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
2SK4087LS-1E onsemi electronic component

2SK4087LS-1E

MOSFET N-CH 600V 9.2A TO220F-3FS

onsemi

6,468
RFQ

-

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 610mOhm @ 7A, 10V - 46 nC @ 10 V ±30V 1200 pF @ 30 V - 2W (Ta), 40W (Tc) 150°C (TJ) - - Through Hole TO-220F-3FS
NTMFS4962NFT1G onsemi electronic component

NTMFS4962NFT1G

MOSFET N-CH 30V SO8FL

onsemi

6,000
RFQ

-

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
G050P03S Goford Semiconductor electronic component

G050P03S

P-30V,-25A,RD(MAX)<5.5M@-10V,VTH

Goford Semiconductor

3,994
RFQ

Datasheet

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 25A (Tc) 4.5V, 10V 5.5mOhm @ 10A, 10V 2.5V @ 250µA 111 nC @ 10 V ±20V 7221 pF @ 15 V - 3.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
BUK754R3-75C,127 NXP USA Inc. electronic component

BUK754R3-75C,127

MOSFET N-CH 75V 100A TO220AB

NXP USA Inc.

9,719
RFQ

Datasheet

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 4.3mOhm @ 25A, 10V 4V @ 1mA 142 nC @ 10 V ±20V 11659 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK654R0-75C,127 NXP USA Inc. electronic component

BUK654R0-75C,127

MOSFET N-CH 75V 120A TO220AB

NXP USA Inc.

3,194
RFQ

Datasheet

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 4.5V, 10V 4.2mOhm @ 25A, 10V 2.8V @ 1mA 234 nC @ 10 V ±16V 15450 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
FDA16N50LDTU onsemi electronic component

FDA16N50LDTU

MOSFET N-CH 500V 16.5A TO3PN

onsemi

8,811
RFQ

Datasheet

- TO-3P-3, SC-65-3, Formed Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 16.5A (Tc) 10V 380mOhm @ 8.3A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 205W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN (L-Forming)
SI9435BDY-T1-GE3 Vishay Siliconix electronic component

SI9435BDY-T1-GE3

MOSFET P-CH 30V 4.1A 8SO

Vishay Siliconix

2,371
RFQ

Datasheet

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.1A (Ta) 10V 42mOhm @ 5.7A, 10V 3V @ 250µA 24 nC @ 10 V ±20V - - 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
RM12N650T2 Rectron USA electronic component

RM12N650T2

MOSFET N-CH 650V 11.5A TO220-3

Rectron USA

2,000
RFQ

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11.5A (Tc) 10V 360mOhm @ 7A, 10V 4V @ 250µA - ±30V 870 pF @ 50 V - 101W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
GSFH60R570 Good-Ark Semiconductor electronic component

GSFH60R570

MOSFET, N-CH, SINGLE, 7.00A, 600

Good-Ark Semiconductor

1,996
RFQ

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 570mOhm @ 3.5A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 602 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
AUIRFB4410-IR International Rectifier electronic component

AUIRFB4410-IR

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

1,152
RFQ

Datasheet

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 1.037mA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3-904
2SK3481(0)-Z-E1-AZ Renesas Electronics Corporation electronic component

2SK3481(0)-Z-E1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,000
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
FQP12N60C onsemi electronic component

FQP12N60C

MOSFET N-CH 600V 12A TO220-3

onsemi

8,475
RFQ

Datasheet

QFET® TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 650mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 2290 pF @ 25 V - 225W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
AUIRFS8403TRR International Rectifier electronic component

AUIRFS8403TRR

MOSFET N-CH 40V 123A D2PAK

International Rectifier

800
RFQ

Datasheet

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 123A (Tc) - 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
G130N06M Goford Semiconductor electronic component

G130N06M

N60V, 90A,RD<12M@10V,VTH1.0V~2.4

Goford Semiconductor

780
RFQ

Datasheet

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 12mOhm @ 20A, 10V 2.4V @ 250µA 36.6 nC @ 10 V ±20V 2867 pF @ 30 V - 85W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
IPP06CN10LG Infineon Technologies electronic component

IPP06CN10LG

N-CHANNEL POWER MOSFET

Infineon Technologies

490
RFQ

Datasheet

OptiMOS™ 2 TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 6.2mOhm @ 100A, 10V 2.4V @ 180µA 124 nC @ 10 V ±20V 11900 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
FQA27N25 onsemi electronic component

FQA27N25

MOSFET N-CH 250V 27A TO3PN

onsemi

5,942
RFQ

Datasheet

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 27A (Tc) 10V 110mOhm @ 13.5A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 2450 pF @ 25 V - 210W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN
RJK03R1DPA-00#J5A Renesas Electronics Corporation electronic component

RJK03R1DPA-00#J5A

N-CHANNEL MOSFET

Renesas Electronics Corporation

924,000
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
FDB6035AL Fairchild Semiconductor electronic component

FDB6035AL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

172,284
RFQ

Datasheet

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 48A (Ta) 4.5V, 10V 12mOhm @ 24A, 10V 3V @ 250µA 18 nC @ 5 V ±20V 1250 pF @ 15 V - 52W (Tc) -65°C ~ 175°C (TJ) - - Surface Mount TO-263AB
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FETs, MOSFETs Electronic Components

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