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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
RQ3E130MNTB1 Rohm Semiconductor electronic component

RQ3E130MNTB1

MOSFET N-CH 30V 13A HSMT8

Rohm Semiconductor

1,969
RFQ

-

- 8-PowerVDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 8.1mOhm @ 13A, 10V 2.5V @ 1mA 14 nC @ 10 V ±20V 840 pF @ 15 V - 2W (Ta) 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
2SK3434-Z-AZ Renesas Electronics Corporation electronic component

2SK3434-Z-AZ

MOSFET N-CH

Renesas Electronics Corporation

1,516
RFQ

Datasheet

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GT110N06M Goford Semiconductor electronic component

GT110N06M

MOSFET N-CH 60V 45A 52W TO-263

Goford Semiconductor

784
RFQ

Datasheet

SGT TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 4.5V, 10V 9mOhm @ 14A, 10V 2.4V @ 250µA 31 nC @ 10 V ±20V 1200 pF @ 30 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
IRF6616TRPBF International Rectifier electronic component

IRF6616TRPBF

IRF6616 - MOSFET, 40V, 106A, 5.0

International Rectifier

774
RFQ

Datasheet

HEXFET® DirectFET™ Isometric MX Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 106A (Tc) 4.5V, 10V 5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3765 pF @ 20 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MX
G230P06M Goford Semiconductor electronic component

G230P06M

MOSFET P-CH 60V 48A 105W TO-263

Goford Semiconductor

745
RFQ

Datasheet

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 20mOhm @ 10A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 4505 pF @ 30 V - 105W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
RJK0380DPA-00#J53 Renesas Electronics Corporation electronic component

RJK0380DPA-00#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics Corporation

69,000
RFQ

Datasheet

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2SJ634-E onsemi electronic component

2SJ634-E

MOSFET P-CH 60V 8A

onsemi

24,500
RFQ

-

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HAT2085T-EL-E Renesas Electronics Corporation electronic component

HAT2085T-EL-E

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

21,000
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
FDP8860 Fairchild Semiconductor electronic component

FDP8860

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor

15,367
RFQ

Datasheet

PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.5mOhm @ 80A, 10V 2.5V @ 250µA 222 nC @ 10 V ±20V 12240 pF @ 15 V - 254W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
RJK0380DPA-02#J0 Renesas Electronics Corporation electronic component

RJK0380DPA-02#J0

POWER TRANSISTOR, MOSFET

Renesas Electronics Corporation

15,000
RFQ

Datasheet

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FDMS86101E onsemi electronic component

FDMS86101E

MOSFET N-CH 100V 12.4A/60A 8PQFN

onsemi

5,037
RFQ

-

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 12.4A (Ta), 60A (Tc) 6V, 10V 8mOhm @ 13A, 10V 4V @ 250µA 55 nC @ 10 V ±20V 3000 pF @ 50 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
IRL2505PBF Infineon Technologies electronic component

IRL2505PBF

MOSFET N-CH 55V 104A TO220AB

Infineon Technologies

6,149
RFQ

Datasheet

HEXFET® TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
GSFD8005 Good-Ark Semiconductor electronic component

GSFD8005

MOSFET, N-CH, SINGLE, 5.5A, 800V

Good-Ark Semiconductor

4,980
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 2.7Ohm @ 2.5A, 10V 4V @ 250µA 15.16 nC @ 10 V ±30V 678 pF @ 25 V - 132W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
AUIRF1010EZ International Rectifier electronic component

AUIRF1010EZ

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

3,340
RFQ

Datasheet

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) - 8.5mOhm @ 51A, 10V 4V @ 250µA 86 nC @ 10 V - 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
HUF76437P3 Fairchild Semiconductor electronic component

HUF76437P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,200
RFQ

Datasheet

UltraFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V 3V @ 250µA 71 nC @ 10 V ±16V 2230 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IPI100N06S3L-03 Infineon Technologies electronic component

IPI100N06S3L-03

MOSFET N-CH 55V 100A TO262-3

Infineon Technologies

5,634
RFQ

Datasheet

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 5V, 10V 3mOhm @ 80A, 10V 2.2V @ 230µA 550 nC @ 10 V ±16V 26240 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
HUFA75339P3 Fairchild Semiconductor electronic component

HUFA75339P3

MOSFET N-CH 55V 75A TO220-3

Fairchild Semiconductor

2,440
RFQ

Datasheet

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 12mOhm @ 75A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
BUK9E04-30B,127 NXP USA Inc. electronic component

BUK9E04-30B,127

MOSFET N-CH 30V 75A I2PAK

NXP USA Inc.

7,725
RFQ

-

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 3mOhm @ 25A, 10V 2V @ 1mA 56 nC @ 5 V ±15V 6526 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
RJK0380DPA-WS#J53 Renesas Electronics Corporation electronic component

RJK0380DPA-WS#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics Corporation

320
RFQ

Datasheet

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NVF3055-100T1G onsemi electronic component

NVF3055-100T1G

MOSFET N-CH 60V 3A SOT223

onsemi

3,724
RFQ

Datasheet

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 10V 110mOhm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 455 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-223 (TO-261)
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FETs, MOSFETs Electronic Components

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